NSF-DFG: Solvent-Free Manufacturing of Perovskite Large-Scale Electronics

NSF-DFG：钙钛矿大型电子产品的无溶剂制造

• 批准号: 2135937
• 负责人: Oana Jurchescu
• 金额: $ 33.5万
• 依托单位: Wake Forest University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2022
• 资助国家: 美国
• 起止时间: 2022-02-01 至 2025-01-31
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2135937&HistoricalAwards=false
• 关键词: NSF; DFG; Solvent; Free; Manufacturing

Future generations of optoelectronic devices will enhance the quality of our lives and shape major industries, as well as the medical sector and national security. To impact all societal sectors, semiconductor manufacturing must develop techniques that circumvent the current technological and economical constraints. This project utilizes laser printing for low-cost manufacturing of optoelectronic devices under ambient conditions. A solvent-free, environmental-friendly technique, which is scalable at technologically meaningful levels, could provide for broader development and an alternative path for the Internet of Things (IoT). The main focus is the processing of metal halide perovskite devices, but the methods developed will be applicable to other thin-film technologies, thus enhancing the impact. As laser printed devices mature enough to enter the marketplace, there will be a rising need for highly skilled workers who can implement this technology. This project will provide a multidisciplinary and multicultural environment for training undergraduate and graduate students which prepares them for joining the global workforce. The project creates and nurtures a culture of inclusive excellence which will enhance the scientific literacy of the general public.The goal of this project is to develop the fundamental understanding of perovskite film formation using laser printing and to apply it towards the development of manufacturing protocols for high performance optoelectronic devices. This method is expected to provide an alternative method to process electronic devices and to enable wide-spread applications that are currently not possible. This could potentially advance industries where traditional electronics are not applicable or would be cost-prohibitive. The project will combine materials processing, advanced spectroscopy and device physics to develop perovskite thin films with electrical, electronic and optical properties similar or superior to those obtained via other deposition methods with high spatial uniformity over large areas. The understanding developed over the film deposition and processing will allow for the extension of the method to other materials systems. The films will be incorporated in proof-of-concept devices (transistors, photodetectors, photovoltaics, light-emitting diodes) fabricated on flexible substrates. Successful completion of these objectives will generate detailed knowledge on the key processes and mechanisms involved in film formation using this manufacturing method.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

未来几代光电设备将提高我们的生活质量并塑造主要行业以及医疗部门和国家安全。为了影响所有社会部门，半导体制造必须开发出能够规避当前技术和经济限制的技术。该项目利用激光打印在环境条件下低成本制造光电器件。一种无溶剂、环保的技术，可在技术上有意义的水平上进行扩展，可以为物联网（IoT）提供更广泛的发展和替代路径。主要重点是金属卤化物钙钛矿器件的加工，但开发的方法将适用于其他薄膜技术，从而增强影响。随着激光打印设备足够成熟并进入市场，对能够实施该技术的高技能工人的需求将会不断增加。该项目将为培训本科生和研究生提供多学科和多文化的环​​境，为他们加入全球劳动力队伍做好准备。该项目创造并培育了一种包容性卓越的文化，这将提高公众的科学素养。该项目的目标是加深对使用激光打印形成钙钛矿薄膜的基本理解，并将其应用于开发制造协议高性能光电器件。该方法有望提供一种处理电子器件的替代方法，并实现目前不可能的广泛应用。这可能会推动传统电子产品不适用或成本过高的行业的发展。该项目将结合材料加工、先进光谱学和器件物理来开发钙钛矿薄膜，其电气、电子和光学特性类似于或优于通过其他沉积方法获得的薄膜，并且在大面积上具有高空间均匀性。对薄膜沉积和加工的理解将使该方法扩展到其他材料系统。这些薄膜将被纳入在柔性基板上制造的概念验证设备（晶体管、光电探测器、光伏器件、发光二极管）中。成功完成这些目标将产生有关使用这种制造方法形成薄膜的关键过程和机制的详细知识。该奖项反映了 NSF 的法定使命，并通过使用基金会的智力价值和更广泛的影响审查标准进行评估，被认为值得支持。

项目成果

Intermolecular charge transfer enhances the performance of molecular rectifiers

分子间电荷转移增强分子整流器的性能

• DOI: 10.1126/sciadv.abq7224
• 发表时间: 2022-08
• 期刊: Science Advances
• 影响因子: 13.6
• 作者: Sullivan, Ryan P.;Morningstar, John T.;Castellanos;Bradford, Robert W.;Hofstetter, Yvonne J.;Vaynzof, Yana;Welker, Mark E.;Jurchescu, Oana D.
• 通讯作者: Jurchescu, Oana D.

A Study on Contact Resistance as a Function of Surface Treatment in Perovskite Field-Effect Transistors

钙钛矿场效应晶体管中接触电阻与表面处理函数的研究

• DOI: 10.1021/acsaelm.3c00149
• 发表时间: 2023-07
• 期刊: ACS Applied Electronic Materials
• 影响因子: 4.7
• 作者: Tyznik, Colin;Waldrip, Matthew;Sullivan, Ryan P.;Mirhosseini, Motahhare;Berry, Adam;Dwyer, Sean;Cakir, Hurriyet Yuce;Coffey, Tonya;Loo, Yueh;Jurchescu, Oana D.
• 通讯作者: Jurchescu, Oana D.

Humidity sensors based on molecular rectifiers

基于分子整流器的湿度传感器

• DOI: 10.1039/d2nr04498f
• 发表时间: 2022-12
• 期刊: Nanoscale
• 影响因子: 6.7
• 作者: Sullivan, Ryan P.;Castellanos;Ma, Renate;Welker, Mark E.;Jurchescu, Oana D.
• 通讯作者: Jurchescu, Oana D.