EAGER: Quantum Manufacturing: Robust Atom-based Silicon Quantum Devices

EAGER：量子制造：强大的基于原子的硅量子器件

• 批准号: 2240337
• 负责人: Garnett Bryant
• 金额: $ 29.24万
• 依托单位: University of Maryland, College Park
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2023
• 资助国家: 美国
• 起止时间: 2023-01-01 至 2024-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2240337&HistoricalAwards=false
• 关键词: EAGER; Quantum; Manufacturing; Robust; Atom; EAGER; Quantum; Manufacturing; Robust; Atom

This EArly-concept Grant for Exploratory Research (EAGER) Quantum Manufacturing award supports research to expand manufacturing processes for semiconductor electronic and quantum devices by advancing the science needed to manufacture devices down to the size-scale approaching single atoms. The results of this research will enable manufacturing of semiconductor devices at size scales not possible today, advancing national prosperity and security. A scanning tunneling microscope is used as a fabrication tool to deterministically place individual phosphorus dopant atoms in silicon with near lattice site perfection. Atomic-scale gates and leads for few atom transistors, dopant-based few-atom qubit devices and dopant arrays for analog quantum simulation can now be fabricated for scientific experiments. The exact positions of dopants play an essential role in device performance, driving the need for atomic perfection. Current imprecision in dopant concentration or dopant position still prevents robust manufacturing. Atom-based silicon quantum devices have generated excitement because they promise to provide the smallest, most dense quantum devices while still leveraging the power of traditional silicon electronics. Robust atom-based silicon quantum devices require advanced manufacturing with precise control over the number and precision of dopant placement. The work here will push traditional nanoscale manufacturing science toward robust atom-scale manufacturing where silicon-based devices can be routinely fabricated atom-by-atom. The research will accelerate manufacturing into the realm of atom-scale devices. Developing robust manufacturing of atom-scale solid state quantum devices will help address the critical national need for successful quantum platforms that can be integrated with conventional electronics.Feedback-controlled lithography was developed to allow atom-scale perfect placement of an individual phosphorus (P) dopant on silicon (Si). This research will advance from one-time demonstrations of perfect placement to robust precise placement of individual atoms that can be used to manufacture atom-scale solid-state Si devices. Perfect placement will be extended to acceptors like boron (B). This additional capability will provide a wider class of quantum devices that can be manufactured and exploited. Density functional theory will be used to simulate scanning tunneling images and determine preferred adsites for B2H6 and its breakdown species. A similar catalog of images will be generated for two-donor and two-acceptor structures. The catalogs will be used to identify deposited structures and new feedback control will be developed to ensure precise placement of B acceptors and multi-dopant structures. Transport and related experiments on these devices will be performed and compared to theory to verify the precision fabrication of atom geometries as designed.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

这项探索性研究（急切）量子制造奖的早期概念赠款通过推进制造设备所需的科学，直至接近单个原子的尺寸尺度，以扩大半导体电子和量子设备的制造过程。这项研究的结果将使当今不可能以尺寸尺度制造半导体设备，从而促进国家繁荣和安全。扫描隧道显微镜用作制造工具，以确定性地将单个磷原子放置在硅中，近晶格位点完美。现在，可以为科学实验制造原子尺度的大门和引线，用于几个原子晶体管，基于掺杂剂的几个原子量子设备和用于模拟量子模拟的掺杂阵阵列。掺杂剂的确切位置在设备性能中起着至关重要的作用，从而促进了对原子完美的需求。当前在掺杂剂浓度或掺杂剂位置的不精确仍然可防止强大的制造。基于原子的硅量子设备引起了兴奋，因为它们有望提供最小，最密集的量子设备，同时仍利用传统硅电子的功能。强大的基于原子的硅量子设备需要高级制造，并精确控制掺杂剂的数量和精度。这里的工作将把传统的纳米级制造科学推向强大的原子尺度制造，可以通常地制造基于硅的设备。该研究将加速制造到原子级设备的领域。开发可靠的原子尺度固态量子设备的强大生产将有助于满足可以与常规电子设备集成的成功量子平台的关键需求。开发了反馈控制的光刻，以允许原子量表的完美放置单个磷（P）硅（SI）的磷酸化（p）popant。这项研究将从一次完美放置的一次性演示发展到可用于制造原子尺度固态SI设备的单个原子的鲁棒放置。完美的放置将扩展到硼（B）等受体。这种额外的功能将提供可以制造和利用的更广泛的量子设备。密度功能理论将用于模拟扫描隧道图像，并确定B2H6及其分解物种的首选Adsites。将生成类似的图像目录，用于两位和两受感应器结构。目录将用于识别沉积的结构，并将开发新的反馈控制，以确保B受体和多型结构的精确放置。将进行这些设备上的运输和相关实验，并将其与理论进行比较，以验证设计原子几何形状的精确制造。该奖项反映了NSF的法定任务，并被认为是值得通过基金会的知识分子优点和更广泛影响的评估来获得支持的。