Development of Ga2O3 Based Structures for High Power Applications

用于高功率应用的 Ga2O3 基结构的开发

• 批准号: 1506159
• 负责人: Tania Paskova
• 金额: $ 42万
• 依托单位: North Carolina State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2015
• 资助国家: 美国
• 起止时间: 2015-08-01 至 2021-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1506159&HistoricalAwards=false
• 关键词: Development; Ga2O3; Based; Structures; Power

Non-Technical Description: In the past decade, wide-bandgap semiconductor materials such as GaN have enabled a variety of optoelectronic and electronic technologies by providing new capabilities at elevated temperatures and high voltages. This research project focuses on investigating the growth and fundamental properties of gallium oxide (Ga2O3), a material that has not been extensively explored for electronics. The knowledge gained in this study leads to high-quality gallium oxide materials with a low defect density and controllable electronic properties for high-power devices. The project topic increases public awareness of the importance of novel materials for energy-efficient power electronics, essential to our future quality of life. In addition, graduate and undergraduate students are trained in materials science research, with a special emphasis on involving underrepresented groups. The project also fosters interdisciplinary collaborations at local, national and international levels and transforms fundamental materials research findings to industry.Technical Description: The scientific objective of this project is to establish the relationship between the thin-film growth and the structural and physical properties of Ga2O3. The Ga2O3 thin films are deposited using three complimentary growth techniques including pulsed laser deposition, pulsed electron deposition and metalorganic vapor phase deposition with the ultimate goal to explore its potential for power electronics. The research explores: (i) the optimum growth conditions of beta-Ga2O3 through homoepitaxy and heteroepitaxy; (ii) interface strategies for defect reduction; (iii) doping options (e.g., Si, Sn and Mg) for high incorporation efficiency and enhanced conductivities; (iv) annealing procedures for improving the structural and electrical properties; and (v) in-plane anisotropy and its effects on electrical and thermal transport properties. The study provides a fundamental understanding of the roles of defects and dopants on the overall structural and electrical properties in this wide bandgap material.

非技术描述：在过去的十年中，诸如GAN之类的宽带半导体材料（例如GAN）通过在高温和高电压下提供新的功能，从而实现了各种光电和电子技术。该研究项目着重于研究氧化韧带（GA2O3）的生长和基本特性，该材料尚未广泛探索电子产品。这项研究中获得的知识导致高质量的氧化镀铝材料具有低缺陷密度和可控制的高功率设备的电子性能。该项目主题提高了公众对新型材料对节能电力电子的重要性的认识，这对于我们未来的生活质量至关重要。此外，研究生和本科生接受了材料科学研究的培训，并特别强调涉及代表性不足的群体。该项目还促进了本地，国家和国际层面的跨学科合作，并将基本材料研究结果转化为行业。技术描述：该项目的科学目标是建立薄膜增长与GA2O3的结构和物理性质之间的关系。 GA2O3薄膜使用三种免费生长技术（包括脉冲激光沉积，脉冲电子沉积和金属有机蒸气相沉积物沉积）沉积，以探索其电力电气的潜力的最终目标。该研究探讨了：（i）通过同性恋和异性恋的β-GA2O3的最佳生长条件； （ii）减少缺陷的接口策略； （iii）用于高掺入效率和增强电导率的掺杂选项（例如SI，SN和MG）； （iv）改善结构和电气特性的退火程序； （v）平面各向异性及其对电气和热传输特性的影响。该研究提供了对这种宽带镜头材料中缺陷和掺杂剂在整体结构和电气中的作用的基本理解。