CAREER: Fundamentals of Complex Chalcogenide Electronic Materials

职业：复杂硫族化物电子材料的基础知识

• 批准号: 1751736
• 负责人: Rafael Jaramillo
• 金额: $ 50万
• 依托单位: Massachusetts Institute of Technology
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2018
• 资助国家: 美国
• 起止时间: 2018-06-01 至 2023-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1751736&HistoricalAwards=false
• 关键词: CAREER; Fundamentals; Complex; Chalcogenide; Electronic

Non-technical description: New and improved materials are essential for development of new technologies. This project focuses on the development of semiconductors containing the elements barium, zirconium, sulfur, and selenium. The research team is motivated by theoretical predictions that certain combinations of these elements will produce semiconductors with properties that are useful for applications including energy conversion, lighting, and chemical manufacturing. The team tests these predictions by producing thin films of these materials and measuring the properties of the resulting materials. Reflecting the importance of new generation workforce to the economy, this project also includes the launch of a new internship program - the Guided Academic Industry Network (GAIN) - that introduces students at local community colleges to opportunities in materials science. The goals of GAIN are to create opportunities for students, and to enhance the workforce pipeline for materials-focused industries.Technical description: This project focuses on fundamental studies of chalcogenide perovskites in the Ba-Zr-S-Se system, which are predicted by theory to be mixed-anion semiconductors with band gap in the range 1.3 - 1.8 eV. The research is enabled by the development of techniques for the epitaxial growth of complex chalcogenide thin films, using hydride gas precursors and a molecular beam deposition system that was custom-designed for this purpose. Detailed structural and optoelectronic characterization is used to address issues such as the effect of tuning the ionic-to-covalent balance of chemical bonds on the optoelectronic properties of a semiconductor, and the ability of the perovskite structure to accommodate anion alloying. The potential for this semiconducting alloy to be used in minority-carrier devices is assessed by measuring recombination rates, and by evaluating the performance of thin films in two energy-conversion technologies: solar cells and photo-electrochemical hydrogen production.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术描述：新的和改进的材料对于开发新技术至关重要。该项目着重于包含钡，锆，硫和硒的半导体的发展。研究团队的动机是由理论上的预测激励，即这些元素的某些组合将产生半导体，其属性可用于包括能量转换，照明和化学制造的应用。团队通过生产这些材料的薄膜并测量所得材料的性质来测试这些预测。该项目反映了新一代劳动力对经济的重要性，还包括启动新的实习计划 - 指导学术界网络（GANE），该计划向当地社区大学的学生介绍了材料科学的机会。收益的目标是为学生创造机会，并增强以材料为中心的行业的劳动力管道。技术描述：该项目着重于BA-ZR-S-SE系统中辣椒剂钙蛋白酶的基础研究，这些研究由BA-ZR-S-SE系统中的预测。理论是带有带隙在1.3-1.8 eV范围内的带隙的混合矿体半导体。这项研究是通过使用氢化氢气前体和分子束沉积系统的复杂奶油素化薄膜外延生长的技术发展来实现这项研究的，用于此目的。详细的结构和光电表征用于解决问题，例如调整化学键对半导体光电特性的离子与共价平衡的影响，以及钙钛矿结构可容纳阴离子合金的能力。通过测量重组率以及评估两种能量转换技术的薄膜的性能来评估这种半导体合金用于少数族裔载体设备的潜力：太阳能电池和光电化学氢的产生。使命，并被认为是通过基金会的知识分子优点和更广泛影响的审查标准通过评估值得支持的。

项目成果

Discovery of highly polarizable semiconductors BaZrS3 and Ba3Zr2S7

• DOI: 10.1103/physrevmaterials.4.091601
• 发表时间: 2020-06
• 期刊: Physical Review Materials
• 影响因子: 3.4
• 作者: Stephen Filippone;Boyang Zhao;Shanyuan Niu;Nathan Z. Koocher;D. Silevitch;I. Fina;J. Rondinelli;J. Ravichandran;R. Jaramillo

Determination of adsorption-controlled growth windows of chalcogenide perovskites

硫属化物钙钛矿吸附控制生长窗的测定

• DOI: 10.1557/mrc.2018.10
• 发表时间: 2018
• 期刊: MRS Communications
• 影响因子: 1.9
• 作者: Filippone, Stephen A.;Sun, Yi-Yang;Jaramillo, R.
• 通讯作者: Jaramillo, R.

Time-resolved photoluminescence studies of perovskite chalcogenides

钙钛矿硫属化物的时间分辨光致发光研究

• DOI: 10.1039/d2fd00047d
• 发表时间: 2022
• 期刊: Faraday Discussions
• 影响因子: 3.4
• 作者: Ye, Kevin;Zhao, Boyang;Diroll, Benjamin T.;Ravichandran, Jayakanth;Jaramillo, R.
• 通讯作者: Jaramillo, R.

High densification of BaZrS3 powder inspired by the cold-sintering process

• DOI: 10.1557/s43578-021-00404-1
• 发表时间: 2021-09
• 期刊: Journal of Materials Research
• 影响因子: 2.7
• 作者: Stephen Filippone;S. Song;R. Jaramillo

In praise and in search of highly-polarizable semiconductors: Technological promise and discovery strategies

• DOI: 10.1063/1.5124795
• 发表时间: 2019-10-01
• 期刊: APL MATERIALS
• 影响因子: 6.1
• 作者: Jaramillo, R.;Ravichandran, J.
• 通讯作者: Ravichandran, J.