Controlling Magnetism, Metal-Insulator Transitions, and Superconductivity in Ruthenate Thin Films

控制钌酸盐薄膜中的磁性、金属-绝缘体转变和超导性

• 批准号: 1709255
• 负责人: Kyle Shen
• 金额: $ 42.5万
• 依托单位: Cornell University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2017
• 资助国家: 美国
• 起止时间: 2017-08-15 至 2021-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1709255&HistoricalAwards=false
• 关键词: Controlling; Magnetism; Metal; Insulator; Transitions

Non-Technical Abstract: The electronic and magnetic properties of materials form the backbone of modern technologies, including computer processors, telecommunications, information storage, and displays. Moreover, the ability to deterministically control these properties, for instance, in semiconductor transistors, is one of the crowning achievements of materials physics in the past fifty years and has had enormous societal and economic impacts. However, the end of Moore's Law and the increasing need for smaller, faster, and more power efficient electronics demands the search for new electronic materials that can ultimately replace existing materials such as silicon and copper which have been in use for nearly half a century. This project aims to investigate one class of electronic materials comprised of ruthenium oxides which exhibit a tremendous variety of electronic and magnetic properties, some of which could be potentially important for a wide range of applications including quantum computing, non-volatile memories, and sensing. These materials are synthesized as thin films which are only a few atoms thick, and their properties are manipulated by controlling the thickness of the film or stretching the bonds between atoms. Advanced spectroscopic tools allow for a more detailed understanding of how to better optimize and control their desired properties. Finally, this project provides crucial training to young scientists in materials synthesis and characterization, and the samples fabricated in these studies support a number of scientific collaborations both nationwide and internationally.Technical Abstract: A major challenge in condensed matter physics is to control the many-body interactions in correlated quantum materials with the objective of being able to engineer their properties in a deterministic fashion. The potential for quantum materials as platforms for future technologies such as topological quantum computation or memories has motivated an effort to discover new avenues to measure and manipulate their electronic and magnetic structure. The strategy outlined in this proposal is to use the family of layered ruthenates which exhibit a range of emergent electronic and magnetic phenomena, including spin-triplet superconductivity, electronic nematicity, quantum criticality, and metal-insulator transitions, as a platform for manipulating electronic and magnetic properties through epitaxial strain, particularly since the properties of ruthenates are particularly responsive to small perturbations. This project combines oxide molecular beam epitaxy growth and in situ high-resolution angle-resolved photoemission to investigate the electronic structure of the ruthenates, and how the band structure and Fermi surfaces responds to strain. Graduate students involved in this project are trained in molecular beam epitaxy growth, photoemission spectroscopy, and a multitude of sample characterization techniques. Some specific objectives of this work include increasing the superconducting Tc of Sr2RuO4 via epitaxial strain, and gaining insight into the mechanism of spin-triplet superconductivity by correlating Tc with changes in the Fermi surface topology. Another goal is to control the magnetic field driven quantum phase transition in Sr3Ru2O7 by changing the RuO6 octahedral rotation angles through epitaxial strain, and correlating these behaviors with changes in the electronic structure.

非技术摘要：材料的电子和磁性构成了现代技术的骨干，包括计算机处理器，电信，信息存储和显示器。此外，确定性控制这些特性的能力，例如，在半导体晶体管中，是过去五十年来材料物理学的最高成就之一，并且具有巨大的社会和经济影响。但是，摩尔定律的终结以及对较小，更快，更有效的电子设备的需求日益增加，需要寻找新的电子材料，这些材料最终可以取代现有的材料，例如硅和铜，这些材料已经使用了将近半个世纪。该项目的目的是研究一类电子材料，该电子材料由氟氧化物组成，这些材料具有各种各样的电子和磁性特性，其中一些对于包括量子计算，非挥发性记忆和感应的广泛应用可能非常重要。这些材料被合成为薄膜，仅少数几个原子厚，并且通过控制膜的厚度或拉伸原子之间的键来操纵它们的特性。高级光谱工具可以更详细地了解如何更好地优化和控制其所需属性。最后，该项目为年轻科学家提供了材料综合和特征的重要培训，这些研究中制造的样本支持了许多在全国范围内和国际化的科学合作。技术摘要：凝聚态物理学的主要挑战是控制与相关量子材料中多体互动的多体互动，并具有能够在确定性上具有确定性的属性的相关量子材料的目标。量子材料作为未来技术（例如拓扑量子计算或记忆）的平台的潜力促使人们努力发现新的途径来测量和操纵其电子和磁性结构。该提案中概述的策略是利用分层截风形的家族，这些家族表现出一系列新兴的电子和磁性现象，包括自旋三脑和磁性超导性，电子nematicitions，量子关键性和金属构造物过渡，是通过表达较小的per wative wate per the the and per n outh per n outh periuth per theenentiations的平台。该项目结合了氧化物分子束外延的生长和原位高分辨率角度分辨光发射，以研究鲜明情况的电子结构，以及带状结构和费米表面如何响应菌株。参与该项目的研究生接受了分子束外延生长，光发射光谱和多种样品表征技术的训练。这项工作的某些特定目标包括通过外延菌株增加SR2RUO4的超导TC，并通过将TC与Fermi Surface拓扑的变化相关联，从而深入了解自旋三曲线超导性的机制。另一个目标是通过将RUO6八面体旋转角通过外延菌株更改RUO6八面体旋转角度来控制SR3RU2O7中磁场驱动的量子相变，并将这些行为与电子结构的变化相关联。

项目成果

Revealing the hidden heavy Fermi liquid in CaRuO3

揭示 CaRuO3 中隐藏的重费米液体

• DOI: 10.1103/physrevb.98.041110
• 发表时间: 2018-07
• 期刊: PHYSICAL REVIEW B
• 影响因子: 3.7
• 作者: Liu Yang;Nair Hari P.;Ruf Jacob P.;Schlom Darrell G.;Shen Kyle M.
• 通讯作者: Shen Kyle M.

Quantum oscillations and quasiparticle properties of thin film Sr2RuO4

• DOI: 10.1103/physrevb.104.045152
• 发表时间: 2021-03
• 期刊: Physical Review B
• 影响因子: 3.7
• 作者: Yawen Fang;H. Nair;L. Miao;B. Goodge;N. Schreiber;J. Ruf;L. Kourkoutis;K. Shen;D. Schlom;B. Ramshaw

Two-dimensional magnetic monopole gas in an oxide heterostructure

• DOI: 10.1038/s41467-020-15213-z
• 发表时间: 2020-03-12
• 期刊: NATURE COMMUNICATIONS
• 影响因子: 16.6
• 作者: Miao, L.;Lee, Y.;Shen, K. M.
• 通讯作者: Shen, K. M.

Strain relaxation induced transverse resistivity anomalies in SrRuO3 thin films

• DOI: 10.1103/physrevb.102.064406
• 发表时间: 2020-08
• 期刊: Physical Review B
• 影响因子: 3.7
• 作者: L. Miao;N. Schreiber;H. Nair;B. Goodge;Shengwei Jiang;J. Ruf;Yonghun Lee;Matthew Fu;B. Tsang;Yingfei Li;C. Zeledon;J. Shan;K. Mak;L. Kourkoutis;D. Schlom;K. Shen

Incoherent Cooper Pairing and Pseudogap Behavior in Single-Layer FeSe/SrTiO3

• DOI: 10.1103/physrevx.11.021054
• 发表时间: 2021-06-10
• 期刊: PHYSICAL REVIEW X
• 影响因子: 12.5
• 作者: Faeth, B. D.;Yang, S-L;Shen, K. M.
• 通讯作者: Shen, K. M.