E2CDA: Type I: Collaborative Research: A Fast 70mV Transistor Technology for Ultra-Low-Energy Computing

E2CDA：类型 I：协作研究：用于超低能耗计算的快速 70mV 晶体管技术

• 批准号: 1640030
• 负责人: Mark Rodwell
• 金额: $ 206.55万
• 依托单位: University of California-Santa Barbara
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2016
• 资助国家: 美国
• 起止时间: 2016-10-01 至 2021-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1640030&HistoricalAwards=false
• 关键词: E2CDA; Type; Collaborative; Research; Fast

Microprocessors containing billions of transistor switches are at the heart of PCs, cell phones, computer servers answering our internet searches, and supercomputers modeling the weather and designing new drugs and aircraft. Modern machinery is controlled by microprocessors; a typical car uses 50. After 50 years of rapid improvement, since 2000 progress has stalled, primarily because the transistors consume too much energy when they switch. As transistors are made smaller, more fit on a chip, and the energy consumed increases. The battery is drained quickly and chip becomes hot. Slowing the switching reduces heating, but then the software runs slowly. In this program, a new transistor design will be investigated. If successful, these transistors will consume 100 times less switching energy, allowing faster, more powerful chips. The challenge is the power supply voltage; reducing the voltage by 2:1 reduces the switching energy 4:1. Between ~1990-2005, voltages were reduced from 5 to 1 Volt. Unfortunately, with normal (MOS) transistor switches, below ~0.7 Volts the transistor's switching becomes imperfect, with the transistor not turning completely off. This finite off-state leakage current increases energy consumption, hence it has not been possible to supplies much below 0.7 Volts. Ten years ago, tunnel transistors were proposed, as these can turn off nearly completely even at supplies as low as 0.3 Volts. Unfortunately, tunnel transistors do not turn on well, and microprocessors using them will therefore operate slowly. This limitation becomes much worse if the supply is dropped to 0.1 Volts. This program will research a new design, the triple-heterojunction tunnel transistor. This has added semiconductor junction layers which increased the on-current by as much as 100:1. If successful, rapidly-switching microprocessors will be feasible with even a 0.07V supply, and would consume as little as 1% of the energy of today's technology.

包含数十亿个晶体管开关的微处理器是PC，手机，计算机服务器的核心，回答我们的互联网搜索的计算机服务器以及对天气并设计新药和飞机的超级计算机。现代机械由微处理器控制；一辆典型的汽车使用50。经过50年的快速改善，自2000年的进度停滞以来，主要是因为晶体管切换时会消耗过多的能量。 随着晶体管变小，更适合芯片，并且消耗的能量增加。电池很快排出，芯片变热。减慢开关会减少加热，但随后软件运行缓慢。在此程序中，将研究新的晶体管设计。如果成功的话，这些晶体管将消耗100倍的开关能量，从而更快，更强大的芯片。挑战是电源电压；将电压降低2：1可降低开关能量4：1。 在〜1990-2005之间，电压从5伏降低到1伏。不幸的是，随着正常（MOS）晶体管开关（低于0.7伏），晶体管的开关变得不完美，晶体管没有完全关闭。 这种有限的州外泄漏电流增加了能源消耗，因此不可能提供低于0.7伏的能源。十年前，提出了隧道晶体管，因为这些晶体管几乎可以完全关闭，即使在低至0.3伏特的供应处也可以完全关闭。不幸的是，隧道晶体管无法很好地打开，因此使用它们的微处理器会缓慢运行。如果供应量降至0.1伏，此限制会变得更糟。 该程序将研究一种新的设计，即三连接隧道晶体管。这增加了半导体连接层，从而增加了高达100：1的电流。如果成功，快速开关的微处理器甚至可以使用0.07V的供应，并且将消耗到当今技术的能量的1％。

项目成果

Confined lateral epitaxial overgrowth of InGaAs: Mechanisms and electronic properties

• DOI: 10.1063/5.0050802
• 发表时间: 2021-08
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: A. Goswami;B. Markman;S. Brunelli;S. Chatterjee;J. Klamkin;M. Rodwell;C. Palmstrøm

Towards Horizontal Heterojunctions for Tunnel Field Effect Transistors with Template Assisted Selective Epitaxy via MOCVD

通过 MOCVD 进行模板辅助选择性外延，实现隧道场效应晶体管的水平异质结

• 发表时间: 2018
• 期刊: International conference on MOVPE
• 作者: Brunelli, Simone;Markman, B;Tseng, HY;Goswami, A;Rodwell, M;Palmstrøm, P;Klamkin, K
• 通讯作者: Klamkin, K

InP MOSFETs Exhibiting Record 70 mV/dec Subthreshold Swing

InP MOSFET 呈现创纪录的 70 mV/dec 亚阈值摆幅

• 发表时间: 2019
• 期刊: 2019 IEEE Device Research Conference
• 作者: Tseng, Hsin-Ying;Fang, Yihao;Zhong, Shibo;Rodwell, Mark
• 通讯作者: Rodwell, Mark

Atomic layer deposition of TiN/Ru gate in InP MOSFETs

InP MOSFET 中 TiN/Ru 栅极的原子层沉积

• DOI: 10.1063/5.0058825
• 发表时间: 2021
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Tseng, Hsin-Ying;Fang, Yihao;Mitchell, William James;Taylor, Aidan Arthur;Rodwell, Mark J.
• 通讯作者: Rodwell, Mark J.