Charge compensation in 4H silicon carbide - Simulation, modelling and experimental verification

4H 碳化硅中的电荷补偿 - 仿真、建模和实验验证

• 批准号: 269224269
• 负责人: Privatdozent Dr.-Ing. Tobias Erlbacher
• 金额: --
• 依托单位: Lehrstuhl für Elektronische Bauelemente
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2015
• 资助国家: 德国
• 起止时间: 2014-12-31 至 2019-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/269224269?language=en
• 关键词: Charge; compensation; 4H; silicon; carbide

For power semiconductor devices in silicon, device patterns with charge compensation between adjacent p- and n-doped semiconductor regions are applied. These patterns enable the realization of unipolar devices with blocking voltage under blocking operation and low device resistance in forward conduction. First semiconductor devices fabricated in silicon carbide employing charge compensation patterns are following design rules that are either based on theoretical calculations which are based on the well-controlled silicon technology or using non-empiric trial-and-error methods. Hereby, a suitable design of the compensation patterns is achieved either with a poor degree of compensation at all or only by repetitive process variations.This proposal is aiming to provide the foundation for the realization of charge compensation patterns with a high degree of compensation, and to conduct a systematic investigation regarding their electrical characteristics and the impact of physical effects. In particular, the impact of incomplete activation and ionization of dopants in SiC as well as the surface passivation on the degree of compensation, the breakdown voltage and the drift resistance is investigated. This allows for an improvement of existing simulation models for higher accuracy and the derivation of an analytical description of these charge compensation patterns that are not (as in silicon) based on a fully controlled semiconductor technology.With the aid of analytical modelling based on charge compensation patterns in silicon as a starting point and considering incomplete activation of dopants, both modelling and two dimensional TCAD simulations for lateral charge compensation patterns in silicon carbide will be implemented. The fabrication of lateral test patterns corresponding to the simulations and their electric characterization are used to increase the modelling accuracy and extension of the underlying models based on the measurement results. These models are then used to transfer and verify the results to lateral power transistors in SiC. Additionally, dynamic switching experiments will be carried out to evaluate the impact of physical effects like incomplete ionisation on electrical properties (e.g. avalanche breakdown) in charge compensation patterns. Finally, vertical charge compensation patterns will be realized to validate the methodology of this scientific approach as a whole.The results from this research project will simplify the fabrication of lateral and vertical power semiconductor devices on 4H-SiC by provision of accurate physical models for charge compensation.

对于硅中的功率半导体设备，应用了相邻P-和N掺杂半导体区域之间具有电荷补偿的装置图案。这些模式可以实现在阻塞操作下具有阻塞电压和向前传导中电阻低的电压的实现。采用电荷补偿模式制造的第一个半导体设备遵循设计规则，这些规则基于理论计算，这些计算基于基于良好控制的硅技术，或者使用非经验性试验和纠正方法。在此，以较差的补偿程度或仅通过重复过程变化而实现了薪酬模式的合适设计。该提案旨在为实现高度补偿的费用补偿模式提供基础，并进行高度的补偿模式，并就其电气特征和物理效应的影响进行系统研究。特别是，研究了掺杂剂在SIC以及表面钝化对补偿程度，崩溃电压和漂移电阻程度的不完全激活和电离的影响。这允许改进现有的模拟模型，以提高准确性和基于完全控制的半导体技术（如在硅中）的这些电荷补偿模式的分析描述，并基于硅的起点和考虑二层TCAD型TCAD tocad tocad insirate in silits offers offer的分析模型，这些模型基于电荷补偿模式的帮助碳化物将实施。基于测量结果，使用与模拟及其电特性相对应的横向测试模式及其电特性来提高基础模型的建模准确性和扩展。然后，这些模型用于将结果传输和验证SIC中的横向功率晶体管。此外，将进行动态切换实验，以评估物理效应的影响，例如电离对电气性能（例如雪崩崩溃）的影响。最后，将实现垂直电荷补偿模式，以验证整个科学方法的方法。该研究项目的结果将通过提供准确的物理模型来简化4H-SIC上的横向和垂直功率半导体设备的制造。

项目成果

Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC

注入 p 型 4H-SiC 中的铝受体激活和电荷补偿

• DOI: 10.1063/1.5096440
• 发表时间: 2019
• 期刊: AIP Advances
• 影响因子: 1.6
• 作者: J. Weiße;M. Hauck;M. Krieger;A. J. Bauer;T. Erlbacher
• 通讯作者: T. Erlbacher

Determination of Compensation Ratios of Al-Implanted 4H-SiC by TCAD Modelling of TLM Measurements

• DOI: 10.4028/www.scientific.net/msf.963.445
• 发表时间: 2019-01-01
• 期刊: Materials Science Forum
• 作者: Kocher, M.;Yao, B. T.;Bauer, A. J.
• 通讯作者: Bauer, A. J.

Impact of Al-Ion Implantation on the Formation of Deep Defects in n-Type 4H-SiC

Al离子注入对n型4H-SiC深层缺陷形成的影响

• DOI: 10.1109/iit.2018.8807980
• 发表时间: 2018
• 期刊: 2018 22nd International Conference on Ion Implantation Technology (IIT)
• 作者: J. Weiße;C. Csato;M. Hauck;J. Erlekampf;S. Akhmadaliev;M. Rommel;H. Mitlehner;M. Rüb;M. Krieger;A. Bauer;V. Häublein;T. Erlbacher;L.Frey
• 通讯作者: L.Frey

RESURF n-LDMOS Transistor for Advanced Integrated Circuits in 4H-SiC

用于 4H-SiC 高级集成电路的 RESURF n-LDMOS 晶体管

• DOI: 10.1109/ted.2020.3002730
• 发表时间: 2019
• 期刊: IEEE Transactions on Electron Devices
• 影响因子: 3.1
• 作者: J. Weiße;C. Matthus;H. Mitlehner;T.Erlbacher
• 通讯作者: T.Erlbacher

Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices

• DOI: 10.4028/www.scientific.net/msf.924.184
• 发表时间: 2018-06
• 期刊: Materials Science Forum
• 作者: J. Weiße;Martin Hauck;T. Sledziewski;Mattias Tschiesche;M. Krieger;A. Bauer;H. Mitlehner;L. Frey;T. Erlbacher