Collaborative Research: DMREF: Quasi-Direct Semiconductors

合作研究：DMREF：准直接半导体

基本信息

批准号：
2119583
负责人：
Jose Menendez
金额：
$ 86.56万
依托单位：
Arizona State University
依托单位国家：
美国
项目类别：
Standard Grant
财政年份：
2021
资助国家：
美国
起止时间：
2021-10-01 至 2025-09-30
项目状态：
未结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=2119583&HistoricalAwards=false
关键词：
Collaborative Research DMREF Quasi Direct

项目摘要

Nontechnical DescriptionThe rapid identification of materials and structures with properties tailored to specific applications is a fundamental aspect of the Materials Genome Initiative. A basic prerequisite for the success of the Initiative is the ability to predict the targeted properties starting from basic information about the atomic composition and configurations in the material. For devices such as solar cells, detectors, light-emitting diodes, and lasers, the key design consideration is the fraction of the incident light energy absorbed at any particular wavelength. This DMREF project focuses on a particular class of materials, dubbed “quasi-direct” semiconductors, for which a satisfactory theory of light absorption does not exist. The project will develop the theoretical tools needed for the calculation of optical absorption in quasi-direct semiconductors and validate the new theoretical methods by carrying out optical experiments in structures optimized for the accurate measurement of the absorption coefficient. More than 200 quasi-direct semiconductors have already been identified in the Materials Project database, and this project will make it possible to incorporate such materials as optical components of future devices. All codes released will be open source to maximize societal impact, and the semiconductor industry will also benefit from the highly trained STEM workforce delivered by the project. A strong educational focus will be placed on undergraduate students by partnering with the Arizona State University (ASU) Sundial Project, which recruits and mentors students who traditionally have limited access to STEM careers. At the University of Texas at Austin (UT Austin), undergraduates will be directly involved in the development of the new codes. Technical DescriptionIn quasi-direct semiconductors, the energy threshold for vibration-assisted light absorption (the so-called indirect gap) is only slightly below the energy threshold for direct light absorption (the direct gap). Because of this proximity, the quantum-mechanical second-order perturbation theory expressions for vibrational-assisted absorption diverge as the photon energy approaches the direct gap, leading to unphysical predictions. The proposed solutions include the development of many-body quasi-degenerate perturbation theory and the use of a non-perturbative special displacement method by the team at UT Austin. The experimental validation requires special samples and materials, since the absorption coefficient must be determined with high accuracy over a spectral range where it changes by orders of magnitude. The needed samples will be fabricated at ASU using custom Chemical Vapor Deposition methods, and the optical measurements will also be performed by the ASU team.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术描述快速识别具有适合特定应用的特性的材料和结构是材料基因组计划的一个基本方面，该计划成功的基本先决条件是能够从有关原子组成和结构的基本信息开始预测目标特性。对于太阳能电池、探测器、发光二极管和激光器等设备，关键的设计考虑因素是在任何特定波长下吸收的入射光能量的比例。该项目将开发计算准直接半导体光吸收所需的理论工具，并通过实施验证新的理论方法。为精确测量吸收系数而优化的结构中的光学实验已经在材料项目数据库中确定了超过 200 种准直接半导体，该项目将使将此类材料纳入未来设备的光学组件成为可能。发布的代码将开源以最大化通过与亚利桑那州立大学 (ASU) Sundial 项目合作，该项目将重点关注本科生，该项目招募并指导本科生。传统上，在德克萨斯大学奥斯汀分校（UT Austin），本科生将直接参与新代码的开发。技术描述在准直接半导体中，振动辅助光吸收的能量阈值（所谓的间接间隙）仅略低于直接光吸收的能量阈值（直接间隙），由于这种接近，振动辅助吸收的量子力学二阶微扰理论表达式随着光子能量接近直接间隙而发散，导致。提出的解决方案包括开发多体准简并扰动理论以及使用 UT 奥斯汀团队的非扰动特殊位移方法，因为吸收系数，实验验证需要特殊的样本和材料。必须所需的样品将在 ASU 使用定制的化学气相沉积方法制造，并且光学测量也将由 ASU 团队进行。该奖项反映了 NSF 的法定要求。使命，并通过使用基金会的智力价值和更广泛的影响审查标准进行评估，被认为值得支持。

项目成果

期刊论文数量（4）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Excitonic effects at the temperature-dependent direct bandgap of Ge

Ge 随温度变化的直接带隙的激子效应

DOI：
10.1063/5.0080158
发表时间：
2022-04
期刊：
Journal of Applied Physics
影响因子：
3.2
作者：
Emminger, Carola;Samarasingha, Nuwanjula S.;Rivero Arias, Melissa;Abadizaman, Farzin;Menéndez, José;Zollner, Stefan
通讯作者：
Zollner, Stefan

Ultra-low temperature synthesis of Ge-based optical materials and devices on Si using GeH 3 Cl

使用GeH 3 Cl在Si上超低温合成Ge基光学材料和器件

DOI：
10.1039/d2tc02862j
发表时间：
2022-09
期刊：
Journal of Materials Chemistry C
影响因子：
6.4
作者：
Zhang, Aixin;Mircovich, Matthew A.;Ringwala, Dhruve A.;Poweleit, Christian D.;Roldan, Manuel A.;Menéndez, José;Kouvetakis, John
通讯作者：
Kouvetakis, John

Synthesis of short-wave infrared Ge1− y Sn y semiconductors directly on Si(100) via ultralow temperature molecular routes for monolithic integration applications

通过超低温分子路线直接在 Si(100) 上合成短波红外 Ge1-y Sn y 半导体，用于单片集成应用

DOI：
10.1116/6.0002052
发表时间：
2022-12
期刊：
Journal of Vacuum Science & Technology A
影响因子：
2.9
作者：
Xu, Chi;Hu, Ting;Zhang, Aixin;Ringwala, Dhruve A.;Menéndez, José;Kouvetakis, John
通讯作者：
Kouvetakis, John

Consistent optical and electrical determination of carrier concentrations for the accurate modeling of the transport properties of n-type Ge

对载流子浓度进行一致的光学和电学测定，以准确模拟 n 型 Ge 的输运特性