Emergent Phenomena at Flat Interfaces between Nitrides and Oxides

氮化物和氧化物之间平面界面处的突现现象

• 批准号: 1508191
• 负责人: Jon-Paul Maria
• 金额: $ 46.8万
• 依托单位: North Carolina State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2015
• 资助国家: 美国
• 起止时间: 2015-08-01 至 2019-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1508191&HistoricalAwards=false
• 关键词: Emergent; Phenomena; Flat; Interfaces; between

This project is supported by the Electronic and Photonic Materials Program and by the Ceramics Program, both in the Division of Materials Research.Nontechnical Description: The NCSU (North Carolina State University) research team of Maria and Sitar explores the junction of nitride and oxide semiconductors with specific attention to the interfaces that bond them. When correctly prepared, these interfaces can host a high concentration of high-speed electrons that are confined to a two-dimensional layer. This new type of material is designed to have controllable electron density at the interface and opens new possibilities for future electronic devices. The research project involves graduate undergraduate students. The team disseminates the research findings through various educational outreach activities. For example, the annual NCSU Science and Mathematics Interactive Learning Experience (SMILE) camp engages middle-school and advanced fifth grade students to explore the principles of materials science in the PIs' research labs.Technical Description: The Maria and Sitar research team explores semiconductor-grade heteroepitaxial interfaces between complex oxides (e.g., MgO-CaO) and GaN. The properties and performance of these heterostructures are regulated by the electronic structure of the constituent crystals as opposed to unwanted defects, structural imperfections, or undesired chemical interactions. Seamless integration across two classes of materials is expected to create pathways to intimately couple their properties. To accomplish these goals, the team combines two advanced materials synthesis methods: surfactant-assisted film growth and confined epitaxy. Surfactant assisted growth overcomes the challenges of oxide faceting, while confined epitaxy creates step-free surfaces and thus perfectly flat interfaces. Using these approaches, the team is positioned to superimpose high room-temperature carrier mobility in compound semiconductors with nonlinear property responses of electronic oxides. This unique oxide/nitride heterostructure provides access to a new frontier of electronic, magnetic, optical, and interface physics.

该项目得到了电子和光子材料计划和陶瓷计划的支持。正确制备后，这些界面可以容纳限制在二维层的高浓度的高速电子。这种新型的材料旨在在界面处具有可控的电子密度，并为将来的电子设备打开了新的可能性。该研究项目涉及毕业生的本科生。团队通过各种教育外展活动传播研究结果。例如，年度NCSU科学与数学交互式学习经验（Smile）营地与中学和高级五年级学生探索PIS研究实验室中的材料科学原理。技术描述：玛丽亚和西塔尔研究团队探索了玛丽亚和西塔尔研究团队，玛丽亚和西塔尔研究小组探索了半导体摩擦式异性际交往氧化物之间的氧化物（例如，氧化物之间）（例如，mgo-cao）。这些异质结构的特性和性能受组成晶体的电子结构调节，而不是不必要的缺陷，结构缺陷或不希望的化学相互作用。预计两类材料之间的无缝集成将创建途径，以与它们的性质紧密相关。为了实现这些目标，团队结合了两种先进的材料合成方法：表面活性剂辅助膜的增长和狭窄的外观。表面活性剂的辅助生长克服了氧化物刻面的挑战，而受关闭的外观延伸则产生了无逐步的表面，从而形成了完全平坦的界面。使用这些方法，该团队可以将具有电子氧化物非线性特性响应的化合物半导体中叠加高间温载载载流子迁移率。这种独特的氧化物/氮化物异质结构可访问电子，磁性，光学和界面物理的新边界。