Preparation of Functional Ceramic Thin Films by Photo-MOCVD and their Applications to Optical Functional Devices

光MOCVD法制备功能陶瓷薄膜及其在光学功能器件中的应用

基本信息

批准号：
01460141
负责人：
SHIOSAKI Tadashi
金额：
$ 4.1万
依托单位：
Kyoto University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1989
资助国家：
日本
起止时间：
1989 至 1991
项目状态：
已结题

项目摘要

Functional ceramic thin films, such as zinc oxide (ZnO), lead titanate (PbTiO_3) and lead zirconate titanate (Pb (Zr, Ti) O_3 ; PZT) have been obtained by photo-MOCVD. Using diethyl zinc, O_2, and NO_2, c-Axis oriented ZnO thm films were grown on glass substrates at 150ﾟC. ZnO epitaxialisms were also grown on sapphire substrates at higher than 450ﾟC. The observed effects of UV light irradiation on the growth were an increase in growth rate, an improvement in crystallinity and a change in electrical properties. In photo-MOCVD of ZnO, surface photochemical reactions play a more important role than gas phase photochemical Seactions.(111) oriented PbTiO_3 thin films with a perovskite phase were obtained at 600ﾟC by photoMOCVD using tetraethyl lead, titanium, isopropoxide and O_2. When NO_2 was used as an oxidizing 969, polycrystalline films with a perovskite phase were obtained a (530ﾟC. The crystalline quality and Pb/Ti compositional ratio were influenced by photo irradiation. It was found tfiat photo irradiation helped to reduce the growth temperature. Electrical properties of the films obtained were also investigated. The PbTiO_3 films showed good step coverage characteristics.Pb (Zr, Ti) O_3[PZT]thin films were also prepared by photo-MOCVD. By changing the gas flow rates of Zr 8Rd Ti, preferentially (111) oriented PZT films with a tetragonal phase were grown at 600ﾟC and films with a rhombohedral phase were grown at 650ﾟC. The observed effects of photo irradiation on the growth of PZT were an increase in growth rate and a change in film composition. PZT thin films with a thickness of 3000-6000* showed ferroelectric P-E hysteresis curves and switching characteristics.

利用二乙基锌、O_2、NO_2等材料，制备了氧化锌(ZnO)、钛酸铅(PbTiO_3)、锆钛酸铅(Pb(Zr,Ti)O_3；PZT)等功能陶瓷薄膜。 c 轴取向的 ZnO thm 薄膜在 150°C 的玻璃基板上生长。外延生长也在高于 450°C 的蓝宝石衬底上进行，观察到的紫外光照射对生长的影响包括生长速率的提高、结晶度的提高以及 ZnO 表面电学性能的变化。光化学反应比气相光化学部分发挥更重要的作用。(111) 获得了具有钙钛矿相的取向 PbTiO_3 薄膜。使用四乙基铅、钛、异丙醇和O_2，通过光MOCVD在600℃下使用NO_2作为氧化969，获得了具有钙钛矿相的多晶薄膜(530℃)。晶体质量和Pb/Ti组成比受光的影响。发现光照射有助于降低生长温度。并研究了所得薄膜的性能。PbTiO_3薄膜表现出良好的阶梯覆盖特性。通过改变Zr 8Rd Ti的气体流量,还制备了Pb(Zr,Ti)O_3[PZT]薄膜。具有四方相的（111）取向 PZT 薄膜在 600°C 下生长，具有菱面体相的薄膜在 600°C 下生长。 650°C 观察到的光照射对 PZT 生长的影响是生长速率的增加和厚度为 3000-6000* 的 PZT 薄膜表现出铁电 P-E 磁滞曲线和开关特性。