Emergent Phenomena at Flat Interfaces between Nitrides and Oxides

氮化物和氧化物之间平面界面处的突现现象

• 批准号: 1508191
• 负责人: Jon-Paul Maria
• 金额: $ 46.8万
• 依托单位: North Carolina State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2015
• 资助国家: 美国
• 起止时间: 2015-08-01 至 2019-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1508191&HistoricalAwards=false
• 关键词: Emergent; Phenomena; Flat; Interfaces; between

This project is supported by the Electronic and Photonic Materials Program and by the Ceramics Program, both in the Division of Materials Research.Nontechnical Description: The NCSU (North Carolina State University) research team of Maria and Sitar explores the junction of nitride and oxide semiconductors with specific attention to the interfaces that bond them. When correctly prepared, these interfaces can host a high concentration of high-speed electrons that are confined to a two-dimensional layer. This new type of material is designed to have controllable electron density at the interface and opens new possibilities for future electronic devices. The research project involves graduate undergraduate students. The team disseminates the research findings through various educational outreach activities. For example, the annual NCSU Science and Mathematics Interactive Learning Experience (SMILE) camp engages middle-school and advanced fifth grade students to explore the principles of materials science in the PIs' research labs.Technical Description: The Maria and Sitar research team explores semiconductor-grade heteroepitaxial interfaces between complex oxides (e.g., MgO-CaO) and GaN. The properties and performance of these heterostructures are regulated by the electronic structure of the constituent crystals as opposed to unwanted defects, structural imperfections, or undesired chemical interactions. Seamless integration across two classes of materials is expected to create pathways to intimately couple their properties. To accomplish these goals, the team combines two advanced materials synthesis methods: surfactant-assisted film growth and confined epitaxy. Surfactant assisted growth overcomes the challenges of oxide faceting, while confined epitaxy creates step-free surfaces and thus perfectly flat interfaces. Using these approaches, the team is positioned to superimpose high room-temperature carrier mobility in compound semiconductors with nonlinear property responses of electronic oxides. This unique oxide/nitride heterostructure provides access to a new frontier of electronic, magnetic, optical, and interface physics.

该项目得到了材料研究部的电子和光子材料计划以及陶瓷计划的支持。非技术描述：NCSU（北卡罗来纳州立大学）Maria 和 Sitar 的研究团队探索了氮化物和氧化物半导体的结特别注意连接它们的接口。如果准备得当，这些界面可以容纳高浓度的高速电子，这些电子被限制在二维层中。这种新型材料的设计目的是在界面处具有可控的电子密度，并为未来的电子设备开辟了新的可能性。该研究项目涉及研究生本科生。该团队通过各种教育推广活动传播研究成果。例如，一年一度的 NCSU 科学与数学互动学习体验 (SMILE) 夏令营让中学生和五年级高年级学生在 PI 的研究实验室中探索材料科学原理。技术描述：Maria 和 Sitar 研究团队探索半导体复合氧化物（例如 MgO-CaO）和 GaN 之间的级异质外延界面。这些异质结构的性质和性能由组成晶体的电子结构调节，而不是不需要的缺陷、结构缺陷或不需要的化学相互作用。两类材料的无缝集成有望创建紧密结合其特性的途径。为了实现这些目标，该团队结合了两种先进的材料合成方法：表面活性剂辅助薄膜生长和受限外延。表面活性剂辅助生长克服了氧化物刻面的挑战，同时受限外延创造了无台阶表面，从而实现了完美平坦的界面。利用这些方法，该团队能够将化合物半导体中的高室温载流子迁移率与电子氧化物的非线性特性响应相叠加。这种独特的氧化物/氮化物异质结构提供了进入电子、磁、光学和界面物理新领域的途径。