GaN-Based Transistors with Trigate Architecture

具有三栅极架构的 GaN 晶体管

• 批准号: 243486436
• 负责人: Professor Dr. Oliver Ambacher
• 金额: --
• 依托单位: Fachgebiet Festkörperelektronik (FKE)
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2013
• 资助国家: 德国
• 起止时间: 2012-12-31 至 2016-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/243486436?language=en
• 关键词: GaN; Based; Transistors; Trigate; Architecture

GaN HEMTs (High Electron Mobility Transistor) have become popular devices recently, in particular for application in power switches and RF (Radio Frequency) power amplifiers. Power switches and RF amplifiers are key components for modern information and communication technology. The application of GaN transistors in these components offers many advantages and therefore the development of GaN transistors, in particular GaN HEMTs, is pushed forward aggressively. Most GaN HEMTs realized so far are dHEMTs (depletion HEMT) having a conducting channel at zero applied gate voltage. This seriously limits their potential application areas since frequently eHEMTs (enhancement HEMT) are needed that for zero gate voltage are switched off. The present project is focused on a new and promising transistor architecture, namely the trigate concept that became popular in silicon electronics quite recently. In the project, this concept will be adopted to GaN HEMTs and in-depth research on GaN trigate eHEMTs will be carried out. The three project partners with recognized expertise in transistor theory and GaN technology will conduct research on GaN trigate structures with special emphasis on GaN trigate eHEMTs for power switches and RF amplifiers. They will closely collaborate and - investigate the physics and operation of GaN trigate eHEMTs in detail,- elaborate suitable designs of such transistors for power switches and RF applications,- develop and establish a complete process flow for GaN trigate HEMTs, - fabricate GaN trigate eHEMTs and perform a thorough electrical characterization of these transistors,- assess the potential of the trigate concept for GaN.Extensive device simulations will be performed to get insights in the physics and operation of GaN trigate HEMTs. The obtained results serve as basis for elaborating suitable designs of trigate eHEMTs for power switches and RF applications. From the processing point of view, major challenges are the fabrication of the AlGaN/GaN bodies for trigate HEMTs by etching deep trenches, thereby avoiding the formation of defects at the body sidewalls, and the deposition of metals and dielectrics on the sidewalls. Key targets of the project are (i) the realization of GaN trigate eHEMTs that successfully compete with conventional GaN top-gate HEMTs, (ii) a significant enhancement of the state of knowledge on GaN trigate HEMTs, and (iii) a well-founded and critical assessment of the potential of these transistors.

Gan Hemts（高电子迁移率晶体管）最近已成为流行的设备，特别是用于在电源开关和RF（射频）功率放大器中应用。电源开关和RF放大器是现代信息和通信技术的关键组件。 GAN晶体管在这些组件中的应用提供了许多优势，因此，GAN晶体管的发展，尤其是Gan Hemts，被积极向前推动。到目前为止，大多数gan hemts是在零施加的栅极电压下具有导电通道的Dhemts（Deptetion Hemt）。这严重限制了其潜在的应用领域，因为需要频繁的eHemts（增强hemt），对于零门电压而言，要关闭零门电压。本项目的重点是一种新的晶体管建筑，即trige概念，该概念最近在硅电子产品中流行。 在该项目中，将对Gan Hemts采用此概念，并将对Gan Trigate Ehemts进行深入研究。具有公认的晶体管理论专业知识和GAN技术专业知识的三个项目合作伙伴将对GAN Trige结构进行研究，并特别强调了电源开关和RF放大器的Gan Trige Ehemts。他们将密切合作并 - 详细研究gan trige的物理和操作 - 详细阐述了用于电源开关和RF应用的此类晶体管的合适设计， - 为GAN Trigate Hemts开发和建立完整的过程流程， - 制造Gan Trigate Ehemts并对这些晶体管进行彻底的电气表征， - 评估将进行gan的托盘概念的潜在。获得的结果是详细阐述用于电源开关和RF应用程序的Trige Ehemts的合适设计的基础。从处理的角度来看，主要的挑战是通过蚀刻深沟的Algan/Gan体制造用于trige的hemt，从而避免了人体侧壁上的缺陷形成，以及在侧壁上的金属和二元素的沉积。该项目的主要目标是（i）实现了成功与传统的Gan Top-Gate Hemts竞争的Gan Trige Ehemts，（ii）对GAN Trige以及对这些晶体管潜力的批判性评估。

项目成果

Performance and parasitic analysis of sub-micron scaled tri-gate AlGaN/GaN HEMT design

亚微米级三栅 AlGaN/GaN HEMT 设计的性能和寄生分析

• DOI: 10.1109/eumic.2015.7345077
• 发表时间: 2015
• 期刊: 2015 10th European Microwave Integrated Circuits Conference (EuMIC)
• 作者: E. Ture;P. Brückner;F. V. Raay;M. Alsharef;R. Granzner;F. Schwierz;R. Quay;O. Ambacher
• 通讯作者: O. Ambacher

Design of GaN tri-gate HEMTs

GaN三栅HEMT的设计

• DOI: 10.1109/asdam.2014.6998657
• 发表时间: 2014
• 期刊: The Tenth International Conference on Advanced Semiconductor Devices and Microsystems
• 作者: M. Alsharef;R. Granzner;E. Ture;R. Quay;J. Racko;J. Breza;F. Schwierz
• 通讯作者: F. Schwierz

High-Current Submicrometer Tri-Gate GaN High-Electron Mobility Transistors With Binary and Quaternary Barriers

• DOI: 10.1109/jeds.2015.2503701
• 发表时间: 2016
• 期刊: IEEE Journal of the Electron Devices Society
• 影响因子: 2.3
• 作者: E. Ture;P. Bruckner;B. Godejohann;R. Aidam;M. Alsharef;R. Granzner;F. Schwierz;R. Quay;O. Ambacher

First demonstration of W-band Tri-gate GaN-HEMT power amplifier MMIC with 30 dBm output power

首次演示输出功率为 30 dBm 的 W 波段三栅极 GaN-HEMT 功率放大器 MMIC

• DOI: 10.1109/mwsym.2017.8058452
• 发表时间: 2017
• 期刊: 2017 IEEE MTT-S International Microwave Symposium (IMS)
• 作者: E. Ture;P. Brückner;R. Quay;M. Alsharef;R. Granzner;F. Schwierz;O. Ambacher
• 通讯作者: O. Ambacher

RF Performance of Trigate GaN HEMTs

• DOI: 10.1109/ted.2016.2606701
• 发表时间: 2016-09
• 期刊: IEEE Transactions on Electron Devices
• 影响因子: 3.1
• 作者: M. Alsharef;M. Christiansen;R. Granzner;E. Ture;R. Quay;O. Ambacher;F. Schwierz