Development of high-performance Schottky diode detector in the submillimeter wave region

亚毫米波区高性能肖特基二极管检波器的研制

基本信息

批准号：
06452236
负责人：
NOZOKIDO Tatsuo
金额：
$ 4.35万
依托单位：
The Institute of Physical and Chemical Research (RIKEN)
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1994
资助国家：
日本
起止时间：
1994 至 1995
项目状态：
已结题

项目摘要

The aim of the research is to realize a high-performance Pt/GaAs Schottky Diode (SD) detector operated in the submillimeter wave (SMMW) region with characteristics of high-sensitivity and good mechanical stability. The detector consists of reverse honeycomb SD,whisker antenna and RF microstrip filter which are fabricated using photolithographic technique. Concerning a fabrication process of reverse honeycomb SD,we have successfully developed an ECR plasma anisotropic etching technique to make a dot-matrix pattern (diameter : 0.17mum, pitch : 0.5mum) on SiO_2 with thickness of 4000A without damaging the underlying GaAs epi-layr. This is essential to obtain low-noise SD and the technique would also be applicable to fabrication processes for other semiconductor devices. We also made the whisker antenna and RF microstrip filter and have verified their dimensions as designed. We plan to complete the reverse honeycomb SD,make the detector mount, assemble these components and then measure the detector characteristics.For the testing and characterization of the detector we have succeeded in developing an optically pumped SMMW laser with highly stable output power and a diplexer with propagation loss of 0.2dB.In the course of the development we have discovered a new lasing line (wavelength : 746.4mum) when using CH_2F_2 gas as a lasing media. We further tried to modulate the SMMW radiation by laser-produced free carriers in semiconductors. Modulation of 214.6mum radiation was carried out by irradiating high-resistivity silicon or GaAs wafers with optical pulses from a Nd : YAG laser. We have achieved SMMW switching with rise time of 6nsec and generation of SMMW short pulses with duration of 10nsec. This optical switching technique is very useful for measuring the speed of SMMW detectors and could be applied to fields like molecular spectroscopy and solid-state physics.

该研究的目的是实现亚毫米波（SMMW）区域运行的高性能Pt/GaAs肖特基二极管（SD）探测器，具有高灵敏度和良好机械稳定性的特点。该探测器由采用光刻技术制作的反向蜂窝SD、晶须天线和射频微带滤波器组成。针对反向蜂窝SD的制作工艺，我们成功开发了ECR等离子各向异性蚀刻技术，在不损坏底层GaAs外延层的情况下，在厚度为4000A的SiO_2上制作点阵图案（直径：0.17mum，间距：0.5mum）。层。这对于获得低噪声 SD 至关重要，并且该技术也适用于其他半导体器件的制造工艺。我们还制作了须状天线和射频微带滤波器，并验证了它们的设计尺寸。我们计划完成反向蜂窝SD，制作探测器安装座，组装这些部件，然后测量探测器特性。为了探测器的测试和表征，我们成功开发了具有高度稳定输出功率的光泵SMMW激光器和双工器传播损耗为0.2dB。在开发过程中，我们发现了使用CH_2F_2气体作为激光介质时的新激光线（波长：746.4mum）。我们进一步尝试通过半导体中激光产生的自由载流子来调制 SMMW 辐射。 214.6mum 辐射的调制是通过用 Nd:YAG 激光器的光脉冲照射高电阻率硅或 GaAs 晶片来实现的。我们已经实现了上升时间为 6 纳秒的 SMMW 开关以及持续时间为 10 纳秒的 SMMW 短脉冲的生成。这种光学开关技术对于测量 SMMW 探测器的速度非常有用，并且可以应用于分子光谱和固态物理等领域。