MRI: Acquisition of a Millimeter-wave Vector Network Analyzer and a Probe Station Capable of a Single Sweep from 70 kHz to 220 GHz

MRI：获取毫米波矢量网络分析仪和能够在 70 kHz 至 220 GHz 范围内进行单次扫描的探针台

• 批准号: 2117305
• 负责人: James Hwang
• 金额: $ 70.87万
• 依托单位: Cornell University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2021
• 资助国家: 美国
• 起止时间: 2021-09-01 至 2025-08-31
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2117305&HistoricalAwards=false
• 关键词: MRI; Acquisition; Millimeter; wave; Vector

The proposed instrumentation is a 220-GHz vector network analyzer (VNA). A VNA is usually the heart of a high-frequency test lab for measuring both the magnitude and phase of scattering parameters such as the reflection and transmission coefficients of materials, devices and circuits. The proposed ultra-wideband VNA will enable the research on nanoelectronics materials and devices for future generation of wireless communication and Internet of Things above 110 GHz at Cornell and worldwide. The knowledge and experience gained in the research up to 220 GHz will serve as the foundation for research in the terahertz frequency range. Additionally, the proposed VNA will enhance the research on quantum-computing devices, microelectromechanical sensors, biosensors, high-speed integrated circuits, energy-efficient power devices, and sensors for cosmic radiation. Among NSF’s 10 big ideas, the research enabled or enhanced by the proposed VNA will impact ideas for Future of Work, Quantum Leap, Understanding the Rules of Life, and Windows on the Universe. The proposed VNA will be part of the Cornell NanoScale Facility (CNF), which has a long and excellent history in providing efficient access to nanotechnology infrastructure and expertise, as well as operating and maintaining major research instrumentation. CNF, in turn, is part of the NSF-supported National Nanotechnology Coordinated Infrastructure with national impact. Evidenced by the letters of collaboration, there is a world-wide interest in using the proposed VNA. The interested users include those from major research universities, historically black colleges and universities, minority serving institutions, major companies, and start-ups.The proposed ultra-wideband VNA will be one of the firsts in the world. It was announced by the Anritsu Company last year and is uniquely based on the newly developed 0.6-mm-diameter coaxial components, making it possible for measurements with a single and continuous sweep of frequencies from 70 kHz to 220 GHz. This is fundamentally different from conventional VNAs that are based on waveguides with segmented bandwidths above 110 GHz. As the result, the proposed broadband VNA will enable large-signal nonlinear measurements of gain-compression, amplitude-to-phase distortion, harmonic generation, intermodulation, time-domain reflectivity, noise, etc. The proposed VNA will enable pulsed measurements, which are critical to high-power devices. In the future, the proposed VNA can be retrofitted with frequency extenders to extend its bandwidth to 1.1 THz."This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

所提议的仪器是 220 GHz 矢量网络分析仪 (VNA)，VNA 通常是高频测试实验室的核心，用于测量散射参数的幅度和相位，例如材料、设备和材料的反射和传输系数。拟议的超宽带 VNA 将使康奈尔大学和全球范围内的下一代无线通信和物联网的纳米电子材料和设备的研究成为可能。 220 GHz将作为太赫兹频率范围研究的基础，此外，拟议的VNA还将加强对量子计算器件、微机电传感器、生物传感器、高速集成电路、节能功率器件和传感器的研究。在 NSF 的 10 个重大想法中，拟议的 VNA 启用或增强的研究将影响未来工作、量子飞跃、理解生命规则和 Windows 的想法。拟议的 VNA 将成为康奈尔纳米设施 (CNF) 的一部分，该设施在提供高效纳米技术基础设施和专业知识以及运营和维护主要研究仪器方面拥有悠久而卓越的历史。是 NSF 支持的具有全国影响力的国家纳米技术协调基础设施的一部分，合作信件证明，全世界都对使用拟议的 VNA 感兴趣，其中包括来自主要研究型大学、传统黑人学院和大学的用户。 ,拟议的超宽带 VNA 将是世界上第一个，由 Anritsu 公司于去年宣布，并且基于新开发的 0.6 毫米直径。同轴元件，使得可以在 70 kHz 至 220 GHz 的频率范围内进行单次连续扫描，这与基于分段带宽高于 110 的波导的传统 VNA 有着根本的不同。因此，所提出的宽带 VNA 将实现增益压缩、幅相失真、谐波生成、互调、时域反射率、噪声等的大信号非线性测量。所提议的 VNA 将实现脉冲测量。 ，这对于未来的高功率设备至关重要，所提出的 VNA 可以通过频率扩展器进行改造，将其带宽扩展到 1.1 THz。”该奖项反映了 NSF 的法定使命，并被认为值得支持。通过使用基金会的智力优点和更广泛的影响审查标准进行评估。

项目成果

A D-band frequency-doubling distributed amplifier thorugh monolithic integration of SiC SIW and GaN HEMTs

通过 SiC SIW 和 GaN HEMT 单片集成的 D 频段倍频分布式放大器

• 发表时间: 2023-12
• 期刊: Dec. 2023
• 作者: Li, L.;Li, T.;Fay, P.;Hwang, J. C.
• 通讯作者: Hwang, J. C.

Sub-terahertz devices and test metrology

亚太赫兹设备和测试计量

• 发表时间: 2023-09
• 期刊: Sep. 2023
• 作者: Li, L.;Asadi, M. J.;Li, T.;Wang, X.;Hwang, J. C.
• 通讯作者: Hwang, J. C.

A compact F-band filter based on SiC substrate-integrated waveguides

基于 SiC 衬底集成波导的紧凑型 F 带滤波器

• 发表时间: 2023-12
• 期刊: Dec. 2023
• 作者: Wang, X.;Asadi, M. J.;Li, L.;Li, T.;Hwang, J. C.;Thome, F.;Brueckner, P.;Schwantuschke, D.
• 通讯作者: Schwantuschke, D.

Single-sweep vs. banded characterizations of a D-band ultra-low-loss SiC substrate integrated waveguide

D 波段超低损耗 SiC 衬底集成波导的单次扫描与带状表征

• 发表时间: 2022-06
• 期刊: USA
• 作者: Li, L.;Reyes, S.;Asadi, M. J.;Jena, D.;Xing, H. G.;Fay, P.;Hwang, J. C.
• 通讯作者: Hwang, J. C.

Extraordinary permittivity characterization of 4H SiC at millimeter-wave frequencies

毫米波频率下 4H SiC 的非凡介电常数表征

• DOI: 10.1063/5.0148623
• 发表时间: 2023-07
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Li, Lei;Reyes, Steve;Asadi, Mohammad Javad;Fay, Patrick;Hwang, James C.
• 通讯作者: Hwang, James C.