Design and growth of high entropy oxides with tailored ionic dynamics for memory and computing applications

为内存和计算应用设计和生长具有定制离子动力学的高熵氧化物

• 批准号: 1810119
• 负责人: Wei Lu
• 金额: $ 42.5万
• 依托单位: Regents of the University of Michigan - Ann Arbor
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2018
• 资助国家: 美国
• 起止时间: 2018-07-15 至 2022-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1810119&HistoricalAwards=false
• 关键词: Design; growth; entropy; oxides; tailored

Nontechnical Description: New materials that offer tailored electronic as well as ionic characteristics can fundamentally impact how electronic devices and circuits are designed and built. This project brings together both experimentalists and theorists to explore a new class of oxide material that offers well-controlled coupled electronic/ionic effects for the development of new memory and logic devices. Through fundamental theory analysis and experimental innovations, materials that do not exist naturally can be systematically designed, synthesized and utilized. The techniques developed in this project offer new toolboxes for fundamental materials design and research, and enable new device applications. This project provides comprehensive educational and training opportunities for graduate students and undergraduates. The team plans to incorporate knowledge and techniques developed during research into core technical courses in materials science and electrical engineering disciplines, and disseminate research results to the general public through publications, summer camps, class visits and online exhibits. Technical Description: Previous studies on resistive switching memory devices are limited by oxide materials that are currently available. In this project, the team proposes to significantly broaden the parameter space of candidate materials that can lead to new material compositions and optimized device performance, by taking advantage of the concept that entropy can be used to stabilize new oxide phases. The multidiscipline team offers complementary expertise in theory, materials science, film growth and device engineering and aims to perform systematic study on high-entropy oxides and their applications in emerging electronic devices. The theoretical studies, including design of the high-entropy oxides with desired composition and stoichiometry, prediction of the kinetic (ionic hopping energy barrier and hopping distance) and thermodynamic (oxygen vacancy charge state) parameters, and transport and device-level modeling, provides guidance for the tightly integrated experimental studies including systematic materials synthesis, characterizations and device demonstrations and measurements to extract the relevant material parameters and verify the device performance. The synergistic co-development of these tasks not only enhances the likelihood of success of the proposed project, but also builds the foundation for other tasks where new, engineered materials can be developed.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术描述：提供量身定制的电子以及离子特性的新材料从根本上影响电子设备和电路的设计和构建方式。该项目汇集了实验家和理论家探索新的氧化物材料，这些氧化物材料提供了良好控制的电子/离子/离子效应，以开发新的记忆和逻辑设备。通过基本理论分析和实验创新，自然存在的材料可以系统地设计，合成和利用。 该项目开发的技术为基本材料设计和研究提供了新的工具箱，并启用了新的设备应用程序。该项目为研究生和本科生提供了全面的教育和培训机会。该团队计划在研究材料科学和电气工程学科的核心技术课程研究期间纳入知识和技术，并通过出版物，夏令营，班级访问和在线展览向公众传播研究结果。技术描述：先前关于电阻开关存储器设备的研究受到当前可用的氧化物材料的限制。在这个项目中，团队建议通过利用熵可用于稳定新的氧化物阶段的概念来显着拓宽候选材料的参数空间，这些候选材料的参数空间和优化的设备性能。多学科团队在理论，材料科学，电影增长和设备工程方面提供了互补的专业知识，并旨在对高渗透氧化物进行系统研究及其在新兴电子设备中的应用。理论研究，包括具有所需组成和化学计量的高渗透氧化物的设计，动力学的预测（离子跳跃能量屏障和跳跃距离）以及热力学（氧气空位荷兰）参数，以及运输和设备水平的建模，以实验性的构图和设备的构图指导，包括实验性的材料和设备的构图，并具有构图的指导，并为象征作用，并提供了构图，并具有系统的构图，并为构图的构图和设备构图，并提供了特征化的构图，并提供了特征，并提供了构图，并提供了构图，并提供了特征化的材料，并提供了特征，并提供了特征，并提供了特征，并提供了特征的构图，并提供指导。参数并验证设备性能。这些任务的协同共同开发不仅增强了拟议项目成功的可能性，而且还为可以开发新的，工程材料的新任务建立了基础。该奖项反映了NSF的法定任务，并认为通过使用基金会的知识和更广泛的影响来评估Criteria的评估，并被视为值得通过评估的支持。

项目成果

Nanoionic Resistive‐Switching Devices

• DOI: 10.1002/aelm.201900184
• 发表时间: 2019-05
• 期刊: Advanced Electronic Materials
• 影响因子: 6.2
• 作者: Xiaojian Zhu;Seung Hwan Lee;W. Lu

Thermal conductivity of rutile germanium dioxide

• DOI: 10.1063/5.0011358
• 发表时间: 2020-09
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: S. Chae;K. Mengle;R. Lu;A. Olvera;N. Sanders;J. Lee;P. Poudeu;J. Heron;E. Kioupakis

Charge Transition of Oxygen Vacancies during Resistive Switching in Oxide-Based RRAM

• DOI: 10.1021/acsami.8b18386
• 发表时间: 2019-03-27
• 期刊: ACS APPLIED MATERIALS & INTERFACES
• 影响因子: 9.5
• 作者: Lee, Jihang;Schell, William;Lu, Wei D.
• 通讯作者: Lu, Wei D.

Tuning Resistive Switching Behavior by Controlling Internal Ionic Dynamics for Biorealistic Implementation of Synaptic Plasticity

• DOI: 10.1002/aelm.202101025
• 发表时间: 2022-02
• 期刊: Advanced Electronic Materials
• 影响因子: 6.2
• 作者: Sangmin Yoo;Yuting Wu;Yongmo Park;Wei D. Lu

Nanoscale resistive switching devices for memory and computing applications

• DOI: 10.1007/s12274-020-2616-0
• 发表时间: 2020-01-17
• 期刊: NANO RESEARCH
• 影响因子: 9.9
• 作者: Lee, Seung Hwan;Zhu, Xiaojian;Lu, Wei D.
• 通讯作者: Lu, Wei D.