"Meeting with MBE Pioneers", a Special Symposium Held at the International Conference on Molecular Beam Epitaxy, Flagstaff Arizona, September 7, 2014.

“Meeting with MBE Pioneers”，在国际分子束外延会议上举行的特别研讨会，亚利桑那州弗拉格斯塔夫，2014 年 9 月 7 日。

基本信息

批准号：
1447350
负责人：
Yong-Hang Zhang
金额：
$ 1万
依托单位：
Arizona State University
依托单位国家：
美国
项目类别：
Standard Grant
财政年份：
2014
资助国家：
美国
起止时间：
2014-09-01 至 2015-08-31
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=1447350&HistoricalAwards=false
关键词：
Meeting MBE Pioneers Special Symposium

项目摘要

The proposed project will support participation of Molecular Beam Epitaxy (MBE) of pioneers in a Symposium to be held on September 7, 2014 at the High Country Conference Center, Flagstaff, Arizona. This special Symposium will precede the International Conference on Molecular Beam Epitaxy, which will take place from September 8 to 12, 2014. The MBE conference has taken place since 1978 and has provided a prominent international forum for reporting new developments in the areas of fundamental and applied molecular beam epitaxy research.. The Symposium will foster advances in the leading research on III-V semiconductors, by gathering a diverse group of experts, researchers and students. The program provides the opportunity to learn about the latest developments in fundamental and applied MBE research, synthesis of new materials, formation of novel heterostructures, and the development of innovative devices. III-V, II-VI, IV-VI and IV semiconductors are addressed including wide bandgap materials, nanowires and quantum dots and various other novel devices. Technological advances of the semiconductors addressed in the Symposium offer the means to meet the increasing demand for higher performance devices with multiple functionalities, in support of communications and sensing applications. Further dissemination will be provided with a presentation of Symposium papers in the Journal of Crystal Growth.

拟议项目将支持分子束外延 (MBE) 先驱参加将于 2014 年 9 月 7 日在亚利桑那州弗拉格斯塔夫高地会议中心举行的研讨会。本次特别研讨会将在国际分子束外延会议之前举行，该会议将于 2014 年 9 月 8 日至 12 日举行。MBE 会议自 1978 年开始举办，为报告基础和分子束外延领域的新进展提供了一个重要的国际论坛。应用分子束外延研究.. 该研讨会将通过聚集不同的专家、研究人员和学生群体，促进 III-V 族半导体领先研究的进展。该项目提供了了解基础和应用 MBE 研究、新材料合成、新型异质结构形成以及创新器件开发的最新进展的机会。涉及 III-V、II-VI、IV-VI 和 IV 半导体，包括宽带隙材料、纳米线和量子点以及各种其他新颖器件。研讨会上讨论的半导体技术进步提供了满足对具有多种功能的更高性能设备日益增长的需求的方法，以支持通信和传感应用。进一步传播将通过《晶体生长杂志》上的研讨会论文介绍进行。