Development of scanning tunneling microscope for materials growth front observations on an atomic scale

开发用于原子尺度材料生长前沿观察的扫描隧道显微镜

基本信息

批准号：
01850001
负责人：
SHIRAKI Yasuhiro
金额：
$ 7.17万
依托单位：
The University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research
财政年份：
1989
资助国家：
日本
起止时间：
1989 至 1991
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-01850001/
关键词：
epitaxial growth surface structure scanning tunneling microscopy (STM)kinetic phase Ge islanding mechanism of interfacial mixing Si Ge heterostructure atomic details on solid surfaces エピタキシャル成長 5×5構造選択的吸着超高真空モリブデンブル-ブロンズ Si

项目摘要

A new class of scanning tunneling microscopy (STM) was developed, which has a potential of probing atomic details on solid surfaces during the epitaxial growth. Two types of STM were constructed. The first is truly compact and the coarse positioning system consists of a novel inertia "walker" driven by shear mode piezoelectric elements. The second system was even rigid but truly compact and the coarse positioning was basically mechanically driven. Mechanical stability and thermal drift were appreciably improved and the vibronic immunity was further improved by introducing a spring suspension along with eddy current dampers. Both systems were shown to be readily fitted onto a conventional material growth facility.Initial check of the system was satisfactory with respect to the ability of the new STM to probe the atomic detail to a subnanometer resolution. Atomic structures of graphite, Au deposited on mica, and cleaved K_<0.3>MoO_3 were observed. Subsequently, the STM was introduced int … More o UHV environment with a newly developed sample transfer system and materials deposition facilities. Unexpectedly, It was found that the sample quench mechanism was not necessary. Rather a mere contact with the sample transfer fork was sufficient to quench a kinetic phase of the smample.Finally, we investigated the initial stage of epitaxial growth of Ge on Si (111) since Si/Ge/Si growth are of primary importance while little is studied by STM. Major objective is to find out the mechanism of interfacial mixing in the context of surface structure change upon deposition which is pronounced in Si/Ge heterostructural systems when grown by deposition. We found that the solid Ge islanding on terrace regions dictates the local topography leading a rugged Si/Ge interface. We also found that a kinetic phase of 5x5 reconstruction as observed in electron diffraction is scattered and manifest itself on higher terraces of Ge islands.It is expected that the present results would be extended to be Put into practice in the near future. Less

开发了一种新型扫描隧道显微镜 (STM)，它具有在外延生长过程中探测固体表面原子细节的潜力。第一种是真正紧凑的，其粗定位系统由一种新颖的结构组成。由剪切模式压电元件驱动的惯性“步行者”系统甚至是刚性的，但真正紧凑，粗定位基本上是机械驱动的，机械稳定性和热漂移得到了明显改善，并且振动抗扰度得到了改善。通过引入弹簧悬架和涡流阻尼器，这两个系统都被证明可以很容易地安装到传统的材料生长设备上。系统的初步检查对于新 STM 探测原子细节的能力是令人满意的。观察了石墨、云母上沉积的 Au 和裂解的 K_<0.3>MoO_3 的原子结构。随后，将 STM 引入到 UHV 环境中，并采用新开发的样品传输装置。出乎意料的是，我们发现样品淬火机制并不是必需的，仅与样品传送叉接触就足以淬火样品的动力学阶段。最后，我们研究了外延生长的初始阶段。由于 Si/Ge/Si 生长至关重要，而 STM 的研究很少，主要目标是找出沉积时表面结构变化背景下的界面混合机制。当通过沉积生长时，这在 Si/Ge 异质结构系统中很明显，我们发现平台区域上的固体 Ge 孤岛决定了导致崎岖 Si/Ge 界面的局部地形，我们还发现了电子中观察到的 5x5 重建的动力学阶段。衍射现象在葛岛较高的台地上表现得比较分散，预计在不久的将来将得到推广应用。