Chromium Chalcogenide based Thermoelectrics

铬硫族化物基热电材料

基本信息

批准号：
338007693
负责人：
Professor Dr. Wolfgang Bensch
金额：
--
依托单位：
Institut für Mikrosystemtechnik (IMTEK)
依托单位国家：
德国
项目类别：
Research Grants
财政年份：
2017
资助国家：
德国
起止时间：
2016-12-31 至 2020-12-31
项目状态：
已结题

来源：
https://gepris.dfg.de/gepris/projekt/338007693?language=en
关键词：
Chromium Chalcogenide based Thermoelectrics

项目摘要

For many commercial processes like combustion engines losses due to waste heat are inevitable. Thermoelectric materials mounted in a thermoelectric generator can partially recover the otherwise lost energy by converting the existent temperature gradient to an electrical voltage. However, current efficient thermoelectric materials consist of rare and hazardous elements like Lead, Antimony, Tellurium, etc.The project Chrome chalcogenide based Thermoelectrics investigates binary (CrxCrS2) and ternary (MCrS2 (M = Cu, Ag)) chrome chalcogenides as up until now unexplored thermoelectric materials. Besides the relative ease of accessibility of consisting elements, chrome chalcogenides are known semiconductors which can be highly doped. Hence, substitution of anions and cations is possible for a broad compositional range without alterations to the general structure. The influence of substitution on real structure and thermoelectric properties, especially Seebeck coefficient as well as electrical and thermal conductivity will be thoroughly investigated during this project.The electrical conductivity can be modified by changing the number of charge carriers and the width of the band gap. On the other hand, the Seebeck coefficient conceivably increases due to additional spin entropy. A decrease of the thermal conductivity can be achieved by substitution and topotactic reactions, introducing specific defect structures (point defects, planar defects and nanoprecipitates). To rationalize the chemical, micro- and nanostructural properties of these new thermoelectric materials challenging and partially novel to-be-developed Transmission Electron Microscopy (TEM) and X-Ray Diffraction (XRD) methods have to be used in order to investigate correlations between synthesis, composition, (micro)structure and thermoelectric properties. The combination of both methods allows a complete and quantitative model for complex materials on all relevant length scales. For the thermoelectric characterization, a new type of measurement set-up will be developed which enables quick and reliable determination of the characteristic variables for thermoelectric materials of numerous samples. Particularly promising materials will be investigated in detail by in and ex situ TEM and XRD heating experiments to investigate structural changes upon cyclic heating; these will be correlated to alterations of thermoelectric properties.Ultimately, this research project also addresses relevant application-technological topics like the preparation of low ohmic contacts for integration in chrome chalcogenide based thermoelectric generators. Therefore, appealing questions arise for basic research, upon answering; a significant benefit for the thermoelectric community can be expected, like long term stability of thermoelectric materials and the specific failure mechanism.

对于许多商业过程，例如由于废热而导致的燃烧发动机损失是不可避免的。安装在热电发生器中的热电材料可以通过将存在的温度梯度转换为电压来部分恢复原本损失的能量。然而，当前有效的热电材料由稀有和危险元素（如铅，锑，柜员等）组成。基于Chalcogenide的Project Chalcogenide Project Hyoelectrics研究了二进制（CRXCRS2）（CRXCRS2）和三元（MCRS2（MCRS2（M = CU，AG，AG）），直到现在到现在为止未开发的热电材料。除了相对易于可访问性的元素可访问性外，镀铬辣椒剂是已知的半导体，可以高度掺杂。因此，可以取代阴离子和阳离子，用于广泛的组成范围，而不会改变一般结构。替代对实际结构和热电特性的影响，尤其是Seebeck系数以及在此项目期间的电导率和导热率的影响。可以通过改变电荷载体数量和带隙的宽度来改变电导率。另一方面，由于额外的自旋熵，塞贝克系数可以增加。可以通过取代和拓扑反应来实现热导率的降低，引入特定的缺陷结构（点缺陷，平面缺陷和纳米沉淀）。为了合理化这些新的热电材料的化学，微观和纳米结构特性，具有挑战性和部分新颖的待机发达的传输电子显微镜（TEM）和X射线衍射（XRD）方法，以研究合成之间的相关性，组成，（微）结构和热电特性。两种方法的组合都允许在所有相关长度尺度上进行复杂材料的完整和定量模型。对于热电表征，将开发一种新型的测量设置，可快速可靠地确定许多样品的热电材料的特征变量。特别有希望的材料将通过在和XRD加热实验中进行详细研究，以研究循环加热时的结构变化；这些研究项目还解决了相关的应用技术主题，例如制备低欧姆接触以集成基于Chalcogenide的热电学生成器。因此，回答后，基础研究提出了吸引人的问题；可以期待热电社区的重要好处，例如热电材料的长期稳定性和特定的故障机制。

项目成果

期刊论文数量（4）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

High‐Pressure Sintering of Rhombohedral Cr2S3 Using Titanium–Zirconium–Molybdenum Tools

DOI：
10.1002/adem.201900430
发表时间：
2019-09
期刊：
Advanced Engineering Materials
影响因子：
3.6
作者：
D. Groeneveld;H. Groß;Anna‐Lena Hansen;T. Dankwort;Julian Hansen;J. Wöllenstein;W. Bensch;L. Kienle;J. König
通讯作者：
D. Groeneveld;H. Groß;Anna‐Lena Hansen;T. Dankwort;Julian Hansen;J. Wöllenstein;W. Bensch;L. Kienle;J. König

Does Low‐Level Substitution Aid in Improving Thermoelectric Properties? A Case Study of M0.1Ni0.9Cr2S4 (M = Mn, In)

低水平取代有助于提高热电性能吗？