Atomic structure and electronic properties of silicide nanowires

硅化物纳米线的原子结构和电子特性

• 批准号: 221711438
• 负责人: Professor Dr. Mario Dähne
• 金额: --
• 依托单位: Institut für Festkörperphysik
• 依托单位国家: 德国
• 项目类别: Research Units
• 财政年份: 2012
• 资助国家: 德国
• 起止时间: 2011-12-31 至 2023-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/221711438?language=en
• 关键词: Atomic; structure; electronic; properties; silicide

This project focuses on the atomic structure and electronic properties of rare earth and transition metal silicide nanowires formed on Si surfaces. The atomic structure is characterized using scanning tunneling microscopy, grazing incidence x-ray diffraction, and low-energy electron diffraction, also with spot-profile analysis and with intensity-voltage analysis. Angle-resolved photoelectron spectroscopy and scanning tunneling spectroscopy are applied for studying the (local) electronic properties. Two strategies for the selforganized nanowire formation are applied, using anisotropic strain of the grown silicides as well as anisotropic substrates. In the first funding period, the work concentrated on rare earth silicide nanowires on the planar and vicinal Si(001) surfaces as well as on corresponding nanostructures on the Si(111) surface. In the second funding period, the focus will shift to rare earth silicide nanowires on anisotropic and vicinal Si surfaces. In addition, alternative material systems such as transition metal nanowires will be studied. For these novel nanowire systems, the growth conditions will be optimized, in particular to obtain sufficiently thin silicide nanowires with corresponding one-dimensional electronic properties. Then the atomic structure and electronic properties will be studied in detail, also for capped nanowires. Moreover, elemental nanowire systems such as Au on Si(111) and Ge(001) will be studied. In addition, optical studies, transport experiments, and theoretical modeling will be performed in cooperating projects in this research group in order to obtain a throughout understanding of the physical properties of the nanowire systems.

该项目着重于Si表面形成的稀土和过渡金属硅纳米线的原子结构和电子特性。原子结构使用扫描隧道显微镜，放牧发动机X射线衍射和低能电子衍射来表征原子结构，并通过斑点分析以及强度 - 电压分析。角度分辨的光电子光谱和扫描隧道光谱法用于研究（局部）电子特性。使用种植的硅化剂和各向异性底物的各向异性应变，采用了两种自相组织的纳米线形成策略。在第一个资金期间，该工作集中在平面和副SI（001）表面上的稀土硅纳米线上，以及Si（111）表面上的相应纳米结构。在第二个资金期间，重点将转移到各向异性和情况Si表面上的稀土硅纳米线。此外，还将研究替代物质系统，例如过渡金属纳米线。对于这些新型的纳米线系统，将优化生长条件，特别是为了获得具有相应一维电子特性的足够薄的硅纳米线。然后，将详细研究原子结构和电子性能，也将用于限制的纳米线。此外，将研究SI（111）和GE（001）等元素纳米线系统。此外，将在该研究小组中的项目合作中进行光学研究，运输实验和理论建模，以便获得对纳米线系统物理特性的整个理解。