Scalable Manufacturing of Single Crystalline Halide Perovskite Film via Interface Engineering

通过界面工程大规模制造单晶卤化物钙钛矿薄膜

• 批准号: 2024972
• 负责人: Jian Shi
• 金额: $ 41.97万
• 依托单位: Rensselaer Polytechnic Institute
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2020
• 资助国家: 美国
• 起止时间: 2020-09-01 至 2024-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2024972&HistoricalAwards=false
• 关键词: Scalable; Manufacturing; Single; Crystalline; Halide

Epitaxy is a process of growing a material of a well-defined orientation on a host substrate and is critical to forming useful materials for the semiconductor-based microelectronics and renewable energy industries. This award supports research into remote epitaxy in which an epitaxial relation is established remotely between film and substrate though an intervening layer possessing a different structure and symmetry than present at the interface. Remote epitaxy potentially allows for the formation of thin films which can be removed from the host substrate and integrated into other systems increasing flexibility in the design of innovative semiconductor devices. This award looks to the use of a novel intervening layer of amorphous materials which would allow the scalable manufacturing of remote epitaxial films. The award supports research generating basic knowledge important to scalability including suppressing dislocations and grain boundaries critical to the subsequent applications. Wafer-scale single crystalline halide perovskite films are studied for emerging optoelectronics and electronics for energy and information applications. This award will benefit the U.S. economy and advance national prosperity by promoting the progress of science in advanced manufacturing within critical technologies. The award will also promote engineering research training of underrepresented groups and undergraduate/graduate engineering education.The award establishes the theoretical, computational, and experimental knowledge bases enabling defect-controlled wafer-scale epitaxial thin film growth. Iterative computational and experimental approaches are used to understand the atomic mechanisms controlling remote heteroepitaxy by tuning the film-substrate interaction through use of ultrathin amorphous buffer layers of controlled thickness and dielectric constant. Supported by molecular-level simulations and structural/chemical and optical/electrical characterization studies, a basic understanding is developed on the role of thickness, chemistry and dielectric properties of the amorphous buffer layer and lattice mismatch of substrate on strain, orientation, defects, morphology and optoelectronic/electronic property of remote epitaxial films. An interface engineering strategy to achieve defects-controlled wafer-scale transferable epitaxial thin film. The award will advance the fundamental knowledge of epitaxy science, interface engineering and optoelectronic property-structure relation of technologically important semiconducting halide perovskites for energy and electronic applications.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

外延是在主基板上生长具有明确方向的材料的过程，对于形成基于半导体的微电子和可再生能源行业的有用材料至关重要。该奖项支持远程外延的研究，其中通过具有与界面处不同的结构和对称性的中间层，在薄膜和基板之间远程建立外延关系。远程外延可能允许形成薄膜，这些薄膜可以从主基板上移除并集成到其他系统中，从而提高创新半导体器件设计的灵活性。该奖项着眼于使用新型非晶材料中间层，这将允许远程外延薄膜的可扩展制造。该奖项支持研究产生对可扩展性重要的基础知识，包括抑制对后续应用至关重要的位错和晶界。研究晶圆级单晶卤化物钙钛矿薄膜，用于能源和信息应用的新兴光电子学和电子学。该奖项将通过促进关键技术中先进制造业的科学进步，造福美国经济并促进国家繁荣。该奖项还将促进代表性不足群体的工程研究培训和本科生/研究生工程教育。该奖项建立了理论、计算和实验知识库，以实现缺陷控制的晶圆级外延薄膜生长。迭代计算和实验方法用于通过使用受控厚度和介电常数的超薄非晶缓冲层来调节薄膜-基板相互作用，从而了解控制远程异质外延的原子机制。在分子级模拟以及结构/化学和光学/电学表征研究的支持下，对非晶缓冲层的厚度、化学和介电特性以及基底的晶格失配对应变、取向、缺陷、形态的作用有了基本的了解以及远程外延薄膜的光电/电子特性。实现缺陷控制的晶圆级可转移外延薄膜的界面工程策略。该奖项将促进能源和电子应用中技术重要的半导体卤化物钙钛矿的外延科学、界面工程和光电性质-结构关系的基础知识。该奖项反映了 NSF 的法定使命，并通过使用基金会的智力评估进行评估，认为值得支持。优点和更广泛的影响审查标准。

项目成果

Giant pyroelectricity in nanomembranes

纳米膜中的巨大热释电

• DOI: 10.1038/s41586-022-04850-7
• 发表时间: 2022-07
• 期刊: Nature
• 影响因子: 64.8
• 作者: Jiang, Jie;Zhang, Lifu;Ming, Chen;Zhou, Hua;Bose, Pritom;Guo, Yuwei;Hu, Yang;Wang, Baiwei;Chen, Zhizhong;Jia, Ru;et al
• 通讯作者: et al

Composition gradient-enabled circular photogalvanic effect in inogranic halide perovskites

无机卤化物钙钛矿中成分梯度驱动的圆形光电效应

• DOI: 10.1063/5.0083187
• 发表时间: 2022-05-23
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Ru Jia;Jie Jiang;Lifu Zhang;Yang Hu;S. Pendse;Yuwei Guo;Jian Shi
• 通讯作者: Jian Shi

Metal–Insulator Transition of Single-Crystal V 2 O 3 through van der Waals Interface Engineering

通过范德华界面工程实现单晶 V 2 O 3 的金属-绝缘体转变

• DOI: 10.1021/acsnano.3c02649
• 发表时间: 2023-06
• 期刊: ACS Nano
• 影响因子: 17.1
• 作者: Jiang, Jie;Zhang, Lifu;Hu, Yang;Guo, Yuwei;Chen, Zhizhong;Jia, Ru;Pendse, Saloni;Xiang, Yu;Wang, Gwo;Shi, Yunfeng;et al
• 通讯作者: et al

Applicability of coherent x-ray diffractive imaging to ferroelectric, ferromagnetic, and phase change materials

相干 X 射线衍射成像对铁电、铁磁和相变材料的适用性

• DOI: 10.1063/5.0072399
• 发表时间: 2022-01
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: Shi, Xiaowen;Shi, Jian;Fohtung, Edwin
• 通讯作者: Fohtung, Edwin

Liquid-Phase van der Waals Epitaxy of a Few-Layer and Unit-Cell Thick Ruddlesden–Popper Halide Perovskite

几层单胞厚 Ruddlesden–Popper 卤化物钙钛矿的液相范德华外延

• DOI: 10.1021/jacs.2c07069
• 发表时间: 2022-09
• 期刊: Journal of the American Chemical Society
• 影响因子: 15
• 作者: Zhang, Lifu;Jiang, Jie;Hu, Yang;Lu, Zonghuan;Wen, Xixing;Pendse, Saloni;Jia, Ru;Wang, Gwo;Lu, Toh;Shi, Jian
• 通讯作者: Shi, Jian