Investigations of GaN-based vertical field effect transistors for applications in high-power electronics

GaN基垂直场效应晶体管在高功率电子器件中的应用研究

• 批准号: 339032420
• 负责人: Professor Dr. Oliver Ambacher
• 金额: --
• 依托单位: Institut für Nachhaltige Technische Systeme (INATECH)
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2017
• 资助国家: 德国
• 起止时间: 2016-12-31 至 2020-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/339032420?language=en
• 关键词: Investigations; GaN; based; vertical; field

In this project, normally-off current aperture vertical field effect transistor concepts (CAVET) will be investigated for the analysis, epitaxy, processing, and characterization of electronic power devices based on group III-N semiconductors. The aim of this project is to investigate vertical transistors in order to enhance the key device parameters on-state resistance and breakdown voltage on a higher level than in Si devices and lateral GaN-based devices. In contrast to previous work this shall be accomplished using epitaxial approaches for the definition of the aperture. For the required thick defect-poor GaN drift layer, hydride vapor phase epitaxial (HVPE) growth will be performed and analyzed based on our long-standing experience of this method. On these advancedlow defect density substrates, the actual device structures will be grown by metalorganic vapor phase epitaxy (MOVPE) using selective area epitaxy for the required current aperture layers in order to minimize any defect generation during lateral structurization. On the processing side, vertical structuring and complex process flows need to be analyzed and performed in order to explore the full potential of the vertical transistor in terms of current flow and breakdown stability. Novel normally-off concepts in combination with the CAVET aperture shall be investigated. Full device simulations atIAF will guide and support epitaxial growth and device processing. Particular focus will be put on the required doping profiles. Structural and electrical characterization will be performed to understand the prospects and limitations of this new class of devices for high-voltage operation. The work program is defined and executed jointly by groups at the University of Ulm, University of Freiburg and Fraunhofer IAF. The background of the groups combines the required in-depth expertise for this project in terms of semiconductor epitaxy, processing, modeling and characterization.

在该项目中，将研究常关电流孔径垂直场效应晶体管概念 (CAVET)，以用于基于 III-N 族半导体的电子功率器件的分析、外延、处理和表征。该项目的目的是研究垂直晶体管，以将关键器件参数（通态电阻和击穿电压）提高到比硅器件和横向氮化镓器件更高的水平。与之前的工作相比，这应使用外延方法来定义孔径来完成。对于所需的厚的无缺陷GaN漂移层，将根据我们对该方法的长期经验进行氢化物气相外延（HVPE）生长并进行分析。在这些先进的低缺陷密度衬底上，实际的器件结构将通过金属有机气相外延（MOVPE）生长，使用选择性区域外延来获得所需的电流孔径层，以便最大限度地减少横向结构化期间产生的任何缺陷。在处理方面，需要分析和执行垂直结构和复杂的工艺流程，以便探索垂直晶体管在电流和击穿稳定性方面的全部潜力。应研究与 CAVET 孔径相结合的新颖常关概念。 IAF 的完整器件模拟将指导和支持外延生长和器件加工。将特别关注所需的掺杂分布。将进行结构和电气特性分析，以了解此类新型高压操作设备的前景和局限性。该工作计划由乌尔姆大学、弗莱堡大学和弗劳恩霍夫 IAF 的小组共同制定和执行。这些小组的背景结合了该项目在半导体外延、加工、建模和表征方面所需的深入专业知识。

项目成果

Metal organic chemical vapour deposition regrown large area GaN‐on‐GaN current aperture vertical electron transistors with high current capability

金属有机化学气相沉积再生长大面积 GaNâonâGaN 电流孔径垂直电子晶体管，具有高电流能力

• DOI: 10.1049/ell2.12068
• 发表时间: 2021
• 期刊: Electronics Letters
• 影响因子: 1.1
• 作者: P. Döring;R. Driad;R. Reiner;P. Waltereit;M. Mikulla;O. Ambacher
• 通讯作者: O. Ambacher

Growth and Fabrication of Quasivertical Current Aperture Vertical Electron Transistor Structures

准垂直电流孔径垂直电子晶体管结构的生长和制造

• DOI: 10.1002/pssa.202000379
• 发表时间: 2020
• 期刊: physica status solidi (a)
• 作者: P. Döring;R. Driad;S. Leone;S. Müller;P. Waltereit;L. Kirste;V. Polyakov;M. Mikulla;O. Ambacher
• 通讯作者: O. Ambacher