EAGER Self-Catalyzed Growth of Patterned GaAsSb and GaAsSbN Nanowires for Optoelectronic Devices

用于光电器件的图案化 GaAsSb 和 GaAsSbN 纳米线的急切自催化生长

基本信息

批准号：
1649517
负责人：
Shanthi Iyer
金额：
$ 29.78万
依托单位：
North Carolina Agricultural & Technical State University
依托单位国家：
美国
项目类别：
Standard Grant
财政年份：
2016
资助国家：
美国
起止时间：
2016-09-01 至 2019-12-31
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=1649517&HistoricalAwards=false
关键词：
EAGER Self Catalyzed Growth Patterned

项目摘要

The National Science Foundation uses the Early-concept Grants for Exploratory Research (EAGER) funding mechanism to support exploratory work in its early stages on untested, but potentially transformative, research ideas or approaches. This EAGER project was awarded as a result of the invitation in the Dear Colleague Letter NSF 16-080 to proposers from Historically Black Colleges and Universities to submit proposals that would strengthen research capacity of faculty at the institution. The project at North Carolina Agricultural and Technical State University proposes a comprehensive investigation of the band gap engineering in a certain nanowire ensemble. The results of this project could have wide-ranging technological applications in security, quantum communications, photovoltaics and medical fields. With better optical trapping features and a large aspect ratio facilitating radial strain relaxation, one-dimensional architecture of semiconductor nanowires (NWs) can be manipulated for a distinct combination of physical, electronic and optical properties. The focus of this project is geared towards comprehensive investigation of the band gap engineering in the patterned array of a GaAsSb and dilute nitride GaAsSbN nanowire ensemble, which is a potential candidate for implementation in next-generation tunable, high performance nanoscale sources and detectors spanning a significant portion of the short wave infrared region. This project's objective is to probe the effects of NW array pitch on the growth kinetics, structure, band gap engineering, and optical properties of patterned GaAsSb and GaAsSbN NWs on (111)Si grown by self-assisted molecular beam epitaxy. A variety of characterization techniques will be employed to investigate the role of the surfactant, Sb, and how it can be manipulated in NW array to accomplish the band gap engineering, independent tuning of the band gap, and optical characteristics to achieve the desired band gap with high optical performance. Further, incorporating a diluted amount of nitrogen to the GaAsSb alloy is known to exhibit distinct and favorable optoelectronic properties in thin films, though offset by the presence of point defects. The experimental work on both of the above alloys will be guided by finite difference time domain and finite element modeling simulations of the growth kinetics and optical characteristics, respectively.

美国国家科学基金会使用早期概念探索性研究资助 (EAGER) 资助机制来支持早期阶段的探索性工作，涉及未经测试但具有潜在变革性的研究想法或方法。该 EAGER 项目的获奖是由于《亲爱的同事信 NSF 16-080》中邀请历史悠久的黑人学院和大学的提案者提交提案，以加强该机构教师的研究能力。北卡罗来纳州农业技术州立大学的该项目提出对某种纳米线集合中的带隙工程进行全面研究。该项目的成果可在安全、量子通信、光伏和医疗领域具有广泛的技术应用。凭借更好的光学捕获特性和有利于径向应变弛豫的大纵横比，可以操纵半导体纳米线（NW）的一维结构以获得物理、电子和光学特性的独特组合。该项目的重点是对 GaAsSb 和稀氮化物 GaAsSbN 纳米线集合的图案阵列中的带隙工程进行全面研究，这是在下一代可调谐、高性能纳米级源和探测器中实施的潜在候选者。短波红外区域的很大一部分。该项目的目标是探讨纳米线阵列间距对自辅助分子束外延生长的 (111)Si 上图案化 GaAsSb 和 GaAsSbN 纳米线的生长动力学、结构、带隙工程和光学性能的影响。将采用各种表征技术来研究表面活性剂 Sb 的作用，以及如何在纳米线阵列中操纵它来完成带隙工程、带隙的独立调谐和光学特性以实现所需的带隙具有高光学性能。此外，已知将稀释量的氮掺入到GaAsSb合金中可以在薄膜中表现出独特且有利的光电特性，尽管点缺陷的存在会抵消这种特性。上述两种合金的实验工作将分别以生长动力学和光学特性的有限差分时域和有限元建模模拟为指导。

项目成果

期刊论文数量（3）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Pitch-Induced Bandgap Tuning in Self-Catalyzed Growth of Patterned GaAsSb Axial and GaAs/GaAsSb Core?Shell Nanowires Using Molecular Beam Epitaxy

利用分子束外延自催化生长图案化 GaAsSb 纳米线和 GaAs/GaAsSb 核壳纳米线中的节距诱导带隙调节

DOI：
10.1021/acs.cgd.6b01577
发表时间：
2016-12
期刊：
Crystal Growth & Design
影响因子：
3.8
作者：
Sharma, Manish;Karim, Md Rezaul;Kasanaboina, Pavan;Li, Jia;Iyer, Shanthi
通讯作者：
Iyer, Shanthi

Impact of processing and growth conditions on the site-catalyzed patterned growth of GaAs nanowires by molecular beam epitaxy

加工和生长条件对分子束外延 GaAs 纳米线位点催化图案化生长的影响

DOI：
10.1117/12.2274669
发表时间：
2017-08
期刊：
and Devices XIV
影响因子：
0
作者：
Sharma, Manish;Kasanaboina, Pavan K.;Iyer, Shanthi;Campo, Eva M.;Dobisz, Elizabeth A.;Eldada, Louay A.
通讯作者：
Eldada, Louay A.

Study of patterned GaAsSbN nanowires using sigmoidal model

使用 S 形模型研究图案化 GaAsSbN 纳米线

DOI：
10.1038/s41598-021-83973-9
发表时间：
2021-02-25
期刊：
Scientific Reports
影响因子：
4.6
作者：
Johnson S;Pokharel R;Lowe M;Kuchoor H;Nalamati S;Davis K;Rathnayake H;Iyer S
通讯作者：
Iyer S