SiGeSn-Nanostructures for Integrated Quantum Well Infrared Photodetectors

用于集成量子阱红外光电探测器的 SiGeSn 纳米结构

• 批准号: 390910964
• 负责人: Professor Dr. Kurt Busch
• 金额: --
• 依托单位: Department Elektrotechnik-Elektronik-Informationstechnik
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2018
• 资助国家: 德国
• 起止时间: 2017-12-31 至 2020-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/390910964?language=en
• 关键词: SiGeSn; Nanostructures; Integrated; Quantum; Well

The project goal is the fabrication and characterization of CMOS-compatible quantum-well infrared photodetectors based on n-type SiGeSn heterostructures operating in the mid-infrared and far-infrared wavelength ranges with possible applications in absorption-based gas sensing and imaging. Previous work on Group-IV based quantum well infrared photodetectors focused on utilizing SiGe multi-quantum well structures, however, the photoresponse cannot compete with commercial devices based on III-V heterostructure quantum wells. By exploiting the larger physical parameter tunability of the ternary alloy SiGeSn we intend to extend the potential of Group-IV-based detectors to demonstrate quantum-well infrared photodetectors with low manufacturing costs that can be interfaced directly with CMOS signal conditioning circuits for the development of ultra-compact integrated sensing solutions. To this end, we plan to experimentally investigate relevant material properties such as bandgap and band offsets of the ternary alloys, which, to date, are not sufficiently understood. Device realization will then be based on theoretical modelling and experimental data from material growth to the device fabrication process.

项目目标是基于N型Sigesn异质结构在中型和远红外波长范围内运行的N型Sigesn异质结构的制造和表征，具有基于吸收的气体传感和成像。先前关于基于组IV的量子井红外光电探测器的工作重点是利用SIGE多量子井结构，但是，光响应不能与基于IIII-V异质结构量子井的商业设备竞争。通过利用三元合金SIGESN的较大物理参数可调节性，我们打算扩展基于IV的检测器的潜力，以证明具有低生产成本的量子 - 挡板红外光电探测器，这些光电成本较低，可以直接与CMOS信号调节电路交织以开发用于开发CMOS信号。超紧凑的集成感测溶液。为此，我们计划实验研究相关的材料特性，例如带隙和三元合金的带偏移，迄今为止，这些特性尚不充分了解。然后，设备实现将基于从材料生长到设备制造过程的理论建模和实验数据。

项目成果

Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells

• DOI: 10.1103/physrevmaterials.4.024601
• 发表时间: 2020-02
• 期刊: Physical Review Materials
• 影响因子: 3.4
• 作者: I. Fischer;C. Clausen;D. Schwarz;P. Zaumseil;G. Capellini;M. Virgilio;Maria Cecilia da Silva Figueira;S. Birner;S. Koelling;P. Koenraad;Michael R. S. Huang;C. Koch;Torsten Wendav;K. Busch;J. Schulze

Electrical Characterization of Fabricated pin Diodes made from SixGe1-x-ySny with an Embedded Ge1-xSnx Quantum Well

由具有嵌入式 Ge1-xSnx 量子阱的 SixGe1-x-ySny 制成的装配式 pin 二极管的电气特性

• DOI: 10.23919/mipro.2019.8757211
• 发表时间: 2019
• 期刊: 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)
• 作者: P. Povolni;D. Schwarz;C.J. Clausen;Y. Elogail;H.S. Funk;M. Oehme;D. Weißhaupt;J. Schulze
• 通讯作者: J. Schulze

Alloy Stability of Ge1−xSnx with Sn Concentrations up to 17% Utilizing Low-Temperature Molecular Beam Epitaxy

合金%20稳定性%20of%20Ge1âxSnx%20with%20Sn%20浓度%20up%20至%2017%%20利用%20低温%20分子%20光束%20外延

• DOI: 10.1007/s11664-020-08188-6
• 发表时间: 2020
• 期刊: Journal of Electronic Materials
• 影响因子: 2.1
• 作者: D. Schwarz;H. S. Funk;M. Oehme;J. Schulze
• 通讯作者: J. Schulze

SiGeSn material for integrated optical devices

用于集成光学器件的SiGeSn材料

• DOI: 10.1117/12.2318011
• 发表时间: 2018
• 作者: M. Oehme;D. Schwarz;J. Schulze;C.J. Clausen;I.A. Fischer
• 通讯作者: I.A. Fischer

Electrical characterization of n-doped SiGeSn diodes with high Sn content

高 Sn 含量 n 掺杂 SiGeSn 二极管的电学特性

• DOI: 10.1088/1361-6641/aae3ab
• 发表时间: 2018
• 期刊: Semiconductor Science and Technology
• 影响因子: 1.9
• 作者: C.J. Clausen;I.A. Fischer;D. Weisshaupt;F. Baerwolf;B. Tillack;G. Colston;M. Myronov;M. Oehme;J. Schulze
• 通讯作者: J. Schulze