Band Engineering for High Gain Digital III-V Avalanche Photodiodes

高增益数字 III-V 雪崩光电二极管的频带工程

• 批准号: 1936016
• 负责人: Avik Ghosh
• 金额: $ 50万
• 依托单位: University of Virginia Main Campus
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2019
• 资助国家: 美国
• 起止时间: 2019-09-15 至 2023-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1936016&HistoricalAwards=false
• 关键词: Band; Engineering; Gain; Digital; III

Nontechnical:Avalanche photodiodes (APDs) are widely used to convert optical data into electrical signal and can be used in a wide range of applications. These include optical fiber communication, medical spectroscopy, infrared sensing, and applications needing high gains and bandwidth such as quantum information networks. APDs provide very high sensitivity through internal gain and carrier multiplication in a region of high electric field in the device. This gain, however, comes at the cost of increased shot noise. The noise arises due to the pair creation by separate electron and hole currents that couple through a complex feedback mechanism. One way to limit the noise while preserving the gain is to constrain one type of carrier to a narrow bandwidth so that overall carrier multiplication stays primarily unipolar. This proposal focuses on band engineering of digital III-V heterostructures that can create minigaps selectively inside one band, thereby constraining the corresponding carrier energy and reducing shot noise. The PIs will undertake a detailed computational and experimental study of the materials physics and interface chemistry in APDs based on digital III-V alloys with high aluminum content. The successful fulfillment of the proposal will expand the materials genome of stable III-V alloys and set design rules for high gain photodiodes. These "designer" APDs will have ten to twenty times lower noise in the critical telecommunications spectrum of wavelengths from three to five microns and be capable of single photon detection. Investigators will incorporate results into upcoming courses and books. They will also recruit students and teachers from underrepresented groups through a variety of programs and fellowships. Results will be presented at conferences and meetings with industry and government members through affiliated cooperative research centers. They will also be incorporated into demonstrations at annual Montessori events for children.Technical:The proposal will lead to the fundamental study of band formation and orbital chemistry in III-V alloys, towards controlling carrier ionization coefficients, excess noise and overall optoelectronic device design and noise reduction of Avalanche Photo Diodes (APDs). The proposal will involve the development of multi-scale computational models for electronic and optical transport of III-V alloy APDs and creation of design rules for low noise APDs with high gain. Experiments will focus on fabrication and characterization of digital and random III-V APDs, with varying material composition, orientation, temperature, periodicity, and roughness profile, and measurements of their electronic and optical properties to confirm predictions from the theoretical study and isolate the effect of competing mechanisms. Armed with these results, a Separate Absorption Charge Multiplication (SACM) APD will be fabricated to combine the different alloying needs for absorption vs multiplication, as well as high-speed Modified Uni-Traveling Carrier (MUTC) photodiodes to explore carrier saturation velocity. The ultimate goal will be to show operation at 25 and 50 Gigabit per second, enabling high performance 100 and 400 Gigabits per second coarse Wavelet Division Multiplexing Ethernet. Improving the performance of APDs for photon detection will open up their use in a wide range of commercial, military and research applications.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术：雪崩光电二极管（APD）广泛用于将光数据转换为电信号，可用于广泛的应用。其中包括光纤通信、医学光谱、红外传感以及需要高增益和带宽的应用，例如量子信息网络。 APD 通过器件内高电场区域的内部增益和载流子倍增提供非常高的灵敏度。然而，这种增益是以增加散粒噪声为代价的。噪声的产生是由于通过复杂的反馈机制耦合的单独的电子和空穴电流形成对。在保持增益的同时限制噪声的一种方法是将一种类型的载波限制在较窄的带宽内，以便总体载波倍增主要保持单极性。该提案重点关注数字 III-V 异质结构的能带工程，该异质结构可以在一个能带内选择性地创建小能隙，从而限制相应的载流子能量并减少散粒噪声。 PI 将对基于高铝含量数字 III-V 合金的 APD 中的材料物理和界面化学进行详细的计算和实验研究。该提案的成功实施将扩大稳定III-V族合金的材料基因组，并为高增益光电二极管设定设计规则。这些“设计”APD 在波长为 3 至 5 微米的关键电信光谱中的噪声将降低 10 至 20 倍，并且能够进行单光子检测。研究人员将把结果纳入即将推出的课程和书籍中。他们还将通过各种计划和奖学金从代表性不足的群体中招募学生和教师。结果将通过附属合作研究中心在与行业和政府成员举行的会议上公布。它们还将被纳入年度蒙台梭利儿童活动的演示中。 技术：该提案将导致对 III-V 合金中能带形成和轨道化学的基础研究，以控制载流子电离系数、过量噪声和整体光电器件设计和雪崩光电二极管 (APD) 的降噪。该提案将涉及开发 III-V 族合金 APD 电子和光学传输的多尺度计算模型，以及创建高增益低噪声 APD 的设计规则。实验将重点关注具有不同材料成分、方向、温度、周期性和粗糙度轮廓的数字和随机 III-V APD 的制造和表征，以及对其电子和光学特性的测量，以确认理论研究的预测并隔离影响的竞争机制。有了这些结果，我们将制造一个单独的吸收电荷倍增 (SACM) APD，以结合吸收与倍增的不同合金化需求，以及高速改进的单行载流子 (MUTC) 光电二极管，以探索载流子饱和速度。最终目标是展示每秒 25 吉比特和 50 吉比特的运行速度，从而实现每秒 100 吉比特和 400 吉比特的高性能粗小波分复用以太网。 提高光子探测 APD 的性能将使其在商业、军事和研究应用中得到广泛应用。该奖项反映了 NSF 的法定使命，并通过使用基金会的智力价值和更广泛的影响审查标准进行评估，被认为值得支持。

项目成果

Temperature Dependence of Avalanche Breakdown of AlGaAsSb and AlInAsSb Avalanche Photodiodes

• DOI: 10.1109/jlt.2022.3185417
• 发表时间: 2022-09-01
• 期刊: JOURNAL OF LIGHTWAVE TECHNOLOGY
• 影响因子: 4.7
• 作者: Guo, Bingtian;Ahmed, Sheikh Z.;Campbell, Joe C.
• 通讯作者: Campbell, Joe C.

Design methodology of high-gain III-V digital alloy avalanche photodiodes

高增益III-V族数字合金雪崩光电二极管的设计方法

• DOI: 10.1117/12.2578959
• 发表时间: 2021
• 期刊: Proceedings of the SPIE
• 作者: Ahmed, Sheikh Z.;Zheng, Jiyuan;Tan, Yaohua;Campbell, Joe C.;Ghosh, Avik W.
• 通讯作者: Ghosh, Avik W.

Biaxial strain modulated valence-band engineering in III-V digital alloys

III-V 数字合金中的双轴应变调制价带工程

• DOI: 10.1103/physrevb.106.035301
• 发表时间: 2022
• 期刊: Physical Review B
• 影响因子: 3.7
• 作者: Ahmed, Sheikh Z.;Tan, Yaohua;Zheng, Jiyuan;Campbell, Joe C.;Ghosh, Avik W.
• 通讯作者: Ghosh, Avik W.

A Physics Based Multiscale Compact Model of p-i-n Avalanche Photodiodes

基于物理的 p-i-n 雪崩光电二极管多尺度紧凑模型

• DOI: 10.1109/jlt.2021.3068265
• 发表时间: 2021
• 期刊: Journal of Lightwave Technology
• 影响因子: 4.7
• 作者: Ahmed, Sheikh Z.;Ganguly, Samiran;Yuan, Yuan;Zheng, Jiyuan;Tan, Yaohua;Campbell, Joe C.;Ghosh, Avik W.
• 通讯作者: Ghosh, Avik W.

Ionization coefficients and excess noise characteristics of AlInAsSb on an InP substrate

• DOI: 10.1063/5.0165800
• 发表时间: 2023-09-25
• 期刊: APPLIED PHYSICS LETTERS
• 影响因子: 4
• 作者: Ronningen，T. J.;Kodati，S. H.;Krishna，S.
• 通讯作者: Krishna，S.