CVD Growth of Oxide Ferroelectric Thin Films and Control of Their Properties Using Photo Energy

氧化物铁电薄膜的 CVD 生长及其利用光能控制其性能

• 批准号: 05650302
• 负责人: SHIMIZU Masaru
• 金额: $ 1.41万
• 依托单位: KYOTO UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1994
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-05650302/
• 关键词: Photo-MOCVD; ferroelectric film; PZT thin film; film composition; perovskite; NO_2; O_3; characteristic control; 光励起MOCVD法; メモリ特性; リ-ク電流; オゾン; 疲労特性; 光MOCVD; リーク特性; バッファ層; 二段階成長; トリエチルn-ペントキシ鉛

Ferroelectric Pb (Zr, Ti) O_3 (PZT) thin films were successfully grown by photoenhanced metalorganic chemical vapor deposition (photo-MOCVD) . Significant effects of photoirradiation on the growth behavior were observed. The observed effects included an increase in the film composition ratio of Zr/ (Zr+Ti) and a change in the electrical properties. These experimental results means that precise control of film composition and electrical properties could be achieved by photoirradiation. The growth temperature of perovskite Pb (Zr, Ti) O_3 films grown using NO_2 as on oxidizing gas was lower than when O_2 was used as an oxidizing gas.In the growth of PZT thin films by photo-MOCVD,an improvement in the breakdown voltage by the use of O_3 as an oxidizing gas and photoirradiation was also observed.From our experimental results, it was found that the growth behavior and electrical characteristics of PZT films could be controlled by photoirradiation.

采用光增强金属有机化学气相沉积(photo-MOCVD)技术成功生长了铁电Pb(Zr,Ti)O_3(PZT)薄膜。观察到光照射对生长行为的显着影响。观察到的效果包括Zr/(Zr+Ti)薄膜成分比的增加和电性能的变化。这些实验结果意味着可以通过光照射实现薄膜成分和电性能的精确控制。以NO_2为氧化气体生长的钙钛矿Pb(Zr,Ti)O_3薄膜的生长温度比以O_2为氧化气体时的生长温度低。采用光MOCVD法生长PZT薄膜时,击穿电压有所提高。通过使用O_3作为氧化气体和光照射也观察到了PZT薄膜的生长行为和电学特性。从我们的实验结果来看，PZT薄膜的生长行为和电学特性可以通过光照射。

项目成果

Masaru Shimizu: "Control of Pb (Zr, Ti) O_3 Thin Film Characteristics Using Metalorganic Chemical Vapor Deposition" J.Korean Phys.Soc.Vol.27. S49-S53 (1994)

Masaru Shimizu：“利用金属有机化学气相沉积控制 Pb (Zr, Ti) O_3 薄膜特性”J.Korean Phys.Soc.Vol.27。

Takuma Katayama: "Effects of Growth Kate on Electrical Properfies of Pb(Zr,Ti)O_3 Thin Films Grown by Chemical Vapor Deposition" Jpn.J.Appl.Phys.32. 5062-5066 (1993)

Takuma Katayama：“生长凯特对化学气相沉积生长的 Pb(Zr,Ti)O_3 薄膜电性能的影响”Jpn.J.Appl.Phys.32。

Masaru Shimizu: "Control of Orientation of Pb (Zr, Ti) O_3 Thin Films Using PbTiO_3 Buffer Layr" Jpn.J.Appl.Phys.Vol.33. 5167-5171 (1994)

Masaru Shimizu：“使用 PbTiO_3 缓冲层控制 Pb (Zr, Ti) O_3 薄膜的取向”Jpn.J.Appl.Phys.Vol.33。

Masaru Shimizu: "Photoenhanced MOCVD of PbZr_xTi_<1-x>O_3 Thin Films" Appl.Surf.Sci.Vol.79/80. 293-298 (1994)

Masaru Shimizu：“PbZr_xTi_<1-x>O_3 薄膜的光增强 MOCVD”Appl.Surf.Sci.Vol.79/80。

Masaru Shimizu: "Effects of O_3 on Growth and Electrical Properties of Pb (Zr, Ti) O_3 Thin Filmsby Photoenhanced Metalorganic Chemical Vapor Deposition" Jpn.J.Appl.Phys.Vol.33. 5135-5138 (1994)

Masaru Shimizu：“O_3 对光增强金属有机化学气相沉积 Pb (Zr, Ti) O_3 薄膜的生长和电性能的影响”Jpn.J.Appl.Phys.Vol.33。