DFG-RSF: Impact of topology on electronic properties of ordered materials

DFG-RSF：拓扑对有序材料电子性能的影响

基本信息

批准号：
310371528
负责人：
Professor Dr. Jeroen van den Brink
金额：
--
依托单位：
Landau Institute for Theoretical Physics
依托单位国家：
德国
项目类别：
Research Grants
财政年份：
2016
资助国家：
德国
起止时间：
2015-12-31 至 2018-12-31
项目状态：
已结题

来源：
https://gepris.dfg.de/gepris/projekt/310371528?language=en
关键词：
DFG RSF Impact topology electronic

项目摘要

The problem of novel material engineering is highly topical due to its potential impact on environment, natural resources saving, progress in telecommunications, and life quality, in total. In spite of almost 30 years history of cuprate HTS, the phase diagram and properties of the layered HTS materials are lacking of complete understanding, particularly in the vicinity of the quantum critical point. There are still debated the effects of the spin and orbital fluctuations, spin and charge ordering, many body effects (in the vicinity of the Lifshitz topological transition), and topology of the surface states (flat bands). Clearly, the role of potentially favorable factors for HTS must be clarified for the purposeful searching and engineering novel HTS materials. The current project aims at theoretical development and experimental implementation of the superconductors engineering based on layered materials (both pnictide, and dichalcogenide-based), studying their properties in the vicinity of QCP, clarifying the role of the interplay of magnetic ions ordering, charge ordering and SC pairing. The main idea of the project consists in studying and use of the flat band materials, both topologically trivial, and non-trivial. The former are to result in the enhanced contribution of the many-body condensation energy to the SC gap due to the proximity to the Lifshitz transition, the latter due to the non-trivial topology (Weyl semimetals). The flat band conditions in the topologically non-trivial materials is expected to be tuned using the band engineering methods (hydrostatic pressure, chemical and electric doping). The experimental and theoretical studies will be carried out in several related directions: (A) refining the theory and collecting new experimental data on the properties of Fe-HTS in the vicinity of the topological Lifshitz transition and in the vicinity of the anticipated QCP. (B) Studies of the new superconducting transition metal dichalcogenides, particularly, with topologically nontrivial spectrum. (C) Design, syntheses and studies of the true 3D topological insulator materials as a platform for studying and utilizing topologically protected surface states. The materials and structures will be synthesized by the solid state synthesis technique, growth from melt, by physical vapor transport, and also by the pulsed laser deposition techniques (PLD/MBE). The project includes development of the novel techniques for measurements and material diagnostics, complemental to the ordinary transport and optical methods. The research will be performed by the team consisting of experts in the complementary fields theoretical physics, and experimental chemistry and physicists.

新型材料工程的问题高度主题，因为它对环境的潜在影响，节省自然资源，电信进展和生活质量总体。尽管有将近30年的铜HT历史，但分层HTS材料的相图和特性缺乏完全理解，尤其是在量子临界点附近。旋转和轨道波动，自旋和电荷顺序，许多身体效应（在Lifshitz拓扑过渡的附近）以及表面状态（平面频段）的影响仍然存在争议。显然，对于有目的的搜索和工程新颖的HTS材料，必须阐明潜在有利因素的作用。当前的项目旨在基于分层材料（pnictide和基于二甲基化的二北元化）的理论发展和实验实施，研究了它们在QCP附近的特性，阐明了磁离子订购的相互作用的作用和SC配对。该项目的主要思想在于研究和使用平面材料，无论是拓扑琐碎还是不平凡。前者是由于与Lifshitz Transition的接近度，因此多体凝结能对SC间隙的贡献增强，这是由于非平凡拓扑（Weyl Semimetals）而引起的。拓扑非平凡的材料中的平面条件有望使用带工程方法（静水压力，化学和电掺杂）调整。实验和理论研究将以几个相关的方向进行：（a）完善理论并收集有关Fe-HTS在拓扑Lifshitz过渡的附近以及预期QCP附近的Fe-HTS性质的新实验数据。（b）研究新的超导过渡金属二盐元素，尤其是在拓扑非平凡的光谱中。（c）真正的3D拓扑绝缘材料的设计，合成和研究，作为研究和利用拓扑保护的表面状态的平台。材料和结构将通过固态合成技术，熔体，物理蒸气运输以及脉冲激光沉积技术（PLD/MBE）合成。该项目包括开发用于测量和材料诊断的新技术，与普通运输和光学方法相辅相成。这项研究将由团队由互补领域理论物理学以及实验化学和物理学家组成的专家组成。

项目成果

期刊论文数量（6）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Topological Insulator: Surface Localized States

拓扑绝缘体：表面局域态

DOI：
10.1007/s10948-018-4827-0
发表时间：
2019
期刊：
Journal of Superconductivity and Novel Magnetism
影响因子：
1.8
作者：
Yu. N. Ovchinnikov
通讯作者：
Yu. N. Ovchinnikov

Fate of interaction-driven topological insulators under disorder

无序状态下相互作用驱动的拓扑绝缘体的命运

DOI：
10.1103/physrevb.96.201104
发表时间：
2017-10
期刊：
Phys. Rev. B (Rapid Communications)
影响因子：
0
作者：
Jing Wang;Carmine Ortix;Jeroen van den Brink;Dmitry V. Efremov
通讯作者：
Dmitry V. Efremov

Two-dimensional semimetal in HgTe quantum well under hydrostatic pressure

DOI：
10.1103/physrevb.98.155437
发表时间：
2017-12
期刊：
Physical Review B
影响因子：
3.7
作者：
V. Prudkoglyad;E. Olshanetsky;Z. Kvon;V. Pudalov;N. N. Mikhailov-N.;S. A. Dvoretsky
通讯作者：
V. Prudkoglyad;E. Olshanetsky;Z. Kvon;V. Pudalov;N. N. Mikhailov-N.;S. A. Dvoretsky

Topological Lifshitz transitions