EAGER: Black Phosphorus For Tunable Wide Bandwidth Sensor Arrays

EAGER：用于可调谐宽带传感器阵列的黑磷

• 批准号: 1753933
• 负责人: Anupama Kaul
• 金额: $ 23.27万
• 依托单位: University of North Texas
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2017
• 资助国家: 美国
• 起止时间: 2017-07-01 至 2022-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1753933&HistoricalAwards=false
• 关键词: EAGER; Black; Phosphorus; Tunable; Wide

Abstract: Black Phosphorus for Tunable Wide-bandwidth Sensor ArraysNanocarbons have captured the attention of researchers over the past several decades with materials such as buckeyballs, carbon nanotubes, carbon nanofibers and graphene. This rich variety of nanocarbon choices is possible due to the diverse crystalline structures of nancarbons, one form of which is two-dimensional (2D) graphene, a layered material. Two-dimensional graphene has enabled researchers to explore other 2D layered materials, such as the transition metal dichalcogenides, a wide variety of oxides and nitrides and clays. A recent addition to the suite of materials beyond carbon is phosphorus which also shows great diversity in its structures in the solid state, ranging from orthorhombic black phosphorus, cubic white phosphorus, monoclinic violet phosphorus, fibrous red phosphorus and amorphous red phosphorus. Recently, a great deal of attention has been paid to the layered form of phosphorus, specifically black phosphorus which has a unique puckered honeycomb lattice. However, unlike graphite, black phosphorus is a direct band semiconductor in the bulk making it an attractive material for optoelectronics and sensing applications. The focus of the work proposed here is to understand the intriguing electronic and optoelectronic properties of black phosphorous and to develop novel optoelectronic sensing devices from this material. Black phosphorus has a narrow direct band gap of 0.3 eV in the bulk, unlike most of the transition metal dichalcogenides which have much higher, indirect band gaps, suggesting that black phosphorus has prospects for sensing and detector applications targeted for the near IR and mid-IR regimes. Moreover, the band gap of black phosphorus can be engineered through control of layer thickness; the band gap increases with decreasing layer number, reaching 2 eV for single layer phosphorene. Therefore, engineering the layer number in arrays of black phosphorus devices with varying layer number should enable photo-detection over a broad spectral range. We will utilize the exotic properties of black phosphorus and integrate this novel material with molybdenum disulphide (MoS2) to demonstrate high performance tunable sensor arrays operational over a wide spectral regime from the visible to the infrared (IR). The novel features of this proposal are to capitalize on the tunable band gap properties of black phosphorus, the high mobility of its carriers to enable fast response time detectors, and at the same time, the atomically sharp interfaces between two-dimensional (2D) van der Waals heterostructures should yield ultra-sensitive detectors by reducing dark currents that plague the performance of doped-graded junctions.

摘要：用于可调宽带宽带传感器阵列的黑磷在过去的几十年中，用七叶树，碳纳米管，碳纳米纤维和石墨烯引起了研究人员的注意。 由于南卡伯氏菌的各种晶体结构，一种富含的纳米碳选择可以选择，其中一种形式是二维（2D）石墨烯，一种分层材料。二维石墨烯使研究人员能够探索其他2D层次材料，例如过渡金属二进制基因源，多种氧化物以及氮化物和粘土。 最近的材料套件以外的碳套件是磷，它在固态的结构上也显示出巨大的多样性，范围从原骨黑磷，立方白磷，单斜紫罗兰磷，纤维红色磷和无斑磷磷。最近，对磷的分层形式引起了极大的关注，特别是黑磷，它具有独特的冰棍蜂窝状晶格。但是，与石墨不同，黑磷是散装中的直接带半导体，使其成为光电和传感应用的吸引人材料。 这里提出的工作的重点是了解黑磷的有趣的电子和光电特性，并从该材料中开发新型的光电传感设备。与大多数过渡金属二进制基因源具有较高的间接带隙，黑色磷在散装中的狭窄直接带隙为0.3 eV，这表明黑磷具有针对近红外IR和中期IR和IR IR和中IR的探测器的前景。 此外，可以通过控制层厚度来设计黑色磷的带隙。随着层数的减小，带隙增加，对于单层磷烯而达到2 eV。因此，在具有不同层编号的黑色磷设备阵列中工程层编号应在广泛的光谱范围内实现光检测。 我们将利用黑色磷的外来特性，并将这种新型材料与钼二硫化物（MOS2）整合在一起，以证明从可见光到红外线（IR）的广泛光谱状态下运行的高性能可调传感器阵列。 The novel features of this proposal are to capitalize on the tunable band gap properties of black phosphorus, the high mobility of its carriers to enable fast response time detectors, and at the same time, the atomically sharp interfaces between two-dimensional (2D) van der Waals heterostructures should yield ultra-sensitive detectors by reducing dark currents that plague the performance of doped-graded junctions.