EAGER: Feasibility Study of Epitaxial Oxide Resistive Field Effect Transistor (EOR-FET)

EAGER：外延氧化物电阻场效应晶体管 (EOR-FET) 的可行性研究

基本信息

批准号：
1929118
负责人：
Ethan Ahn
金额：
$ 9.99万
依托单位：
University of Texas at San Antonio
依托单位国家：
美国
项目类别：
Standard Grant
财政年份：
2019
资助国家：
美国
起止时间：
2019-06-01 至 2020-12-31
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=1929118&HistoricalAwards=false
关键词：
EAGER Feasibility Study Epitaxial Oxide

项目摘要

The need to accelerate computing speed while maintaining the same or similar level of power consumption is one of the oldest and most challenging problems in microelectronics. In this EAGER project, an exploratory idea of using epitaxial perovskite oxide heterostructure is investigated as a novel platform for high performance, energy-efficient computing. The approaches developed in this proposal are creative and original because although there have been many research and development efforts on the new logic devices, there is minimal work on how oxide thin films can lead the way to better computing. Thus, if successful, this research will lead researchers to rethink the role of oxides in computing devices and ultimately contribute to tackling today's most significant computing challenge. In this project, an innovative device solution is introduced by synergistically combining multiple disciplines in advanced materials. The primary educational goal of this project is to directly integrate the state-of-the-art research outcome into the curriculum of UTSA, which is a research-intensive, Hispanic-serving institution. An educational barrier that has existed as a great challenge in training underrepresented minority students with project-based research is expected to be overcome by developing the virtual laboratory environment. The specific research objective of this proposal is to determine the best ways of constructing the electrostrictive field-effect transistor (FET) device structure and understand the main factors that contribute to its superior device performance in terms of speed, power, and reliability. Based on preliminary data, the central hypothesis is that the epitaxial oxide heterostructure, prepared by the advanced oxide-MBE (molecular beam epitaxy) technique, will achieve maximum strain transfer from the top piezoelectric gate oxide layer to the bottom memristive channel layer, thereby leading to successful demonstration of the electrostrictive FET. To test feasibility of such a novel device structure, both the theoretical and experimental approaches will be adopted to investigate each oxide layer as key components of the high-speed, low-power logic device. This research will enhance a fundamental understanding of how a piezoelectric material can be best matched with a channel material for maximum electrostrictive FET device performance. The proposed work is of great intellectual significance because ultimately, it will provide a right insight on how this innovative technology will be positioned as the next-generation logic as benchmarked with other existing or emerging device candidates.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

在保持相同或相似的功耗水平的同时，需要加速计算速度，这是微电子学中最古老，最具挑战性的问题之一。在这个渴望的项目中，研究了使用外延钙钛矿异质结构的探索性思想，作为高性能，节能计算的新型平台。该提案中开发的方法具有创造力和原创性，因为尽管在新的逻辑设备上进行了许多研发工作，但关于氧化物薄膜如何能够为更好的计算带来的道路的工作最少。因此，如果成功的话，这项研究将导致研究人员重新考虑氧化物在计算设备中的作用，并最终有助于应对当今最重要的计算挑战。在该项目中，通过协同结合高级材料中的多个学科来引入创新的设备解决方案。该项目的主要教育目标是将最先进的研究成果直接整合到UTSA的课程中，UTSA是一个研究密集型，西班牙裔服务机构。在培训代表性不足的少数族裔学生中，具有基于项目的研究的培训的教育障碍将通过开发虚拟实验室环境来克服。该提案的具体研究目标是确定构建电纵横动态晶体管晶体管（FET）设备结构的最佳方法，并了解在速度，功率和可靠性方面有助于其卓越设备性能的主要因素。基于初步数据，中央假设是由晚期氧化物 - 莫贝（分子束外延）技术制备的外两次氧化物异质结构将达到从顶部压电氧化物氧化物层到底部的回忆通道层的最大应变转移成功地证明了电纵横动物的FET。为了测试这种新型设备结构的可行性，将采用理论和实验方法来研究每个氧化物层作为高速，低功率逻辑设备的关键组成部分。这项研究将增强对压电材料如何最好与通道材料相匹配的基本了解，以最大程度地图式FET设备性能。拟议的工作具有很大的智力意义，因为最终，它将提供正确的见解，以了解如何将这种创新技术定位为与其他现有或新兴的设备候选者标记为下一代逻辑。这奖反映了NSF的法定任务，并且已经取代了NSF的法定任务认为值得通过基金会的智力优点和更广泛影响的评论标准来评估值得支持。