Collaborative Research: Strain Based Devices for Switches and Memory Applications

合作研究：用于开关和存储器应用的基于应变的器件

• 批准号: 1711332
• 负责人: Yong Chen
• 金额: $ 21万
• 依托单位: Purdue University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2017
• 资助国家: 美国
• 起止时间: 2017-07-01 至 2021-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1711332&HistoricalAwards=false
• 关键词: Collaborative; Research; Strain; Based; Devices

Abstract:Non-Technical:The last decade has seen tremendous advances in the realization of new materials classes with unique properties such as topological insulators and phase change materials. This proposal seeks to harness the properties of these new materials classes to build a new generation of strain-based devices. Strain control of devices is at the beginning stages with many theoretical predictions and little experimental work. Moreover, much of the predictions of strain induced phase transitions are yet to be tested. Our success in creating strain and gated devices will allow us to tune bulk band structure and transport properties into metallic and insulating regimes thereby creating the basis for future straintronic devices. The conditions under which we are able to realize reversible phase transitions from insulating to metallic in topological materials will provide important information for the theoretical understanding of these systems. Realizing, characterizing, and measuring strain tunable systems will allow us to understand and explore strain dependent materials properties for applications such as optical and electrical storage devices, solid-state displays, photonic memories, plasmonic-based circuits, optical modulators, and computing. Undergraduates, graduate students and post-docs involved in this project will be trained on materials and instruments at the forefront of today's research. The success of the project will enhance research experience for women in physics. Many of the undergraduates, graduate students and post-docs working in the PIs' labs are from under represented groups. The PI's integrated outreach and education activities will expose talented high school students to cutting edge research.Technical:The unique properties of topological insulators, topological crystalline insulators, and transition metal dichalcogenides, as well as their potential tunability by strain and doping make them very attractive for future applications. Our ability to harness the extraordinary properties of this new generation of materials however depends heavily on our ability to manipulate their electronic properties. While a whole host of potential devices have been proposed, very few have been realized so far. This collaborative research project describes the PIs plans to investigate different avenues to use strain to control Dirac surfaces states and phase change materials. To achieve this, the PIs will combine their considerable expertise in these materials classes with advanced measurement techniques. The success of the project hinges on a tight feedback loop between molecular beam epitaxy thin film growth, characterization using low temperature scanning tunneling microscopy, and spin and charge transport measurements. Thin films of 3D topological insulators, topological crystalline insulators and phase change materials will be grown characterized with a range of probes including scanning tunneling microscopy, X-ray scattering and atomic force microscopy. Strain devices for transport measurements will be made using both thin films as well as exfoliated flakes. The goal is to create materials with specific properties tailored for device applications through reduced dimensionality and strain.

摘要：非技术：在过去的十年中，在实现具有独特属性（例如拓扑绝缘子和相变材料）的新材料类方面取得了巨大进步。该建议旨在利用这些新材料类的特性来构建新一代的基于应变的设备。设备的应变控制是在开始阶段，具有许多理论预测，实验性工作很少。此外，菌株诱导的相变的许多预测尚待测试。我们在创建应变和封闭式设备方面的成功将使我们能够调整散装带状结构并将属性传输到金属和绝缘状态，从而为将来的应变器设备创造基础。我们能够意识到从绝缘到金属材料中的金属的可逆相转变的条件将为这些系统的理论理解提供重要信息。实现，表征和测量应变可调节系统将使我们能够理解和探索诸如光学和电气存储设备，固态显示器，光子记忆，基于等离激元的电路，光学调节器和计算等应用的应用依赖性材料特性。该项目参与该项目的本科生，研究生和研究生将接受材料和工具的培训。该项目的成功将增强物理女性的研究经验。在PIS实验室工作的许多本科生，研究生和研究后都来自代表的群体。 PI的综合宣传和教育活动将使才华横溢的高中生进行最先进的研究。技术：拓扑绝缘子，拓扑结晶绝缘子和过渡金属二进制二色代基的独特特性，以及通过劳累和兴奋剂的潜在可伤害性，使它们非常有吸引力用于将来的应用。但是，我们利用这种新一代材料的非凡特性的能力在很大程度上取决于我们操纵其电子特性的能力。尽管已经提出了许多潜在的设备，但到目前为止，很少有人意识到。该协作研究项目描述了PIS计划，旨在调查使用应变来控制狄拉克表面状态和相变材料的不同途径。为了实现这一目标，PI将在这些材料类别中将其大量专业知识与高级测量技术相结合。该项目的成功取决于分子束外延薄膜的生长，使用低温扫描隧道显微镜以及自旋和电荷传输测量值之间的紧密反馈回路。 3D拓扑绝缘子，拓扑结晶绝缘子和相变材料的薄膜将以一系列探针的特征进行，包括扫描隧道显微镜，X射线散射和原子力显微镜。使用薄膜和去角质薄片进行运输测量的应变装置。目标是通过降低维度和应变来创建针对设备应用定制的特定属性的材料。

项目成果

Increased Curie temperature and enhanced perpendicular magneto anisotropy of Cr2Ge2Te6/NiO heterostructures

• DOI: 10.1063/1.5130930
• 发表时间: 2019-12-02
• 期刊: APPLIED PHYSICS LETTERS
• 影响因子: 4
• 作者: Idzuchi, H.;Allcca, A. E. Llacsahuanga;Chen, Y. P.
• 通讯作者: Chen, Y. P.