Misfit Dislocation Dynamics at Heterovalent Semiconductor Interfaces

异价半导体界面处的失配位错动力学

• 批准号: 1708957
• 负责人: Tyler Grassman
• 金额: $ 37.99万
• 依托单位: Ohio State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2017
• 资助国家: 美国
• 起止时间: 2017-07-01 至 2021-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1708957&HistoricalAwards=false
• 关键词: Misfit; Dislocation; Dynamics; Heterovalent; Semiconductor

Non-Technical Description: As scientists and engineers seek to develop future generations of functional electronic and optical semiconductor devices - transistors, light emitting diodes, lasers, photodetectors, solar cells and beyond - integration of dissimilar, but complementary materials is a crucial step toward achieving new and desirable properties. However, these fundamental dissimilarities, or incompatibilities, tend to result in the formation of defects within the constituent semiconductor materials during the integration process, which detrimentally impacts the operation of the devices produced using these materials. Therefore, to enable the free and flexible application of dissimilar materials integration toward new device concepts, the various problems introduced by these incompatibilities must be understood and methods for their mitigation must be developed. This project seeks to better understand the impact and interplay between two common dissimilarities that exist in many target materials integration systems: heterovalency (dissimilar chemical bonding) and lattice mismatch (dissimilar atomic spacing). The results of this work are expected to provide guidance to researchers with respect to the design of fabrication processes that can avoid or minimize detrimental defect formation, making possible the development of next generation semiconductor devices with powerful new and beneficial properties. This project is also training graduate and undergraduate students as future innovators within the semiconductor research and development industry, while also establishing new research techniques and methods are benefit a wide range of investigators and enterprises within the field.Technical Description: The proposed work tackles important questions regarding the physical, chemical, and electronic structure of the heterovalent, lattice-mismatched interfaces and their impact on the formation and evolution of misfit dislocations within dissimilar materials integration systems. Understanding the specific relationships between dislocation dynamics and the underlying materials dissimilarities could enable bottom-up epitaxial and structural design approaches that allow for the control and mitigation of detrimental defect microstructure. The specific research objectives are: (1) to create a methodology to decouple and independently analyze the effects of heterovalency and lattice-mismatch at a contemporarily important model dissimilar semiconductor interface; (2) to thoroughly characterize the formation/nucleation, glide, and reaction dynamics of misfit dislocations at this interface; (3) to identify any fine structure at the interface resulting from the heterovalency; and (4) to determine the ultimate impact of heterovalency on the dislocation dynamics at this interface. This is accomplished by using a combination of novel sample design, epitaxial synthesis and a multi-scale suite of powerful structural characterization methods, emphasizing the holistic connection between heteroepitaxy, resultant interfacial morphology and strain-induced microstructure. The fundamental knowledge and scientific insight gained, and the novel methods developed within this effort, are directly applicable to nominally any dissimilar crystalline materials integration system.

非技术描述：随着科学家和工程师寻求开发下一代功能性电子和光学半导体器件（晶体管、发光二极管、激光器、光电探测器、太阳能电池等），不同但互补的材料的集成是实现这一目标的关键一步。新的和理想的属性。然而，这些基本的差异或不兼容性往往会导致在集成过程中在组成的半导体材料内形成缺陷，这对使用这些材料生产的器件的操作产生不利影响。因此，为了能够自由灵活地将异种材料集成应用于新器件概念，必须了解这些不兼容性带来的各种问题，并开发缓解这些问题的方法。该项目旨在更好地了解许多目标材料集成系统中存在的两种常见差异之间的影响和相互作用：异价性（不同的化学键合）和晶格失配（不同的原子间距）。这项工作的结果预计将为研究人员提供制造工艺设计方面的指导，从而避免或最大限度地减少有害缺陷的形成，从而使开发具有强大的新的有益特性的下一代半导体器件成为可能。该项目还将研究生和本科生培养为半导体研发行业的未来创新者，同时建立新的研究技术和方法，使该领域的广泛研究人员和企业受益。技术描述：拟议的工作解决了重要问题关于异价、晶格失配界面的物理、化学和电子结构及其对异种材料集成系统内错配位错的形成和演化的影响。了解位错动力学与底层材料差异之间的具体关系可以实现自下而上的外延和结构设计方法，从而控制和减轻有害的缺陷微观结构。具体研究目标是：（1）创建一种方法来解耦并独立分析异价和晶格失配对当代重要模型异种半导体界面的影响； (2) 彻底表征该界面处错配位错的形成/成核、滑移和反应动力学； (3) 识别由于异价性而产生的界面处的任何精细结构； (4) 确定异价性对该界面位错动力学的最终影响。这是通过结合新颖的样品设计、外延合成和多尺度的强大结构表征方法来实现的，强调异质外延、所得界面形态和应变诱导微结构之间的整体联系。所获得的基础知识和科学见解以及在此过程中开发的新颖方法可直接适用于名义上任何不同的晶体材料集成系统。

项目成果

Correlation of Early-Stage Growth Process Conditions with Dislocation Evolution in MOCVD-Based GaP/Si Heteroepitaxy

基于 MOCVD 的 GaP/Si 异质外延中早期生长工艺条件与位错演化的相关性

• DOI: 10.1016/j.jcrysgro.2021.126251
• 发表时间: 2021-07
• 期刊: Journal of Crystal Growth
• 影响因子: 1.8
• 作者: Boyer, J.T.;Blumer, A.N.;Blumer, Z.H.;Lepkowski, D.L.;Grassman, T.J.
• 通讯作者: Grassman, T.J.

Quantitative misfit dislocation characterization with electron channeling contrast imaging

利用电子通道对比成像定量失配位错表征

• DOI: 10.1017/s1431927621003500
• 发表时间: 2021-08
• 期刊: Microscopy and Microanalysis
• 影响因子: 2.8
• 作者: Blumer, Ari;Baan, Marzieh;Blumer, Zak;Boyer, Jacob;Grassman, Tyler J.
• 通讯作者: Grassman, Tyler J.

Exploring Multiple Pathways to Low TDD GaP/Si for III-V/Si Photovoltaics

探索 III-V/Si 光伏低 TDD GaP/Si 的多种途径

• DOI: 10.1109/pvsc43889.2021.9518431
• 发表时间: 2021-06
• 期刊: 48th IEEE Photovoltaic Specialists Conference
• 作者: Boyer, Jacob T.;Blumer, Zak H.;Lepkowski, Daniel L.;Ringel, Steven A.;Grassman, Tyler J.
• 通讯作者: Grassman, Tyler J.

Development of Low-TDD GaAsyP1-y/GaP/Si Metamorphic Materials for High-Efficiency III-V/Si Photovoltaics

开发用于高效 III-V/Si 光伏的低 TDD GaAsyP1-y/GaP/Si 变质材料

• DOI: 10.1109/pvsc45281.2020.9300803
• 发表时间: 2020-06
• 期刊: 47th IEEE Photovoltaic Specialists Conference
• 作者: Boyer, Jacob T.;Blumer, Ari N.;Blumer, Zak H.;Rodriguez, Francisco A.;Lepkowski, Daniel L.;Ringel, Steven A.;Grassman, Tyler J.
• 通讯作者: Grassman, Tyler J.

Quantitative Characterization of Misfit Dislocations at GaP/Si Heteroepitaxial Interfaces via Electron Channeling Contrast Imaging and Semi-Automated Image Analysis

通过电子通道对比成像和半自动图像分析定量表征 GaP/Si 异质外延界面处的失配位错

• DOI: 10.1017/s1431927619001740
• 发表时间: 2019-08
• 期刊: Microscopy and Microanalysis
• 影响因子: 2.8
• 作者: Blumer, Ari N.;Boyer, Jacob T.;Deitz, Julia I.;Rodriguez, Francisco A.;Grassman, Tyler J.
• 通讯作者: Grassman, Tyler J.