EAGER: Black Phosphorus For Tunable Wide Bandwidth Sensor Arrays

EAGER：用于可调谐宽带传感器阵列的黑磷

• 批准号: 1753933
• 负责人: Anupama Kaul
• 金额: $ 23.27万
• 依托单位: University of North Texas
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2017
• 资助国家: 美国
• 起止时间: 2017-07-01 至 2022-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1753933&HistoricalAwards=false
• 关键词: EAGER; Black; Phosphorus; Tunable; Wide

Abstract: Black Phosphorus for Tunable Wide-bandwidth Sensor ArraysNanocarbons have captured the attention of researchers over the past several decades with materials such as buckeyballs, carbon nanotubes, carbon nanofibers and graphene. This rich variety of nanocarbon choices is possible due to the diverse crystalline structures of nancarbons, one form of which is two-dimensional (2D) graphene, a layered material. Two-dimensional graphene has enabled researchers to explore other 2D layered materials, such as the transition metal dichalcogenides, a wide variety of oxides and nitrides and clays. A recent addition to the suite of materials beyond carbon is phosphorus which also shows great diversity in its structures in the solid state, ranging from orthorhombic black phosphorus, cubic white phosphorus, monoclinic violet phosphorus, fibrous red phosphorus and amorphous red phosphorus. Recently, a great deal of attention has been paid to the layered form of phosphorus, specifically black phosphorus which has a unique puckered honeycomb lattice. However, unlike graphite, black phosphorus is a direct band semiconductor in the bulk making it an attractive material for optoelectronics and sensing applications. The focus of the work proposed here is to understand the intriguing electronic and optoelectronic properties of black phosphorous and to develop novel optoelectronic sensing devices from this material. Black phosphorus has a narrow direct band gap of 0.3 eV in the bulk, unlike most of the transition metal dichalcogenides which have much higher, indirect band gaps, suggesting that black phosphorus has prospects for sensing and detector applications targeted for the near IR and mid-IR regimes. Moreover, the band gap of black phosphorus can be engineered through control of layer thickness; the band gap increases with decreasing layer number, reaching 2 eV for single layer phosphorene. Therefore, engineering the layer number in arrays of black phosphorus devices with varying layer number should enable photo-detection over a broad spectral range. We will utilize the exotic properties of black phosphorus and integrate this novel material with molybdenum disulphide (MoS2) to demonstrate high performance tunable sensor arrays operational over a wide spectral regime from the visible to the infrared (IR). The novel features of this proposal are to capitalize on the tunable band gap properties of black phosphorus, the high mobility of its carriers to enable fast response time detectors, and at the same time, the atomically sharp interfaces between two-dimensional (2D) van der Waals heterostructures should yield ultra-sensitive detectors by reducing dark currents that plague the performance of doped-graded junctions.

摘要：用于可调谐宽带传感器阵列的黑磷过去几十年来，纳米碳凭借巴基球、碳纳米管、碳纳米纤维和石墨烯等材料引起了研究人员的关注。 由于纳米碳具有多种晶体结构，因此可以有如此丰富的纳米碳选择，其中一种形式是二维（2D）石墨烯，一种层状材料。二维石墨烯使研究人员能够探索其他二维层状材料，例如过渡金属二硫属化物、各种氧化物和氮化物以及粘土。 最近除了碳之外，磷也显示出其固态结构的巨大多样性，包括斜方黑磷、立方白磷、单斜紫磷、纤维状红磷和无定形红磷。最近，磷的层状形式受到了极大的关注，特别是具有独特的褶皱蜂窝晶格的黑磷。然而，与石墨不同，黑磷是一种块体直接带半导体，使其成为光电和传感应用中有吸引力的材料。 这里提出的工作重点是了解黑磷有趣的电子和光电特性，并利用这种材料开发新型光电传感器件。黑磷的直接带隙较窄，为 0.3 eV，这与大多数具有更高间接带隙的过渡金属二硫族化物不同，这表明黑磷在近红外和中红外传感和探测器应用方面具有前景。投资者关系制度。 此外，黑磷的带隙可以通过控制层厚度来设计。带隙随着层数的减少而增加，单层磷烯达到 2 eV。因此，设计具有不同层数的黑磷器件阵列中的层数应该能够在较宽的光谱范围内进行光电检测。 我们将利用黑磷的奇异特性，并将这种新型材料与二硫化钼 (MoS2) 集成，以展示在从可见光到红外 (IR) 的宽光谱范围内运行的高性能可调谐传感器阵列。 该提案的新颖特点是利用黑磷的可调谐带隙特性、其载流子的高迁移率来实现快速响应时间探测器，同时利用二维（2D）范式之间的原子级尖锐界面德瓦尔斯异质结构应该通过减少影响掺杂梯度结性能的暗电流来产生超灵敏的探测器。