High-Q-Power-GaN - Development of transistors for high-power electronics on low-defect free-standing gallium nitride substrates

High-Q-Power-GaN - 在低缺陷独立式氮化镓衬底上开发高功率电子晶体管

基本信息

批准号：
279952854
负责人：
Professor Dr. Oliver Ambacher
金额：
--
依托单位：
Institut für Nachhaltige Technische Systeme (INATECH)
依托单位国家：
德国
项目类别：
Research Grants
财政年份：
2016
资助国家：
德国
起止时间：
2015-12-31 至 2019-12-31
项目状态：
已结题

来源：
https://gepris.dfg.de/gepris/projekt/279952854?language=en
关键词：
Power GaN Development transistors power

项目摘要

The aim of this research project is to develop AlGaN/GaN based high-power transistors for power conversion on low defect free-standing ammonothermal GaN substrates. The use of ammonothermal grown GaN substrates having a very low dislocation density enables the realization of AlGaN/GaN high power transistors with outstanding electrical properties to exploit the specific physical properties of the GaN material. An important aspect of this proposal is the determination of degradation mechanism of AlGaN/GaN transistors, particularly the breakdown voltages in the GaN buffer structure. Reasons for the reduced breakdown voltages are impurities or structural defects in the GaN, which potentially act as charge carrier traps and generate localized levels in the band gap. Many of the mechanisms for the generation of charge carrier traps are very complex, and as yet incompletely understood. This is because the diversity and density of defects, such as dislocations and point defects, in GaN epitaxial heterostructures is very high due to the deposition process on non-native substrates. In principle, this electron traps can be located at the surface, in the AlGaN barrier layer, at the AlGaN/GaN interface close to the two-dimensional electron gas, or in the GaN buffer layer. In this project, the effects of defects on parameters such as leakage current, threshold voltage, and current-carrying capacity in AlGaN/GaN power transistors will be investigated. A particular object of investigation in this context will be the influence of the carbon doping on the degradation pattern of AlGaN/GaN transistors. Carbon acts as an acceptor in GaN, which is used to compensate the intrinsic n-type conductivity of GaN buffer structures. Recent evidence suggests that certain degradations in the GaN buffer layers of AlGaN/GaN transistors are related to carbon and a high dislocation density. However, the above traps-related effects in heteroepitaxial AlGaN/GaN HEMT are always overlapped by the effects arising from the high defect densities. An unambiguous clarification of whether e.g. a carbon doping may under certain conditions lead to the breakdown voltage of these devices was not possible until now. Using ammonothermal GaN substrates will enable the realization of low defect density AlGaN/GaN power transistors with carbon-compensated GaN buffer layers. With this approach, there is a way to separate the carbonrelated by the dislocation-related effects in AlGaN/GaN based devices. For this purpose, processed power transistors of defect-rich AlGaN/GaN structures grown on non-native substrates (SiC and Si) are systematically compared with power transistors, which were grown homoepitaxially on low-defect ammonothermal GaN substrates.

该研究项目的目的是开发基于Algan/GAN的高功率晶体管，用于低缺陷独立氨油GAN底物的功率转换。使用具有非常低位错密度的氨油生长的GAN底物的使用可以实现具有出色的电气特性的Algan/Gan高功率晶体管，以利用GAN材料的特定物理特性。该提案的一个重要方面是确定Algan/Gan晶体管的降解机制，尤其是GAN缓冲液结构中的故障电压。降低电压降低的原因是GAN中的杂质或结构缺陷，它们可能充当电荷载波陷阱并在带隙中产生局部水平。产生电荷载体陷阱的许多机制非常复杂，但尚未完全理解。这是因为缺陷的多样性和密度（例如位错和点缺陷）在GAN外延异质结构中非常高，这是因为非本地底物的沉积过程很高。原则上，该电子陷阱可以位于表面，Algan屏障层，靠近二维电子气体的Algan/GAN界面，也可以位于GAN缓冲液层。在该项目中，将研究缺陷对诸如渗漏电流，阈值电压和载体/GAN功率晶体管的电流能力等参数的影响。在这种情况下，调查的一个特殊对象将是碳掺杂对Algan/Gan晶体管降解模式的影响。碳是GAN中的受体，用于补偿GAN缓冲液结构的内在N型电导率。最近的证据表明，Algan/GAN晶体管的GAN缓冲层中的某些降解与碳和高位密度有关。但是，上述陷阱相关的效应始终被高缺陷密度产生的效果重叠。明确澄清是否是否在某些条件下，碳掺杂可能导致这些设备的击穿电压到目前为止不可能发生故障。使用氨油GAN底物将实现具有碳补偿的GAN缓冲液层的低缺陷密度Algan/GAN功率晶体管。通过这种方法，有一种方法可以通过基于Algan/GAN的设备中与位错相关的效应分离碳相关的方法。为此，在非本地底物（SIC和SI）上生长的缺陷型Algan/GAN结构的加工功率晶体管系统地将其与功率晶体管进行了比较，该功率晶体管在低缺陷的氨水gan底物上同型生长。

项目成果

期刊论文数量（10）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Full W-Band GaN Power Amplifier MMICs Using a Novel Type of Broadband Radial Stub

DOI：
10.1109/tmtt.2018.2878725
发表时间：
2018-11
期刊：
IEEE Transactions on Microwave Theory and Techniques
影响因子：
4.3
作者：
M. Ćwikliński;C. Friesicke;P. Brückner;D. Schwantuschke;S. Wagner;R. Lozar;H. Massler;R. Quay;O. Ambacher
通讯作者：
M. Ćwikliński;C. Friesicke;P. Brückner;D. Schwantuschke;S. Wagner;R. Lozar;H. Massler;R. Quay;O. Ambacher

AlGaN/GaN High Electron-mobility Varactors on Silicon Substrate

硅衬底上的 AlGaN/GaN 高电子迁移率变容二极管

DOI：
10.23919/gemic.2019.8698186
发表时间：
2019
期刊：
2019 12th German Microwave Conference (GeMiC)
影响因子：
0
作者：
R. Amirpour;D. Schwantuschke;P. Brueckner;R. Quay;O. Ambacher
通讯作者：
O. Ambacher

W-Band LNA MMICs Based on a Noise-Optimized 50-nm Gate-Length Metamorphic HEMT Technology

基于噪声优化的 50 nm 门长变质 HEMT 技术的 W 频段 LNA MMIC

DOI：
10.1109/mwsym.2019.8700792
发表时间：
2019
期刊：
2019 IEEE MTT-S International Microwave Symposium (IMS)
影响因子：
0
作者：
F. Thome;A. Leuther;F. Heinz;O. Ambacher
通讯作者：
O. Ambacher

High-Power Asymmetrical Three-Way GaN Doherty Power Amplifier at C-Band Frequencies

C 频段高功率非对称三路 GaN Doherty 功率放大器

DOI：
10.23919/eumc.2018.8541756
发表时间：
2018
期刊：
2018 13th European Microwave Integrated Circuits Conference (EuMIC)
影响因子：
0
作者：
E. Derguti;E. Ture;S. Krause;D. Schwantuschke;R. Quay;O. Ambacher
通讯作者：
O. Ambacher

190-GHz G-Band GaN Amplifier MMICs with 40GHz of Bandwidth

具有 40GHz 带宽的 190GHz G 频段 GaN 放大器 MMIC

DOI：
10.1109/mwsym.2019.8700762
发表时间：
2019
期刊：
2019 IEEE MTT-S International Microwave Symposium (IMS)
影响因子：
0
作者：
M. Cwiklinski;P. Brückner;S. Leone;C. Friesicke;R. Lozar;H. Maßler;R. Quay;O. Ambacher
通讯作者：
O. Ambacher