Collaborative Research: Carrier dispersion and Nontrivial Topological Phases in Ultra-Low Bandgap Metamorphic InAsSb Ordered Alloys

合作研究：超低带隙变质 InAsSb 有序合金中的载流子色散和非平凡拓扑相

• 批准号: 1809708
• 负责人: Sergey Suchalkin
• 金额: $ 28.79万
• 依托单位: SUNY at Stony Brook
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2018
• 资助国家: 美国
• 起止时间: 2018-08-15 至 2021-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1809708&HistoricalAwards=false
• 关键词: Collaborative; Research; Carrier; dispersion; Nontrivial

Semiconductors suitable for the development of infrared opto-electronic devices attract attention of physicists and engineers for many years. Metamorphic molecular beam epitaxy, a novel technology for material development, produces high quality compounds with precise control of their composition (indium, arsenic, aluminum and antimony) over a wide range of atomic concentrations. This ability allows deep studies of the "quantum" properties of important narrow-band semiconductors that are protected against material imperfections. These properties may have profound implication for the performance of a variety of devices including quantum computers. In this project the interdisciplinary research team from Stony Brook University and Georgia Institute of Technology plans to use novel materials for experimental demonstration of intriguing features of quantum physics. The efforts combine development of new materials and study of their physical properties and energy spectra by a variety of advanced experimental techniques. The project also provides for synergetic training of graduate students in physics, material science, and engineering, creating research opportunities for undergraduate students. The K-12 education component aims at cultivating an early-stage awareness of using new materials and technologies to improve the device performance without compromising the quality of human life.This project is to carry out epitaxial growth of high-quality indium arsenide antimonide (InAsSb) alloys with controllable nanoscale ordering and to investigate the manifestations of the new topologically nontrivial phases in these materials. The material growth is based on a recently developed virtual substrate approach, which lifts the constraint from the substrate lattice constant. The physical properties of the InAsSb ordered alloys can then be controlled to an exceptional degree, via varying the lattice constant, the strain, the alloy composition, and the composition modulation period. With these new materials, the research team intends to answer the following fundamental questions. (1) Can nontrivial topological phases be realized and observed in metamorphic InAsSb alloys with nanoscale ordering and tunable bandgap? (2) Can the InAsSb ordered alloys be a new platform for demonstration of Majorana zero mode? These topics are of great fundamental and technological interest, particularly for the solid-state realization of topological quantum computing. The technical approaches of the project include band structure calculation, advanced epitaxial growth, and cutting-edge characterization methods. The latter features transmission electron microscopy, high-resolution x-ray diffraction, reciprocal space mapping, infrared spectroscopy in high magnetic fields, and angle-resolved photoemission spectroscopy. Graduate and undergraduate students participating in the project have unique opportunities to master these methods and engage in all stages of the material development process.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

适合开发红外光电器件的半导体多年来一直受到物理学家和工程师的关注。变质分子束外延是一种新型材料开发技术，可生产高质量化合物，并在各种原子浓度范围内精确控制其成分（铟、砷、铝和锑）。这种能力允许深入研究重要窄带半导体的“量子”特性，这些半导体可以防止材料缺陷。这些特性可能对包括量子计算机在内的各种设备的性能产生深远的影响。在这个项目中，石溪大学和佐治亚理工学院的跨学科研究团队计划使用新型材料来实验演示量子物理学的有趣特征。这些努力将新材料的开发和通过各种先进实验技术对其物理性质和能谱的研究结合起来。该项目还为物理学、材料科学和工程领域的研究生提供协同培训，为本科生创造研究机会。 K-12教育部分旨在培养使用新材料和新技术的早期意识，以在不影响人类生活质量的情况下提高器件性能。该项目旨在进行高质量砷化锑化铟（InAsSb）的外延生长）具有可控纳米级有序性的合金，并研究这些材料中新的拓扑非平凡相的表现。材料生长基于最近开发的虚拟衬底方法，该方法解除了衬底晶格常数的限制。通过改变晶格常数、应变、合金成分和成分调制周期，可以将 InAsSb 有序合金的物理性能控制到特殊程度。通过这些新材料，研究小组打算回答以下基本问题。 (1) 能否在具有纳米级有序性和可调谐带隙的变质 InAsSb 合金中实现和观察到非平凡的拓扑相？ （2）InAsSb有序合金能否成为马约拉纳零模演示的新平台？这些主题具有重大的基础和技术意义，特别是对于拓扑量子计算的固态实现。该项目的技术方法包括能带结构计算、先进外延生长和前沿表征方法。后者具有透射电子显微镜、高分辨率 X 射线衍射、倒易空间映射、强磁场中的红外光谱和角分辨光电子能谱。参与该项目的研究生和本科生有独特的机会来掌握这些方法并参与材料开发过程的各个阶段。该奖项反映了 NSF 的法定使命，并通过使用基金会的智力价值和更广泛的影响审查进行评估，被认为值得支持标准。