A Path Towards III-Nitrides-Based Superjunction Devices

通向 III 族氮化物超结器件的道路

• 批准号: 1610992
• 负责人: Zlatko Sitar
• 金额: $ 38万
• 依托单位: North Carolina State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2016
• 资助国家: 美国
• 起止时间: 2016-08-01 至 2020-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1610992&HistoricalAwards=false
• 关键词: Path; Towards; III; Nitrides; Based

The demand for high power switches for various classical and renewable energy applications is increasing exponentially. The proposed research will provide for a transformative and disruptive technology for power electronics that will go well beyond classical semiconductor materials limits and lead to unprecedented switching power densities and reliability beyond the Si-based technology. The successful demonstration of such disruptive technology would revolutionize energy switching and transmission, energy storage, and related applications in electrical motor drives and other power-intensive applications. This research will have a direct impact on the materials and devices that will be used for applications that deal with the preservation and extension of natural resources by allowing for an efficient use and transmission of electrical energy, availability of clean potable water through disinfection by the use of UV, and the detection of pollutants and other effluents. This program will provide the opportunity to educate the next generation of engineers capable of out-of-the-box thinking and will support one PhD student, and a part-time undergraduate assistant and post-doctoral researcher. The novel concepts developed within this project will be implemented in the educational and outreach efforts, especially integrating characterization and process control schemes to applications dealing with materials needed for sustainability, preservation and extension of our natural resources. Current GaN-based power device designs focus on simple Schottky and p-i-n diodes. New technological breakthroughs are needed that are not limited by the classical materials figure of merit. Superjunctions are lateral devices that surpass the materials figure of merit limit by attaining full compensation under the reverse bias and very low on-resistance under the forward bias, i.e., they behave as dielectrics in one direction and as conductors in the other. Although Si-based superjunctions are a mature technology, known as CoolMos, no superjunctions have been attempted in wide bandgap materials because of the exceptional technological challenges. Recent technological advances in the growth of lateral polar structures and newly developed doping control schemes bridge the missing technological gap and provide a new path for GaN-based superjunction technology that does not rely on re-growth and ion implantation technologies, which have been unsuccessful in III-nitrides although they are routinely used in the Si technology. These devices will eventually allow for significant breakdown voltages exceeding 5 kV and low on-resistance. This research will establish growth technology for both, vertical n-type and p-type thick drift region junctions based on controllable, simultaneous growth of N-polar and Ga-polar GaN domains, with the associated low doping levels in the range of 10'16 to 10'17 cm-3 for complete depletion. The ability to grow and to control doping in p- and n-doped domains side-by-side will establish a pathway for the design of superjunction device structures and demonstrate superjunctions with breakdown voltages exceeding 1200 V and 500% better performance than predicted by the Baliga's figure of merit. Furthermore, this research will provide a transformative and disruptive technology for a new generation of devices whose architecture is not limited by the classical growth and processing approaches.

对各种经典和可再生能源应用的高功率开关的需求呈指数增长。拟议的研究将为电力电子产品提供一种变革性和破坏性的技术，该技术将远远超出经典的半导体材料限制，并导致基于SI的技术以外的空前的开关电源密度和可靠性。这种破坏性技术的成功演示将彻底改变电动机驱动器和其他电力密集型应用中的能源开关和传输，能源存储以及相关应用。这项研究将直接影响材料和设备，这些材料和设备将通过允许有效利用和传输电气，通过使用通过使用消毒来实现可用于保护和扩展自然资源的应用。紫外线，以及污染物和其他废水的检测。该计划将提供机会，教育能够开箱即用的思维的下一代工程师，并支持一位博士生，以及一名兼职本科助理和博士后研究员。该项目中开发的新颖概念将在教育和推广工作中实施，尤其是将表征和过程控制方案整合到处理可持续性，保护和扩展我们自然资源所需的材料的应用中。当前基于GAN的电源设备的设计集中在简单的Schottky和P-I-N Diodes上。需要新的技术突破，而不受经典材料的功绩限制。超界点是通过在反向偏置下获得全额补偿和向前偏置下的抗性非常低的材料数字的横向设备，即它们在一个方向上以介电性的作用，而在另一个方向上则表现为介电。尽管基于SI的超界面是一种成熟的技术，称为CoolMos，但由于具有出色的技术挑战，因此在宽带式材料中未尝试过超界面。横向极性结构和新开发的兴奋剂控制方案的最新技术进步弥合了缺失的技术差距，并为基于GAN的超级结构技术提供了新的途径，该技术不依赖于重新生长和离子植入技术，这些技术在III-硝酸盐尽管通常用于SI技术。这些设备最终将允许超过5 kV的明显故障电压和低抗性。这项研究将基于可控制的，同时的N极性和GA极性GAN结构域的垂直N型和P型厚漂移区域连接的增长技术，相关的低掺杂水平在10'范围内，相关的低掺杂水平。 16至10'17 cm-3用于完全耗竭。在P和N掺杂域中生长和控制掺杂的能力并排建立一个设计超键器设备结构的途径，并证明超过1200 V和比预测的超过1200 V和500％的性能超过500％ Baliga的功绩。此外，这项研究将为新一代设备提供一种变革性和破坏性的技术，其建筑不受经典的增长和处理方法的限制。