Collaborative Research: Planning Grant: I/UCRC for Next Generation Nanomaterial and Device Engineering (NGeNE)

合作研究:规划资助:I/UCRC 下一代纳米材料和器件工程 (NGeNE)

基本信息

项目摘要

The mission of the proposed Next Generation Nanomaterial and Device Engineering (NGeNE) center is to develop a science, engineering, and technology base for the rational design of next generation computers, starting from their underlying material embodiments and fundamental physical principles. To build a chip for information processing, we must explore nanoscale logic and memory, photonics for high speed on-chip communication and thermal engineering to handle energy dissipation in 3D. The NGeNE center will address all these components, along with computational modeling, scientific training and education. Various industrial sectors such as the semiconductor chip industry, optoelectronics, mobile and wireless technology, energy, photonics, chemical, biological and packaging industry, as well as the civilian and defense infrastructure, healthcare and the energy sector will directly benefit from this effort. The goal of the center will be to (a) form a critical University Industry Government nexus on emerging nanotechnology, (b) carry out industry relevant research using state of the art modeling, simulation, growth, characterization, fabrication and integration of emerging nanomaterials and devices, (c) provide a competitive edge to industry and national labs by leveraging the multi-university intellectual resources for cost effective innovative solutions to their current problems, and (d) develop supporting curricula, create databases and train students and industry affiliates with the tools and knowledge infrastructure to meet their future work force requirements.The proposed center for Next Generation Nanomaterial and Device Engineering (NGeNE) aims to form a University-Industry-Government (UIG) nexus towards the design and engineering of next generation nanomaterials and devices with an emphasis on post-CMOS computing. This will rest on four pillars: Nanoelectronics and NanoMagnetism for Logic and Memory (Computation), Thermal for power management, and Photonics for on chip communication. The research thrusts span a large phase space from novel switching schemes to non-Boolean logic, beyond silicon to advanced magnetic, thermal and photonic materials. They combine physical models with computational software, compact models and architecture, heterogeneous growth and integration, nanofabrication, characterization, testing and reliability. The goal of the center will be to (a) form a critical University Industry Government nexus on emerging nanotechnology, (b) carry out industry relevant research using state of the art modeling, simulation, growth, characterization, fabrication and integration of emerging nanomaterials and devices, (c) provide a competitive edge to industry and national labs by leveraging the multi-university intellectual resources for cost effective innovative solutions to their current problems, and (d) develop supporting curricula, create databases and train students and industry affiliates with the tools and knowledge infrastructure to meet their future work force requirements.
拟议的下一代纳米材料和设备工程(NGeNE)中心的使命是从底层材料实施例和基本物理原理出发,为下一代计算机的合理设计开发科学、工程和技术基础。为了构建用于信息处理的芯片,我们必须探索纳米级逻辑和存储器、用于高速片上通信的光子学以及用于处理 3D 能量耗散的热工程。 NGeNE 中心将解决所有这些问题,以及计算建模、科学培训和教育。半导体芯片行业、光电子、移动和无线技术、能源、光子学、化学、生物和包装行业等各个工业部门,以及民用和国防基础设施、医疗保健和能源部门将直接受益于这一努力。该中心的目标是(a)在新兴纳米技术方面形成关键的大学、行业和政府联系,(b)利用新兴纳米材料的最先进的建模、模拟、生长、表征、制​​造和集成来开展行业相关研究,以及设备,(c)通过利用多所大学的智力资源为当前问题提供具有成本效益的创新解决方案,为行业和国家实验室提供竞争优势,(d)开发支持课程,创建数据库并培训学生和行业附属机构工具和知识基础设施拟议的下一代纳米材料和设备工程中心(NGeNE)旨在形成大学-工业-政府(UIG)的联系,以设计和工程下一代纳米材料和设备,重点是后CMOS 计算。这将依赖于四大支柱:用于逻辑和存储器(计算)的纳米电子学和纳米磁学、用于电源管理的热学以及用于片上通信的光子学。研究重点跨越了一个很大的相空间,从新颖的开关方案到非布尔逻辑,从硅到先进的磁性、热和光子材料。 它们将物理模型与计算软件、紧凑模型和架构、异质生长和集成、纳米制造、表征、测试和可靠性相结合。该中心的目标是(a)在新兴纳米技术方面形成关键的大学、行业和政府联系,(b)利用新兴纳米材料的最先进的建模、模拟、生长、表征、制​​造和集成来开展行业相关研究,以及设备,(c)通过利用多所大学的智力资源为当前问题提供具有成本效益的创新解决方案,为行业和国家实验室提供竞争优势,(d)开发支持课程,创建数据库并培训学生和行业附属机构工具和知识基础设施满足他们未来的劳动力需求。

项目成果

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Mantu Hudait其他文献

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{{ truncateString('Mantu Hudait', 18)}}的其他基金

US-Ireland Joint R&D Partnership: Strained Engineered Germanium Quantum-Well Laser on GaAs and Si for Optical Coherence Tomography
美国-爱尔兰联合R
  • 批准号:
    2042079
  • 财政年份:
    2021
  • 资助金额:
    $ 1.15万
  • 项目类别:
    Standard Grant
US-Ireland R&D Partnership: Si-compatible, Strain Engineered Staggered Gap Ge(Sn)/InxGa1-xAs Nanoscale Tunnel Field Effect Transistors
美国-爱尔兰 R
  • 批准号:
    1507950
  • 财政年份:
    2015
  • 资助金额:
    $ 1.15万
  • 项目类别:
    Standard Grant
EAGER: Silicon-compatible, Crystallographic Oriented Epitaxial Germanium for New Generation of Metal-oxide Semiconductor Field-effect Transistors
EAGER:用于新一代金属氧化物半导体场效应晶体管的硅兼容、晶体取向外延锗
  • 批准号:
    1348653
  • 财政年份:
    2013
  • 资助金额:
    $ 1.15万
  • 项目类别:
    Standard Grant
Collaborative: Mixed Anion and Cation Based Transistor Architecture for Ultra-Low Power Complementary Logic Applications
协作:用于超低功耗互补逻辑应用的混合阴离子和阳离子晶体管架构
  • 批准号:
    1028494
  • 财政年份:
    2010
  • 资助金额:
    $ 1.15万
  • 项目类别:
    Standard Grant

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