Polarization-Driven Electron-Hole Bilayers in Quantum Wells

量子阱中偏振驱动的电子空穴双层

• 批准号: 1710298
• 负责人: Debdeep Jena
• 金额: $ 40万
• 依托单位: Cornell University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2017
• 资助国家: 美国
• 起止时间: 2017-07-01 至 2021-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1710298&HistoricalAwards=false
• 关键词: Polarization; Driven; Electron; Hole; Bilayers

Non-technical description: This project aims to discover new electronic and optical phenomena hidden in a material system that is currently used in solid state lighting, in communication systems, and power electronics, and is in almost all iPhones and iPads. The research focuses on electrical charge carriers of opposite signs located very close to each other in gallium nitride quantum structures. The carriers of opposite signs maintain separate identities, until they receive a command (for example through a small voltage or a current), upon which they mix strongly to either emit light, or flow as currents with very little energy dissipation. This sort of phenomena has been long desired for making low-power or ultrafast and energy-efficient electronic switches, for photonic devices, and potentially for sensor environments. Thus, findings of this project have a potential to impact the electronics and photonics industries, and environmental health and safety systems. The project trains graduate students in a fascinating emerging field at the intersection of physics, materials science, and electrical engineering. In addition to expanding existing outreach programs, new activities are considered with a special focus on the high-school students and underrepresented groups, including direct school visits and in-class demonstrations. The dissemination of research results in journal publications, presentations at conferences and inclusion in courses taught by the PI made available online ensures the outreach to the widest possible audience.Technical description: This project explores the quantum transport and optical properties of III-nitride quantum structures and their potential applications in electron-hole bilayer systems, driven by large polarization fields. Such bilayers are difficult to create in other material systems either because of the lack of polarization, doping limitations, or because of low breakdown fields. When created (for example, in two-dimensional layered materials), additional challenges occur related to their chemical doping and contact reliability. In this project, the PI takes advantage of unique recent technological progress in epitaxially regrown contacts to two-dimensional electron and hole gases in novel compressively strained GaN quantum wells on AlN substrates to explore bilayer physics in a fundamentally new platform. Parallel two-dimensional systems of electrons and holes boast rich physics at several levels of complexity - from uncoupled two-dimensional electron-gas / two-dimensional hole gas p-n diodes that could lead to new electronic and photonic devices, to weakly coupled systems, exhibiting Coulomb drag, to strongly coupled systems that have shown glimpses of excitonic or Bose-Einstein condensation. And with the tantalizing possibility of polarization-driven topological edge states, the outcomes of the project has a potential for significant scientific and technological advances for ultra-low power electronic, photonic quantum information-processing applications.

非技术描述：该项目旨在发现隐藏在材料系统中的新电子和光学现象，该材料系统目前用于固态照明、通信系统和电力电子设备，并且几乎用于所有 iPhone 和 iPad。该研究的重点是氮化镓量子结构中彼此非常接近的相反符号的电荷载流子。符号相反的载流子保持独立的身份，直到它们收到命令（例如通过小电压或电流），然后它们强烈混合以发光，或以很少的能量耗散作为电流流动。长期以来，人们一直希望这种现象能够用于制造低功耗或超快且节能的电子开关、光子器件以及潜在的传感器环境。因此，该项目的研究结果有可能影响电子和光子行业以及环境健康和安全系统。该项目在物理学、材料科学和电气工程交叉领域的一个令人着迷的新兴领域对研究生进行培训。除了扩大现有的外展计划外，还考虑开展新的活动，特别关注高中生和代表性不足的群体，包括直接学校参观和课堂演示。研究成果通过期刊出版物、会议演讲以及 PI 在线教授的课程进行传播，确保了尽可能广泛的受众。技术说明：该项目探索 III 族氮化物量子结构的量子输运和光学特性及其在大极化场驱动的电子空穴双层系统中的潜在应用。这种双层很难在其他材料系统中形成，要么是因为缺乏极化、掺杂限制，要么是因为击穿场低。创建时（例如，在二维层状材料中），会出现与其化学掺杂和接触可靠性相关的额外挑战。在该项目中，PI 利用 AlN 衬底上新型压应变 GaN 量子阱中二维电子和空穴气体外延再生长接触方面的独特最新技术进展，在全新平台上探索双层物理。电子和空穴的并行二维系统在多个复杂程度上拥有丰富的物理特性 - 从可能导致新电子和光子器件的非耦合二维电子气/二维空穴气 p-n 二极管，到弱耦合系统，表现出库仑阻力，强耦合系统已显示出激子或玻色-爱因斯坦凝聚的一瞥。凭借偏振驱动拓扑边缘态的诱人可能性，该项目的成果有可能为超低功耗电子、光子量子信息处理应用带来重大科学和技术进步。

项目成果

Nitride LEDs and Lasers with Buried Tunnel Junctions

具有埋藏隧道结的氮化物 LED 和激光器

• DOI: 10.1149/2.0412001jss
• 发表时间: 2019-12
• 期刊: ECS Journal of Solid State Science and Technology
• 影响因子: 2.2
• 作者: Turski, Henryk;Siekacz, Marcin;Muzioł, Grzegorz;Hajdel, Mateusz;Stańczyk, Szymon;Żak, Mikołaj;Chlipała, Mikołaj;Skierbiszewski, Czeslaw;Bharadwaj, Shyam;Xing, Huili Grace;et al
• 通讯作者: et al

Monolithically p-down nitride laser diodes and LEDs obtained by MBE using buried tunnel junction design

采用埋入式隧道结设计通过 MBE 获得单片 p-down 氮化物激光二极管和 LED

• DOI: 10.1117/12.2548996
• 发表时间: 2020-01
• 期刊: Monolithically p-down nitride laser diodes and LEDs obtained by MBE using buried tunnel junction design
• 作者: Turski, Henryk;Bharadwaj, Shyam;Siekacz, Marcin;Muziol, Grzegorz;Chlipala, Mikolaj;Zak, Mikolaj;Hajdel, Mateusz;Nowakowski;Stanczyk, Szymon;Xing, Huili;et al
• 通讯作者: et al

Hole mobility of strained GaN from first principles

• DOI: 10.1103/physrevb.100.085204
• 发表时间: 2019-08-06
• 期刊: Physical Review B
• 影响因子: 3.7
• 作者: S. Ponc'e;D. Jena;F. Giustino
• 通讯作者: F. Giustino

Wurtzite phonons and the mobility of a GaN/AlN 2D hole gas

纤锌矿声子和 GaN/AlN 二维空穴气体的迁移率

• DOI: 10.1063/1.5099957
• 发表时间: 2019-06
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Bader, Samuel James;Chaudhuri, Reet;Schubert, Martin F.;Then, Han Wui;Xing, Huili Grace;Jena, Debdeep
• 通讯作者: Jena, Debdeep

Blue (In,Ga)N light-emitting diodes with buried n + – p + tunnel junctions by plasma-assisted molecular beam epitaxy

等离子体辅助分子束外延法制备具有掩埋n-p隧道结的蓝色(In,Ga)N发光二极管

• DOI: 10.7567/1347-4065/ab1e78
• 发表时间: 2019-06
• 期刊: Japanese Journal of Applied Physics
• 影响因子: 1.5
• 作者: Cho, YongJin;Bharadwaj, Shyam;Hu, Zongyang;Nomoto, Kazuki;Jahn, Uwe;Xing, Huili Grace;Jena, Debdeep
• 通讯作者: Jena, Debdeep