Symmetry-protected spin dynamics in ferroelectric spin device

铁电自旋器件中对称保护的自旋动力学

• 批准号: 2031692
• 负责人: Jian Shi
• 金额: $ 35万
• 依托单位: Rensselaer Polytechnic Institute
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2020
• 资助国家: 美国
• 起止时间: 2020-09-15 至 2024-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2031692&HistoricalAwards=false
• 关键词: Symmetry; protected; spin; dynamics; ferroelectric; Symmetry; protected; spin; dynamics; ferroelectric

Award Title:Symmetry-protected spin dynamics in ferroelectric spin device (Proposal ID: 2031692)Non-technical Abstract:To boost the computing power of microelectronic systems, among many strategies such as device miniaturization, using non-charge-based logic operation and harnessing non-von Neumann architectures, computing with electron spin has been proposed as a promising solution. Spin devices such as spin field effect transistor are considered to have the potential to significantly advance computing performance and even transform current computing paradigms. In spin devices, control of electron spin – a computing process – is achieved by electric field-induced effective magnetic field in the hosting semiconductor. In most semiconductors, the magnetic field is multi-directional so coherent control of electron spin precession has been a challenge. In this project, the PI will address this issue by developing material/device systems that provide unidirectional magnetic field. In the proposed system, electric field stems from ferroelectric polarization and unidirectional magnetic field is a natural consequence of the unique symmetry of the proposed system. The nonvolatile electric field and the unidirectional magnetic field will make the proposed spin devices excel in spin control and power consumption. This award supports the fundamental research of understanding symmetry-spin dynamics relation in ferroelectric spin devices. The basic knowledge obtained from this project would help the realization of technologically practical spin field effect transistors. The results from this award will therefore benefit the U.S. economy by advancing technological progresses in the field of microelectronics. The award will also promote engineering education and research training of underrepresented groups. Technical Abstract:The research objective of this project is to understand the role of symmetry and the persistent spin helix on the spin dynamics in ferroelectric semiconductors with strong spin-orbit coupling for spintronic devices. While strong spin-orbit coupling enhances spin precession leading to short channel operation, it also simultaneously suppresses controllable spin transport. Such dilemma has been a major roadblock for realization of practical spintronic devices such as spin field effect transistors. In this project, by using semiconducting ferroelectric materials of selected symmetry with strong spin-orbit coupling, the PI expects to achieve symmetry-protected long-range coherent spin transport via persistent spin helix and switchable spin texture upon changing the ferroelectric polarization. To pursue these goals, the PI will grow high-quality single crystalline ferroelectric semiconductors carrying strong spin-orbit coupling, and fabricate ferroelectric spin valves and field effect transistors. The PI will investigate the spin-polarized band structure and persistent spin helix in the model materials. The PI will reveal the spin lifetime and spin diffusion length in ferroelectric spin valves and field effect transistors. The PI will also study the dynamics of ferroelectric domain structure and effect of ferroelectric domain orientation on persistent spin helix, spin dynamics, spin operation and diffusion. This proposed work will advance the fundamental knowledge needed in resolving the intrinsic dilemma issue between the precise manipulation and effective preservation of spin in spintronic systems with strong spin-orbit interaction.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

Award Title:Symmetry-protected spin dynamics in ferroelectric spin device (Proposal ID: 2031692)Non-technical Abstract:To boost the computing power of microelectronic systems, among many strategies such as device miniaturization, using non-charge-based logic operation and harnessing non-von Neumann architectures, computing with electron spin has been proposed as a promise solution.旋转设备（例如自旋场效应晶体管）被认为具有显着提高计算性能，甚至可以改变当前计算范例的潜力。在自旋设备中，电子自旋的控制 - 计算过程 - 通过电场诱导的宿主半导体有效磁场实现。在大多数半导体中，磁场是多方向的，因此对电子自旋预防的相干控制一直是一个挑战。在该项目中，PI将通过开发提供单向磁场的材料/设备系统来解决此问题。在拟议的系统中，铁电偏振和单向磁场的电场步骤是所提出系统独特对称性的自然结果。非挥发性电场和单向磁场将使拟议的自旋设备在自旋控制和功耗中表现出色。该奖项支持铁电旋转设备中理解对称自旋动力学关系的基本研究。从该项目获得的基本知识将有助于实现技术实用的自旋场效应晶体管。因此，该奖项的结果将通过在微电子学领域提高技术进步来使美国经济受益。该奖项还将促进代表性不足的团体的工程教育和研究培训。技术摘要：该项目的研究目标是了解对称性的作用和持续的自旋螺旋在铁电的旋转动力学上，用于旋转器件的旋转轨道耦合强的旋转动力学。尽管强大的自旋轨道耦合增强旋转预防导致短通道操作，但它也只是抑制了受控的自旋传输。这种困境一直是实现实际自旋设备（例如自旋场效应晶体管）的主要障碍。在这个项目中，通过使用与强旋转轨道耦合的选定对称性的半导体铁电材料，PI希望通过持续的自旋螺旋和可切换的自旋纹理实现对称性保护的长距离连贯的旋转转运，并在更改铁电偏置时实现。为了实现这些目标，PI将生长具有强旋轨耦合的高质量单晶铁电性半导体，并制造铁电自旋阀和田间效应晶体管。 PI将研究模型材料中的自旋极化带结构和持续的自旋螺旋。 PI将揭示铁电自旋阀和野外效应晶体管中的自旋寿命和自旋扩散长度。 PI还将研究铁电域结构的动力学以及铁电域取向对持续旋转螺旋，自旋动力学，自旋操作和扩散的影响。这项拟议的工作将促进解决具有较强的自旋轨道互动的旋转系统中的精确操纵和有效保留自旋的固有困境问题所需的基本知识。该奖项反映了NSF的法定任务，并被认为是通过基金会的知识分子和更广泛的影响来审查Criteria来通过评估来通过评估来获得支持的珍贵的。