Collaborative Research: FuSe: Spin Gapless Semiconductors and Effective Spin Injection Design for Spin-Orbit Logic

合作研究：FuSe：自旋无间隙半导体和自旋轨道逻辑的有效自旋注入设计

• 批准号: 2328827
• 负责人: Heng Wang
• 金额: $ 28万
• 依托单位: Illinois Institute of Technology
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2023
• 资助国家: 美国
• 起止时间: 2023-10-01 至 2026-09-30
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2328827&HistoricalAwards=false
• 关键词: Collaborative; Research; FuSe; Spin; Gapless

Non-technical Description:Modern life has been transformed by electronics based on moving electrons through nanoscale semiconductor devices. Spintronics combine electronics with spin, an intrinsic property of elementary particles, making possible even smaller devices that operate at higher speeds and consume less energy. Spintronics could thus revolutionize electronics for data processing, communication, and storage. This project spans design and synthesis of novel materials to fabrication and characterization of advanced spintronic devices. The team will synthesize custom-designed semiconducting alloys to read data more efficiently in a spintronic logic circuit. A fundamental understanding of the structural-performance relationship for spintronic materials will be gained through characterization of structure and materials properties. Collectively, the outcome of this project is expected to be information on how to manufacture a highly efficient spintronic device. The team’s workforce development plan has a central theme of technology communication. The approach seeks to educate and develop faculty, students, and the future workforce to be leaders in the semiconductor industry. Undergraduate and graduate students from five institutions will be trained to better communicate and identify transferable skills to make themselves marketable to semiconductor industry employers. This training will serve as a blueprint for the launch of a micro-credential in technology communication with integrated Industry-Recognized Credentials, and this project will support 75 students to receive this credential. Outreach events will target both undergraduate and K-12 audiences to raise awareness of jobs in the semiconductor industry. These activities will be reinforced by workforce development activities and industry partnerships. Technical Description:Spin gapless semiconductors (SGS) are a new class of spintronic materials that have a finite bandgap in their electronic band structure for electrons with one spin and a zero bandgap for electrons with the other spin, which is advantageous for spintronic applications. Current SGS compounds often display atomic defects and disordering, crucial elements for the material's spin polarization and injection capabilities. In order to harness the unique advantage of SGS as efficient spin injectors, which is indispensable for spin logic devices such as the magneto-electric spin-orbit (MESO) logic, the team is using Mn2CoAl as a platform to develop a strategy that stabilizes the near-SGS behavior through understanding and manipulation of influences from composition, processing, and interfaces. This is a collaborative material-process-device co-design project. At the materials level, the team is determining the relationship between chemical composition, phases, atomic ordering, and resultant electric and magnetic transport properties. On the thin film synthesis level, the team is performing low-energetic, epitaxial-quality film growth with sputter beam epitaxy. Lessons learned from the fundamental materials research will be used to avoid deleterious defects via composition and processing control. At the device level, the team is nanopatterning thin SGS layers into local spin injection junctions for the spin-to-charge readout side of the MESO device. Overall, this research will not only develop a strategy to use SGS materials for spintronic devices but also deepen current understanding on how materials composition, processing, and interfaces collectively impact the performance of a spin injector.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术描述：现代生活已由基于纳米级半导体设备移动电子设备的电子设备转化。 Spintronics将电子与自旋（基本颗粒的固有特性）相结合，即使以较高速度运行并消耗较少的能量的设备也可能使得能量。因此，SpinTronics可以革新电子设备用于数据处理，通信和存储。该项目涵盖了新型材料的设计和合成，以制造和表征高级自旋设备。该团队将合成自定义设计的半导体合金，以更有效地在Spintronic逻辑电路中读取数据。通过表征结构和材料特性的表征，将获得对旋转材料结构性绩效关系的基本理解。总体而言，该项目的结果有望是有关如何制造高效的Spintronic设备的信息。该团队的劳动力发展计划具有技术沟通的中心主题。该方法旨在教育和发展教师，学生和未来的劳动力，成为半导体行业的领导者。来自五个机构的本科生和研究生将接受培训，以更好地沟通和确定可转移的技能，以使自己可以在半导体行业雇主身上进行市场销售。该培训将作为与综合行业认可的资格进行技术通信的微观沟通的蓝图，该项目将支持75名学生获得此证书。外展活动将针对本科和K-12受众群体，以提高对半导体行业的工作的认识。这些活动将由劳动力发展活动和行业伙伴关系加强。技术描述：无自旋间隙半导体（SGS）是一类新的自旋材料，其电子带的电子带中具有有限的电子带的带隙，具有一种自旋，并且具有另一个旋转的电子带零带，这对于自旋应用是有利的。当前的SGS化合物经常显示原子缺陷和无序，对于材料的自旋极化和注射能力的关键元素。为了利用SGS作为高效自旋喷油器的独特优势，对于诸如磁电旋转轨道（MESO）逻辑等自旋逻辑设备（例如旋转逻辑设备）是必不可少的，该团队正在使用MN2Coal作为一种平台来开发一种策略，可以通过理解和对组成，处理和互动的影响来稳定近SG的行为，并进行了处理。这是一个协作的材料制作设备共同设计项目。在材料一级，团队正在确定化学成分，相，原子订购以及由此产生的电气和磁运输特性之间的关系。在薄膜的合成水平上，该团队正在伴随着溅射束外延的低能性，外在质量的膜增长。从基本材料研究中汲取的经验教训将用于避免通过组成和加工控制的有害缺陷。在设备级别，该团队正在将薄薄的SGS层纳入局部旋转注入连接处，以用于Meso设备的旋转式读数侧。总体而言，这项研究不仅将制定一种使用SGS材料进行旋转设备的策略，而且还加深了人们对材料组成，处理和接口如何共同影响旋转注射的性能的最新理解。本奖奖反映了NSF的法定任务，并被认为是通过使用基金会的知识智能和更广泛的影响来通过评估来获得支持的珍贵的，这是珍贵的。