Collaborative Research: Development of Optoelectronic Devices for the Far-Infrared

合作研究:远红外光电器件的开发

基本信息

  • 批准号:
    1609912
  • 负责人:
  • 金额:
    $ 21.65万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2016
  • 资助国家:
    美国
  • 起止时间:
    2016-08-15 至 2020-07-31
  • 项目状态:
    已结题

项目摘要

Title: Development of Optoelectronic Devices for the Far-InfraredGeneral Abstract: The objective of this research effort is to develop optical materials and devices that control and emit far-infrared (far-IR) light with wavelengths between 20-60microns. There are a number of important applications for light in this wavelength range, ranging from imaging for astronomy and cosmology efforts and sensing of aromatic hydrocarbons, asphaltenes, and biological materials. However, the far-IR is an extremely challenging wavelength range to work in, with little to no optical infrastructure for either conducting fundamental research or developing optical devices and systems, making the far-IR arguably one of the few remaining frontiers of the electromagnetic spectrum. The challenges of the far-IR largely stem from the lattice vibrations (phonons) of most of the semiconductors used for optoelectronic devices across the electromagnetic spectrum. In the far-IR, phonons strongly absorb light and conventional device designs are no longer appropriate. In this program we will look to harness these lattice vibrations and utilize them to generate electromagnetic radiation, or light. In doing so, we will develop an architecture for engineering designer far-IR materials and emitters that incorporate unique light-matter interactions in an oft-neglected portion of the optical spectrum, resulting in an optical toolkit for the far-IR and a new generation of optical devices. At the same time, we will undertake both educational and outreach efforts, as well as a coherent effort to grow the visibility and impact of far-IR optoelectronics research, which has no agreed-upon dissemination systems (journals, conferences, workshops), commercial vendors, or even nomenclature. Technical Abstract: Technological developments over the past several decades have significantly increased our ability to generate, control, and detect electromagnetic (EM) radiation across an ever-increasing range of wavelengths. Much of this progress has been spurred by the rapid growth of semiconductor optoelectronic technologies. Yet the far-infrared (far-IR, 20-60 ìm) wavelength range has not shared in this explosive growth. Ironically, a primary reason for the lack of progress in the far-IR lies in the semiconductor crystal lattice itself: characteristic vibrations of the lattice, known as phonons, interact strongly with far-IR light and result in strong optical absorption. This program aims to explore and develop a set of technologies, materials, and phenomena which will serve as the technical foundation of an optical infrastructure for the largely undeveloped far-IR wavelength range. In particular, we propose to develop optical materials and opto-phononic-electronic (OPE) devices that control and emit far-IR light by engineering electronic transport, surface waves, and the interaction of these surface waves with bulk optical phonons. In doing so, we will develop an architecture for engineering designer far-IR materials and OPE emitters that incorporate unique light-matter interactions in an oft-neglected portion of the optical spectrum, resulting in an optical toolkit for the far-IR and a new generation of optical devices. Concurrent with the technical thrusts of the proposed effort, we will: i) bring STEM-based activities into K12 classrooms and after-school programs and ii) work to cultivate an intellectual community with a shared interest in the far-IR by means of virtual communities and special issues in peer-reviewed publications.
标题:远红外光电器件的开发一般摘要:这项研究工作的目标是开发控制和发射波长在 20-60 微米之间的远红外 (far-IR) 光的光学材料和器件。光在该波长范围内的重要应用,包括天文学和宇宙学成像以及芳香烃、沥青质和生物材料的传感。然而,远红外是一种极其重要的应用。工作波长范围具有挑战性,几乎没有光学基础设施来进行基础研究或开发光学设备和系统,这使得远红外成为电磁频谱中为数不多的剩余前沿领域之一。源于大多数用于整个电磁频谱的光电器件的半导体的晶格振动(声子),在远红外中,声子强烈吸收光,而传统的器件设计不再适用。利用这些晶格振动并利用它们产生电磁辐射或光,在此过程中,我们将为工程设计师开发一种远红外材料和发射器的架构,将独特的光与物质相互作用融入光谱中经常被忽视的部分。 ,从而产生远红外光学工具包和新一代光学设备。同时,我们将开展教育和推广工作,并共同努力提高远红外的知名度和影响力。光电子研究,没有商定的传播系统(期刊、会议、研讨会)、商业供应商,甚至术语。技术摘要:过去几十年的技术发展显着提高了我们产生、控制和检测电磁波的能力。这种进步很大程度上是由半导体光电技术的快速发展推动的。 20-60 µm)波长范围并没有在这种爆炸性增长中得到强烈的共享,具有讽刺意味的是,远红外技术缺乏进展的主要原因在于半导体晶格本身:晶格的特征振动(称为声子)相互作用。该项目旨在探索和开发一套技术、材料和现象,作为很大程度上未开发的远红外波长范围的光学基础设施的技术基础。特别是,我们建议开发光学材料和光声电子(OPE)器件,通过设计电子传输、表面波以及这些表面波与体光学声子的相互作用来控制和发射远红外光。我们将为工程设计师开发一种远红外材料和 OPE 发射器的架构,将独特的光与物质相互作用融入到光谱中经常被忽视的部分,从而形成用于远红外和新一代光学设备的光学工具包。在拟议工作的技术主旨的同时,我们将:i) 将基于 STEM 的活动带入 K12 课堂和课外项目,ii) 努力通过虚拟方式培养对远红外有共同兴趣的知识社区。同行评审出版物中的社区和特殊问题。

项目成果

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Daniel Wasserman其他文献

Anterior capsular tears and loop fixation of posterior chamber intraocular lenses.
前囊撕裂和后房型人工晶状体环固定。
  • DOI:
  • 发表时间:
    1991
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Daniel Wasserman;David J. Apple;V. E. Castaneda;J. Tsai;Robin C. Morgan;E. Assia
  • 通讯作者:
    E. Assia
Loss mechanisms in mid-infrared extraordinary optical transmission gratings.
中红外非凡光传输光栅的损耗机制。
  • DOI:
  • 发表时间:
    2009
  • 期刊:
  • 影响因子:
    3.8
  • 作者:
    T. Ribaudo;B. Passmore;K. Freitas;E. Shaner;J. Cederberg;Daniel Wasserman
  • 通讯作者:
    Daniel Wasserman
High-Performance Quantum Cascade Lasers: Optimized Design Through Waveguide and Thermal Modeling
高性能量子级联激光器:通过波导和热建模优化设计
Plasmon-enhanced distributed Bragg reflectors
等离子增强分布式布拉格反射器
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Morgan Bergthold;Daniel Wasserman;A. Muhowski
  • 通讯作者:
    A. Muhowski
Enhanced Emission from Ultra-Thin Long Wavelength Infrared Superlattices on Epitaxial Plasmonic Materials
外延等离子体材料上超薄长波长红外超晶格的增强发射

Daniel Wasserman的其他文献

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{{ truncateString('Daniel Wasserman', 18)}}的其他基金

Conference: The Electronic Materials Conference
会议:电子材料会议
  • 批准号:
    2414428
  • 财政年份:
    2024
  • 资助金额:
    $ 21.65万
  • 项目类别:
    Standard Grant
Broadening Participation in the 2023 Electronic Materials Conference
扩大2023年电子材料会议参与范围
  • 批准号:
    2316747
  • 财政年份:
    2023
  • 资助金额:
    $ 21.65万
  • 项目类别:
    Standard Grant
Broadening Participation in the 2022 Electronic Materials Conference
扩大2022年电子材料会议参与范围
  • 批准号:
    2219635
  • 财政年份:
    2022
  • 资助金额:
    $ 21.65万
  • 项目类别:
    Standard Grant
Collaborative Research: DMREF: Transforming Photonics and Electronics with Digital Alloy Materials
合作研究:DMREF:用数字合金材料改变光子学和电子学
  • 批准号:
    2119302
  • 财政年份:
    2021
  • 资助金额:
    $ 21.65万
  • 项目类别:
    Standard Grant
Electronic Materials Conference
电子材料会议
  • 批准号:
    2120668
  • 财政年份:
    2021
  • 资助金额:
    $ 21.65万
  • 项目类别:
    Standard Grant
Collaborative research: Mid-IR Photonic Funnels: Coupling, emitting, and re-shaping mid-IR photons in the nano-world
合作研究:中红外光子漏斗:在纳米世界中耦合、发射和重塑中红外光子
  • 批准号:
    2004422
  • 财政年份:
    2020
  • 资助金额:
    $ 21.65万
  • 项目类别:
    Continuing Grant
All-Semiconductor Enhanced Efficiency Plasmonic Mid-IR Emitters
全半导体增强效率等离激元中红外发射器
  • 批准号:
    1926187
  • 财政年份:
    2019
  • 资助金额:
    $ 21.65万
  • 项目类别:
    Standard Grant
Collaborative Research: Intersubband transitions and devices in non-polar strain-compensated InGaN/AlGaN
合作研究:非极性应变补偿 InGaN/AlGaN 中的子带间跃迁和器件
  • 批准号:
    1810318
  • 财政年份:
    2018
  • 资助金额:
    $ 21.65万
  • 项目类别:
    Standard Grant
Materials World Network: Collaborative Proposal: Understanding the Optical Response of Designer Epsilon Near Zero Materials
材料世界网络:协作提案:了解设计师 Epsilon 近零材料的光学响应
  • 批准号:
    1711849
  • 财政年份:
    2016
  • 资助金额:
    $ 21.65万
  • 项目类别:
    Continuing Grant
Collaborative Research: A Roadmap Toward Terahertz Optoelectronics Using Active Control of Charge Density Waves at Degenerate Semiconductor Interfaces
合作研究:利用简并半导体界面电荷密度波的主动控制实现太赫兹光电子学的路线图
  • 批准号:
    1611231
  • 财政年份:
    2016
  • 资助金额:
    $ 21.65万
  • 项目类别:
    Standard Grant

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