CAREER: GaSb-based Photonic Integrated Circuits for Short- and Mid-Wave Infrared Applications

职业：用于短波和中波红外应用的 GaSb 基光子集成电路

• 批准号: 2144375
• 负责人: Shamsul Arafin
• 金额: $ 50万
• 依托单位: Ohio State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2022
• 资助国家: 美国
• 起止时间: 2022-02-15 至 2027-01-31
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2144375&HistoricalAwards=false
• 关键词: CAREER; GaSb; based; Photonic; Integrated

Photonic integrated circuits (PICs) based on a semiconductor made of antimony and gallium (often referred to as “antimonide”) with monolithically-integrated active and passive components that operate in the extended short- and mid-wave infrared wavelength regime are currently of significant research interest due to a wide range of emerging applications, including chemical sensing, industrial process control, and non-invasive medical diagnostics. This wavelength regime of the electromagnetic spectrum is important because it contains a number of spectral features such as strong overtones and combination molecular absorption bands in gas- and liquid-phase molecules for sensing applications. This eye-safe spectral regime also has an atmospheric transmission window, which makes it suitable for LiDAR/remote sensing applications. This Faculty Early Career Development (CAREER) project will develop the first non-telecom photonic IC platform based on the antimonide material system. The scientific insights and technological advances stemming from the research will also broadly impact the field of photonics by enabling operation in this underdeveloped spectral region. Since the research topic will cross different disciplines of science and engineering, such as optics, materials science, electrical engineering, physics, and chemistry, it offers a range of potential, hands-on learning activities that will engage students of varying backgrounds. In addition to high impact research advancement, this project will support interdisciplinary education activities in nanoscience and nanotechnology. The educational and outreach components are aimed at promoting interests in science, technology, engineering, and mathematics (STEM) disciplines and propagating educational opportunities by exposing K-12, undergraduate and graduate students to advancements in optics and photonics.The overarching goals of this project are to advance intellectual understanding of the low-bandgap antimonide material system for the development and demonstration of a photonic integrated circuits (PICs) technology platform in the extended short- and mid-wave infrared (S-MWIR) spectral band and to expand educational opportunities related to infrared materials science and device technology. The primary research goals of the proposed project are to (1) develop the first non-telecom photonic integrated circuits platform, (2) realize novel single-chip–based widely tunable lasers and other PIC components with an emission wavelength range of 2.2-3.4 μm and finally (3) demonstrate highly-integrated widely tunable sensing PICs. This integrated photonic demonstration will prove feasibility for future, on-chip, low-cost, compact, robust, and energy-efficient photonic subsystems that will enable a wide range of practical applications. The work performed within this project will generate new fundamental knowledge related to the GaSb material system and build innovations at the photonic components- as well as -IC levels. To establish such a monolithic platform, widely-tunable semiconductor lasers, photodetectors, low-loss waveguides and 1 × 2 optical splitters in the wavelength range of 2.2-3.4 µm, will be designed, grown, fabricated and tested. Molecular beam epitaxy will be used for the growth of device structures. Multiple, individual SG-DBR (Sampled Grating-Distributed Bragg Reflector) lasers with tuning ranges of 150-250 nm (depending on the center emission wavelength) will be needed to cover the entire targeted range. As a result, the highly-integrated optical devices and subsystems will simultaneously improve performance and efficiency as well as help meet low size, weight, power and cost (SWaP-C) constraints for next-generation S-MWIR photonic technologies.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

基于锑和镓（通常称为“锑化物”）制成的半导体的光子集成电路（PIC），具有单片集成的有源和无源元件，可在扩展的短波和中波红外波长范围内工作，目前具有重要意义。由于化学传感、工业过程控制和非侵入性医疗诊断等广泛的新兴应用，电磁频谱的这种波长范围很重要，因为它包含许多光谱特征，因此引起了人们的研究兴趣。作为用于传感应用的气相和液相分子中的强泛音和组合分子吸收带，这种对人眼安全的光谱范围还具有大气传输窗口，这使其适合激光雷达/遥感应用。 CAREER）项目将开发第一个基于锑化物材料系统的非电信光子IC平台，该研究产生的科学见解和技术进步也将通过在这个不发达的光谱中运行而广泛影响光子学领域。由于研究主题将跨越科学和工程的不同学科，例如光学、材料科学、电气工程、物理和化学，因此它提供了一系列潜在的实践学习活动，可以吸引不同背景的学生。除了具有高影响力的研究进展外，该项目还将支持纳米科学和纳米技术方面的跨学科教育活动，其教育和外展活动旨在促进人们对科学、技术、工程和数学 (STEM) 学科的兴趣，并通过暴露 K 来传播教育机会。 -12、本科生和研究生光学和光子学的进步。该项目的总体目标是增进对低带隙锑化物材料系统的理解，以开发和演示扩展的短波和中波光子集成电路（PIC）技术平台红外（S-MWIR）光谱带并扩大与红外材料科学和器件技术相关的教育机会 该项目的主要研究目标是（1）开发第一个非电信光子集成。电路平台，(2) 实现发射波长范围为 2.2-3.4 μm 的新型单芯片宽可调激光器和其他 PIC 组件，最后 (3) 演示高度集成的宽可调传感 PIC。该集成光子演示将证明这一点。未来片上、低成本、紧凑、稳健和节能的光子子系统的可行性，这些子系统将实现广泛的实际应用。该项目中进行的工作将产生与相关的新基础知识。 GaSb 材料系统，并在光子元件和 IC 层面进行创新，以建立这样一个单片平台、广泛可调的半导体激光器、光电探测器、低损耗波导和 2.2 波长范围内的 1 × 2 分光器。 -3.4 µm，将被设计、生长、制造和测试，用于多个单独的 SG-DBR 的生长。需要调谐范围为 150-250 nm（取决于中心发射波长）的光栅分布式布拉格反射器激光器来覆盖整个目标范围，因此，高度集成的光学器件和子系统将同时提高性能和性能。效率并有助于满足下一代 S-MWIR 光子技术的低尺寸、重量、功耗和成本 (SWaP-C) 限制。该奖项是 NSF 的法定使命，并被认为值得通过以下方式获得支持使用基金会的智力价值和更广泛的影响审查标准进行评估。

项目成果

Towards GaSb-Based Monolithically Integrated Widely-Tunable Lasers for Extended Short- and Mid-Wave Infrared Wavelengths

面向 GaSb 基单片集成宽可调激光器，用于扩展短波和中波红外波长

• DOI: 10.1109/jqe.2023.3236395
• 发表时间: 2023-01
• 期刊: IEEE Journal of Quantum Electronics
• 影响因子: 2.5
• 作者: You, Weicheng;Dwivedi, Sarvagya;Faruque, Imad I.;John, Demis D.;McFadden, Anthony P.;Palmstrom, Christopher J.;Coldren, Larry A.;Arafin, Shamsul
• 通讯作者: Arafin, Shamsul

Design of GaSb-based monolithic passive photonic devices at wavelengths above 2 µm

波长超过 2 µm 的 GaSb 基单片无源光子器件的设计

• DOI: 10.1088/2515-7647/ace509
• 发表时间: 2023-07
• 期刊: Journal of Physics: Photonics
• 作者: Sumon, Md Saiful;Sankar, Shrivatch;You, Weicheng;Faruque, Imad I;Dwivedi, Sarvagya;Arafin, Shamsul
• 通讯作者: Arafin, Shamsul