RAISE-TAQS: Integrated Room Temperature Single-Photon based Quantum-Secure LiFi Systems
RAISE-TAQS:集成室温单光子量子安全 LiFi 系统
基本信息
- 批准号:1839196
- 负责人:
- 金额:$ 100万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2018
- 资助国家:美国
- 起止时间:2018-12-01 至 2023-11-30
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Gallium Nitride based LEDs have revolutionized solid-state lighting. Because unlike incandescent bulbs, LEDs can be switched and modulated at GHz frequencies, they are enabling light fidelity (LiFi) as a means of point to point communications using visible light in free space. LiFi is similar to WiFi, but its penetration is expected to rival, or exceed WiFi as GaN LEDs replace residential, industrial, street, and automotive lighting. Making free- space LiFi communication secure in the quantum sense in the future is both a timely opportunity, and of paramount technological importance. Secure communication systems are possible using the quantum properties of single-photons that prevent eavesdropping, and guarantee security. A successful demonstration of the devices and systems proposed in this research would not just enhance security in the rapidly emerging LiFi networks but also make quantum technologies come out from the research labs and reach people's houses. The proposed research is therefore highly transformative. In addition, the strong emphasis on material and device physics, optical and quantum sciences, and communication networks will all provide a rich set of areas for exploration and graduate student research. Technical: The PIs of this proposal have discovered single photon sources in wide-bandgap nitrides that are 20x brighter than the NV centers in diamond, and importantly, operate at room temperature. They have developed a fundamentally new structure for nitride LEDs using buried tunnel junctions, with which it becomes possible to electrically pump the single photon emitter. The engineering-led goals of the proposed project are threefold: (a) To build the first room-temperature electrically pumped on-demand single photon source completely integrated on the GaN material system, (b) To design and characterize the spectral properties, bandwidth, efficiency, packing density, and potential entanglement properties of the nitride single photon sources, and (c) To theoretically and experimentally identify and test the fundamental requirements, and limits of quantum-secure LiFi communication systems. This project explores and exploits the physics of single photon emitters, advances in quantum materials, and secure LiFi systems design and engineering, leading to the implementation quantum Lifi in a practical way. Every step in this quest will accelerate the development and deployment of quantum technologies. The team will systematically explore the basic physics of h-BN quantum emitters and III-nitride quantum dots, their emission rates and wavelengths, and how we can create these emitters deterministically. The Pis seek to discover how to integrate bright III-nitride LED structures with quantum emitters and efficiently gather the quantum and classical light in separate channels. Finally, they will engineer these devices in a real-world context and deploy them to ensure private communications guaranteed by the laws of quantum physics. New nitride quantum crystalline materials are key to this proposal. A meaningful international collaboration is proposed with a leading nitride materials group in the world will offer some of the highest quality gallium nitride crystals in the world.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
基于氮化镓的 LED 彻底改变了固态照明。由于与白炽灯泡不同,LED 可以在 GHz 频率下进行开关和调制,因此它们可以实现光保真度 (LiFi) 作为在自由空间中使用可见光进行点对点通信的手段。 LiFi 与 WiFi 类似,但随着 GaN LED 取代住宅、工业、街道和汽车照明,其渗透率预计将与 WiFi 相媲美或超过 WiFi。未来确保自由空间 LiFi 通信在量子意义上的安全不仅是一个及时的机遇,而且具有至关重要的技术重要性。利用单光子的量子特性可以防止窃听并保证安全,从而实现安全通信系统。本研究中提出的设备和系统的成功演示不仅可以增强快速新兴的 LiFi 网络的安全性,还可以使量子技术走出研究实验室并走进千家万户。因此,拟议的研究具有高度变革性。此外,对材料和器件物理、光学和量子科学以及通信网络的高度重视都将为探索和研究生研究提供丰富的领域。技术:该提案的 PI 发现了宽带隙氮化物中的单光子源,其亮度比金刚石中的 NV 中心亮 20 倍,而且重要的是,它可以在室温下运行。他们使用埋入隧道结开发了一种全新的氮化物 LED 结构,通过这种结构可以电泵浦单光子发射器。该项目以工程为主导的目标有三个:(a) 构建第一个完全集成在 GaN 材料系统上的室温电泵按需单光子源,(b) 设计和表征光谱特性、带宽、氮化物单光子源的效率、堆积密度和潜在纠缠特性,以及 (c) 从理论上和实验上确定和测试量子安全 LiFi 通信系统的基本要求和限制。该项目探索和利用单光子发射器的物理原理、量子材料的进步以及安全的 LiFi 系统设计和工程,从而以实用的方式实现量子 Lifi。这一探索的每一步都将加速量子技术的开发和部署。该团队将系统地探索 h-BN 量子发射器和 III 族氮化物量子点的基础物理、它们的发射速率和波长,以及我们如何确定性地创建这些发射器。 Pis 致力于探索如何将明亮的 III 族氮化物 LED 结构与量子发射器集成,并在不同的通道中有效地收集量子光和经典光。最后,他们将在现实世界中设计这些设备并部署它们,以确保量子物理定律保证私人通信。新型氮化物量子晶体材料是该提案的关键。提议与世界领先的氮化物材料集团进行有意义的国际合作,将提供世界上一些最高质量的氮化镓晶体。该奖项反映了 NSF 的法定使命,并通过使用基金会的智力优势和技术进行评估,被认为值得支持。更广泛的影响审查标准。
项目成果
期刊论文数量(13)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
High Internal Quantum Efficiency from AlGaN-delta-GaN Quantum Well at 260 nm
AlGaN-delta-GaN 量子阱在 260 nm 处具有高内部量子效率
- DOI:10.1364/cleo_at.2020.af1i.2
- 发表时间:2020-01
- 期刊:
- 影响因子:0
- 作者:Liu, Cheng;Lee, Kevin;Harden, Galen;Hoffman, Anthony;Xing, Huili;Jena, Debdeep;Zhang, Jing
- 通讯作者:Zhang, Jing
Rotationally aligned hexagonal boron nitride on sapphire by high-temperature molecular beam epitaxy
通过高温分子束外延在蓝宝石上旋转排列的六方氮化硼
- DOI:10.1103/physrevmaterials.3.064001
- 发表时间:2019-06-04
- 期刊:
- 影响因子:3.4
- 作者:R. Page;Yongjin Cho;J. Casamento;S. Rouvimov;H. Xing;D. Jena
- 通讯作者:D. Jena
Blue (In,Ga)N light-emitting diodes with buried n + – p + tunnel junctions by plasma-assisted molecular beam epitaxy
等离子体辅助分子束外延法制备具有掩埋n-p隧道结的蓝色(In,Ga)N发光二极管
- DOI:10.7567/1347-4065/ab1e78
- 发表时间:2019-06
- 期刊:
- 影响因子:1.5
- 作者:Cho, YongJin;Bharadwaj, Shyam;Hu, Zongyang;Nomoto, Kazuki;Jahn, Uwe;Xing, Huili Grace;Jena, Debdeep
- 通讯作者:Jena, Debdeep
Room temperature optically detected magnetic resonance of single spins in GaN
室温光学检测 GaN 单自旋磁共振
- DOI:10.1038/s41563-024-01803-5
- 发表时间:2024-02
- 期刊:
- 影响因子:41.2
- 作者:Luo, Jialun;Geng, Yifei;Rana, Farhan;Fuchs, Gregory D.
- 通讯作者:Fuchs, Gregory D.
Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes
增强底部隧道结发光二极管的注入效率和光输出
- DOI:10.1364/oe.384021
- 发表时间:2020-02
- 期刊:
- 影响因子:3.8
- 作者:Bharadwaj, Shyam;Miller, Jeffrey;Lee, Kevin;Lederman, Joshua;Siekacz, Marcin;Xing, Huili;Jena, Debdeep;Skierbiszewski, Czesław;Turski, Henryk
- 通讯作者:Turski, Henryk
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Debdeep Jena其他文献
Dualtronics: leveraging both faces of polar semiconductors
双电子学:利用极性半导体的两面
- DOI:
10.1186/s11671-022-03713-4 - 发表时间:
2022-08-11 - 期刊:
- 影响因子:0
- 作者:
Len van Deurzen;Eungkyun Kim;Naomi Pieczulewski;Zexuan Zhang;A. Feduniewicz;M. Chlipała;M. Siekacz;David Muller;H. Xing;Debdeep Jena;H. Turski - 通讯作者:
H. Turski
スパッタアニールAlN上GaN/AlN 2次元正孔ガス構造の電気特性評価と微細構造解析
溅射退火AlN上GaN/AlN二维空穴气体结构的电性能评估和微观结构分析
- DOI:
- 发表时间:
2022 - 期刊:
- 影响因子:0
- 作者:
西村 海音;中西 悠太;林 侑介;藤平 哲也;Chaudhuri Reet;Cho Yongjin;Xing Huili (Grace);Debdeep Jena;上杉 謙次郎;三宅 秀人;酒井 朗 - 通讯作者:
酒井 朗
Growth, catalysis, and faceting of α-Ga2O3 and α-(InxGa1−x)2O3 on m-plane α-Al2O3 by molecular beam epitaxy
分子束外延法在 m 面 α-Al2O3 上生长、催化和面对 α-Ga2O3 和 α-(InxGa1−x)2O3
- DOI:
- 发表时间:
2023 - 期刊:
- 影响因子:6.1
- 作者:
Martin S. Williams;M. Alonso;M. Schowalter;A. Karg;Sushma Raghuvansy;Jon P. McCandless;Debdeep Jena;A. Rosenauer;Martin Eickhoff;Patrick Vogt - 通讯作者:
Patrick Vogt
Design and Implementation of an AlScN-Based FeMEMS Multiplier for In-Memory Computing Applications
用于内存计算应用的基于 AlScN 的 FeMEMS 乘法器的设计和实现
- DOI:
- 发表时间:
2023 - 期刊:
- 影响因子:0
- 作者:
S. Jadhav;V. Gund;Madhav Ramesh;Debdeep Jena;Amit Lal - 通讯作者:
Amit Lal
Tight-binding band structure of β- and α-phase Ga2O3 and Al2O3
β相和α相Ga2O3和Al2O3的紧结合能带结构
- DOI:
10.1063/5.0074598 - 发表时间:
2021-11-06 - 期刊:
- 影响因子:3.2
- 作者:
Yifan Zhang;Mengren Liu;G. Khalsa;Debdeep Jena - 通讯作者:
Debdeep Jena
Debdeep Jena的其他文献
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{{ truncateString('Debdeep Jena', 18)}}的其他基金
I-Corps: Aluminum Nitride-based Power Transistors
I-Corps:氮化铝基功率晶体管
- 批准号:
1933825 - 财政年份:2019
- 资助金额:
$ 100万 - 项目类别:
Standard Grant
EFRI NewLAW: Non-Reciprocal Wave Propagation Devices by Fermionic Emulation and Exceptional Point Physics
EFRI NewLAW:通过费米子仿真和异常点物理实现非互易波传播装置
- 批准号:
1741694 - 财政年份:2017
- 资助金额:
$ 100万 - 项目类别:
Continuing Grant
Polarization-Driven Electron-Hole Bilayers in Quantum Wells
量子阱中偏振驱动的电子空穴双层
- 批准号:
1710298 - 财政年份:2017
- 资助金额:
$ 100万 - 项目类别:
Continuing Grant
DMREF: Collaborative Research: Extreme Bandgap Semiconductors
DMREF:协作研究:极限带隙半导体
- 批准号:
1534303 - 财政年份:2015
- 资助金额:
$ 100万 - 项目类别:
Standard Grant
2D Crystal Semiconductors: Electron Transport and Device Applications
2D 晶体半导体:电子传输和器件应用
- 批准号:
1523356 - 财政年份:2015
- 资助金额:
$ 100万 - 项目类别:
Standard Grant
2D Crystal Semiconductors: Electron Transport and Device Applications
2D 晶体半导体:电子传输和器件应用
- 批准号:
1232191 - 财政年份:2012
- 资助金额:
$ 100万 - 项目类别:
Standard Grant
Nanoscale Optoelectronics with Polarization and Bandgap Engineered Nitride Nanowire/Silicon Heterostructures
具有偏振和带隙工程氮化物纳米线/硅异质结构的纳米级光电器件
- 批准号:
0907583 - 财政年份:2009
- 资助金额:
$ 100万 - 项目类别:
Standard Grant
Evaluation of Graphene Nanoribbons for Lateral Bandgap Engineered Devices
用于横向带隙工程器件的石墨烯纳米带的评估
- 批准号:
0802125 - 财政年份:2008
- 资助金额:
$ 100万 - 项目类别:
Standard Grant
CAREER: Dielectric Engineering of Quantum Wire Solids: Fundamentals to Applications
职业:量子线固体的介电工程:应用基础
- 批准号:
0645698 - 财政年份:2007
- 资助金额:
$ 100万 - 项目类别:
Continuing Grant
相似国自然基金
北半球历史生物地理学问题探讨:基于RAD taqs方法的紫荆属亲缘地理学研究
- 批准号:31470312
- 批准年份:2014
- 资助金额:85.0 万元
- 项目类别:面上项目
相似海外基金
RAISE: TAQS: On-Chip Entanglement, Preparation, Manipulation, and Detection for Integrated All Quantum Information Processing
RAISE:TAQS:用于集成全量子信息处理的片上纠缠、准备、操纵和检测
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RAISE-TAQS: Integrated Photonics for Quantum Interfaces of Atoms, Molecules, and Light
RAISE-TAQS:原子、分子和光量子界面的集成光子学
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RAISE-TAQS: Photon-Number-Resolving Integrated Avalanche Photodiodes for Scalable Quantum Computing
RAISE-TAQS:用于可扩展量子计算的光子数解析集成雪崩光电二极管
- 批准号:
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RAISE-TAQS: Integrated Circuits of Single-Photon Sources from Organic Color-Centers
RAISE-TAQS:有机色心单光子源集成电路
- 批准号:
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- 资助金额:
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