DMREF: Collaborative Research: Extreme Bandgap Semiconductors

DMREF：协作研究：极限带隙半导体

• 批准号: 1534303
• 负责人: Debdeep Jena
• 金额: $ 84万
• 依托单位: Cornell University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2015
• 资助国家: 美国
• 起止时间: 2015-10-01 至 2019-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1534303&HistoricalAwards=false
• 关键词: DMREF; Collaborative; Research; Extreme; Bandgap

DMREF: Collaborative Research: Extreme Bandgap SemiconductorsNon-technical Description: The last two decades witnessed revolutionary advances in electronics and photonics by moving from ~1 electron Volt gap semiconductors (Silicon, Gallium Arsenide) to ~3 electron Volt Gallium Nitride and Silicon Carbide. This enabled energy-efficient light emitting diodes as replacement of incandescent bulbs, high-voltage transistors that are cutting down wasted energy in electrical devices and machinery, and significantly expanded our fundamental knowledge of the materials science of semiconductors. Similar major advances are expected by aiming at extreme-bandgap semiconductors with energy gaps almost twice of that of the wide-bandgap semiconductors. In addition to the new science, such materials should enable advances in healthcare and monitoring by creating deep-ultraviolet light-emitting diodes and lasers, and by significantly improving the efficiency and capability of semiconductors for electrical power conversion. Technical Description: Investigation of extreme-bandgap semiconductor materials with gaps of ~5-6 electron Volts has the potential to seed vast application arenas, and simultaneously advance the fundamental materials science and the physics of materials. The goal of this proposal is to develop the materials science of extreme bandgap semiconductors: Boron Nitride, Aluminum Nitride, their alloys and their heterostructures, and to investigate their properties for future applications in power electronics, deep-ultraviolet emitters, and more. Guided by rigorous mathematical and first-principles theory and modeling, the 4-investigator team will explore fundamental questions regarding epitaxial growth, polarization-induced conductivity control, band anti-crossing in highly mismatched materials, effects of isotope engineering on electronic and thermal transport. The proposed research project has the potential to be transformative in the field of materials science and condensed matter physics under the umbrella of the Materials Genome Initiative because the research thrusts will develop: first-principles predictive theory of electronic, optical, and thermal properties of these materials, epitaxy of these new semiconductors, isotope alloys and heterostructures, novel methods for controlling conductivity, understanding and control of the interplay of competing 3-dimensional vs 2-dimensional crystal phases, understanding of ultra high-field optical, electronic, thermal phenomena, of cation band-anticrossing physics, novel paradigms of isotope (neutron) engineering of optoelectronic, solid-state qubit, Cooper pairs, and thermoelectric properties. The proposed project will result in the training of graduate students in a fascinating emerging field of extreme bandgap semiconductor material science, with their many fundamental electronic, optical, and thermoelectric properties. In addition to expanding existing outreach programs, new activities with a special focus on high-school students and underrepresented groups via Research Experiences for Teachers programs and direct visits for in-class demonstrations are proposed. That the team is distributed between Cornell, Michigan, and Stanford with complementary expertise will be exploited by regular exchange of graduate students for experiments, as well as theory and modeling work, to foster a truly collaborative mindset in the project. The dissemination of research by journal publications, presentations at conferences, its inclusion in courses taught by the invsetigators, and online (e.g. nanoHub) will make possible the outreach of the research results to the widest possible audience.

DMREF：协作研究：极限带隙半导体非技术描述：过去二十年见证了电子学和光子学领域的革命性进步，从约 1 电子伏特间隙半导体（硅、砷化镓）发展到约 3 电子伏特氮化镓和碳化硅。这使得节能发光二极管能够替代白炽灯泡和高压晶体管，从而减少电气设备和机械中的能源浪费，并显着扩展了我们对半导体材料科学的基础知识。 通过针对能隙几乎是宽带隙半导体两倍的极端带隙半导体，预计也会取得类似的重大进展。 除了新科学之外，此类材料还应通过制造深紫外发光二极管和激光器，以及显着提高半导体电力转换的效率和能力，推动医疗保健和监测领域的进步。 技术描述：对带隙约为 5-6 电子伏特的极端带隙半导体材料的研究有可能催生广阔的应用领域，并同时推进基础材料科学和材料物理学的发展。 该提案的目标是发展极端带隙半导体的材料科学：氮化硼、氮化铝、它们的合金和异质结构，并研究它们在电力电子、深紫外发射器等领域未来应用的特性。在严格的数学和第一原理理论和建模的指导下，由 4 名研究人员组成的团队将探索有关外延生长、极化诱导电导率控制、高度失配材料中的能带反交叉、同位素工程对电子和热传输的影响等基本问题。 拟议的研究项目有可能在材料基因组计划的保护下对材料科学和凝聚态物理领域产生变革，因为研究重点将发展：这些材料的电子、光学和热性质的第一原理预测理论材料、这些新型半导体的外延、同位素合金和异质结构、控制电导率的新方法、理解和控制竞争的 3 维与 2 维晶相的相互作用、理解超高场光学、电子、热现象、阳离子带反交叉物理、光电同位素（中子）工程的新范式、固态量子位、库珀对和热电特性。拟议的项目将在极端带隙半导体材料科学这一令人着迷的新兴领域对研究生进行培训，该领域具有许多基本的电子、光学和热电特性。除了扩大现有的外展计划外，还建议通过教师研究经验计划和直接参观课堂演示等方式，特别关注高中生和代表性不足群体的新活动。该团队分布在密歇根州康奈尔大学和斯坦福大学之间，具有互补的专业知识，将通过定期交换研究生进行实验以及理论和建模工作来利用，以在项目中培养真正的协作思维。通过期刊出版物、会议演讲、研究人员教授的课程以及在线（例如 nanoHub）传播研究成果，将使研究成果向尽可能广泛的受众传播。