E2CDA: Type I: Collaborative Research: A Fast 70mV Transistor Technology for Ultra-Low-Energy Computing

E2CDA：类型 I：协作研究：用于超低能耗计算的快速 70mV 晶体管技术

基本信息

批准号：
1640030
负责人：
Mark Rodwell
金额：
$ 206.55万
依托单位：
University of California-Santa Barbara
依托单位国家：
美国
项目类别：
Continuing Grant
财政年份：
2016
资助国家：
美国
起止时间：
2016-10-01 至 2021-09-30
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=1640030&HistoricalAwards=false
关键词：
E2CDA Type Collaborative Research Fast

项目摘要

Microprocessors containing billions of transistor switches are at the heart of PCs, cell phones, computer servers answering our internet searches, and supercomputers modeling the weather and designing new drugs and aircraft. Modern machinery is controlled by microprocessors; a typical car uses 50. After 50 years of rapid improvement, since 2000 progress has stalled, primarily because the transistors consume too much energy when they switch. As transistors are made smaller, more fit on a chip, and the energy consumed increases. The battery is drained quickly and chip becomes hot. Slowing the switching reduces heating, but then the software runs slowly. In this program, a new transistor design will be investigated. If successful, these transistors will consume 100 times less switching energy, allowing faster, more powerful chips. The challenge is the power supply voltage; reducing the voltage by 2:1 reduces the switching energy 4:1. Between ~1990-2005, voltages were reduced from 5 to 1 Volt. Unfortunately, with normal (MOS) transistor switches, below ~0.7 Volts the transistor's switching becomes imperfect, with the transistor not turning completely off. This finite off-state leakage current increases energy consumption, hence it has not been possible to supplies much below 0.7 Volts. Ten years ago, tunnel transistors were proposed, as these can turn off nearly completely even at supplies as low as 0.3 Volts. Unfortunately, tunnel transistors do not turn on well, and microprocessors using them will therefore operate slowly. This limitation becomes much worse if the supply is dropped to 0.1 Volts. This program will research a new design, the triple-heterojunction tunnel transistor. This has added semiconductor junction layers which increased the on-current by as much as 100:1. If successful, rapidly-switching microprocessors will be feasible with even a 0.07V supply, and would consume as little as 1% of the energy of today's technology.

包含数十亿个晶体管开关的微处理器是个人电脑、手机、回答我们互联网搜索的计算机服务器以及模拟天气和设计新药物和飞机的超级计算机的核心。现代机械由微处理器控制；一辆典型的汽车使用 50 个。经过 50 年的快速改进，自 2000 年以来进展已经停滞，主要是因为晶体管在开关时消耗了太多能量。随着晶体管变得更小、更适合芯片，消耗的能量也随之增加。电池很快耗尽并且芯片变热。减慢切换速度可以减少热量，但软件运行速度会变慢。在此计划中，将研究一种新的晶体管设计。如果成功，这些晶体管消耗的开关能量将减少 100 倍，从而实现更快、更强大的芯片。挑战在于电源电压；电压降低 2:1，开关能量降低 4:1。 1990 年至 2005 年间，电压从 5 伏降低至 1 伏。不幸的是，对于普通 (MOS) 晶体管开关，低于 ~0.7 伏时，晶体管的开关变得不完美，晶体管不会完全关闭。这种有限的断态漏电流会增加能耗，因此不可能提供远低于 0.7 伏的电压。十年前，人们提出了隧道晶体管，因为即使电源电压低至 0.3 伏，隧道晶体管也能几乎完全关闭。不幸的是，隧道晶体管不能很好地导通，因此使用它们的微处理器会运行缓慢。如果电源电压降至 0.1 伏，这种限制会变得更加严重。该项目将研究一种新设计，即三重异质结隧道晶体管。这增加了半导体结层，使导通电流增加了 100:1。如果成功，快速开关微处理器即使使用 0.07V 的电源也将是可行的，并且消耗的能量仅为当今技术的 1%。

项目成果

期刊论文数量（5）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Confined lateral epitaxial overgrowth of InGaAs: Mechanisms and electronic properties

DOI：
10.1063/5.0050802
发表时间：
2021-08
期刊：
Journal of Applied Physics
影响因子：
3.2
作者：
A. Goswami;B. Markman;S. Brunelli;S. Chatterjee;J. Klamkin;M. Rodwell;C. Palmstrøm
通讯作者：
A. Goswami;B. Markman;S. Brunelli;S. Chatterjee;J. Klamkin;M. Rodwell;C. Palmstrøm

Towards Horizontal Heterojunctions for Tunnel Field Effect Transistors with Template Assisted Selective Epitaxy via MOCVD

通过 MOCVD 进行模板辅助选择性外延，实现隧道场效应晶体管的水平异质结

DOI：
发表时间：
2018
期刊：
International conference on MOVPE
影响因子：
0
作者：
Brunelli, Simone;Markman, B;Tseng, HY;Goswami, A;Rodwell, M;Palmstrøm, P;Klamkin, K
通讯作者：
Klamkin, K

InP MOSFETs Exhibiting Record 70 mV/dec Subthreshold Swing

InP MOSFET 呈现创纪录的 70 mV/dec 亚阈值摆幅

DOI：
发表时间：
2019
期刊：
2019 IEEE Device Research Conference
影响因子：
0
作者：
Tseng, Hsin-Ying;Fang, Yihao;Zhong, Shibo;Rodwell, Mark
通讯作者：
Rodwell, Mark

Atomic layer deposition of TiN/Ru gate in InP MOSFETs

InP MOSFET 中 TiN/Ru 栅极的原子层沉积

DOI：
10.1063/5.0058825
发表时间：
2021
期刊：
Applied Physics Letters
影响因子：
4
作者：
Tseng, Hsin-Ying;Fang, Yihao;Mitchell, William James;Taylor, Aidan Arthur;Rodwell, Mark J.
通讯作者：
Rodwell, Mark J.