Collaborative Research: Fundamental Studies of the Properties of B-III-N Wide-Bandgap Semiconductor Alloys

合作研究：B-III-N宽带隙半导体合金性能的基础研究

基本信息

批准号：
1410874
负责人：
Russell Dupuis
金额：
$ 30万
依托单位：
Georgia Tech Research Corporation
依托单位国家：
美国
项目类别：
Continuing Grant
财政年份：
2014
资助国家：
美国
起止时间：
2014-07-01 至 2017-06-30
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=1410874&HistoricalAwards=false
关键词：
Collaborative Research Fundamental Studies Properties

项目摘要

Non-technical Description: This collaborative research project studies an underexplored semiconductor materials system that involves boron incorporation in the four-element alloys of BAlGaN. These materials are a new generation of III-V alloy system compared to the AlInGaN alloys that have been developed to provide high-efficiency lighting. The solid-state illumination and lighting technology, based upon AlInGaN alloys, has found wide practical applications in automotive, liquid-crystal-display back panel, mobile communications and signage illumination, and will soon dominate in general lighting. However, there are still important limitations for AlInGaN alloy materials. This research project explores the advantages of incorporation of boron into these alloys with the ultimate goal to achieve better strain matching in heterostructures, higher efficiency and potentially p-type doping in the new alloy system. The research is integrated with the educational activities including research training for graduate and undergraduate students in the growth, characterization, and processing of these novel materials, and various outreach programs at both Georgia Institute of Technology and Arizona State University.Technical Description: The primary focus of this research project is to study the physical, chemical, and electronic properties of high-quality thin films of boron-containing III-nitride semiconductor ternary and quaternary alloys in the technologically important range of compositions and to develop an in-depth understanding of fundamental materials science for improved optoelectronic device designs. The research team uses advanced metalorganic chemical vapor deposition (MOCVD) epitaxial film growth systems, and performs in-depth studies of the effects of growth conditions, substrate materials, substrate orientation, and doping. The materials properties are studied in detail using state-of-the-art nanoscale characterization tools: the crystal structure is studied using atomic-resolution aberration-corrected transmission electron microscopy; the electronic band structure is determined by electron holography; and the optical properties are measured by cathodoluminescence with high spatial- and temporal-resolution. Exploring the effects of compositional homogeneity, phase separation, and piezoelectric fields is also included in the research. The microstructural properties are correlated with the optoelectronic properties to understand the role of growth parameters on overall device performance.

非技术描述：该协作研究项目研究了一个涉及Balgan四元素合金中的硼掺入的不耗尽的半导体材料系统。与已开发的旨在提供高效照明的Alingan合金相比，这些材料是新一代III-V合金系统。基于Alingan合金的固态照明和照明技术在汽车，液体 - 晶体隔离式背面板，移动通信和标牌照明中发现了广泛的实用应用，并将在一般照明中很快占主导地位。但是，阿林加合金材料仍然存在重要的局限性。该研究项目探讨了将硼掺入这些合金的优势，其最终目标是在异质结构中获得更好的应变匹配，提高效率和新合金系统中潜在的P型掺杂。 The research is integrated with the educational activities including research training for graduate and undergraduate students in the growth, characterization, and processing of these novel materials, and various outreach programs at both Georgia Institute of Technology and Arizona State University.Technical Description: The primary focus of this research project is to study the physical, chemical, and electronic properties of high-quality thin films of boron-containing III-nitride semiconductor ternary and在技术上重要的组成范围内的第四级合金，并深入了解基本材料科学，以改善光电设备设计。研究小组使用高级金属有机化学蒸气沉积（MOCVD）外延膜增长系统，并对生长条件，底物材料，底物方向和兴奋剂的影响进行深入研究。使用最先进的纳米级表征工具对材料特性进行了详细的研究：使用原子分辨率像差校正的透射电子显微镜研究了晶体结构；电子带结构由电子全息图确定；光学特性是通过高空间和时间分辨率的阴极发光来测量的。研究中还包括探索组成均匀性，相位分离和压电场的影响。微观结构特性与光电特性相关，以了解生长参数在整体设备性能中的作用。

项目成果

期刊论文数量（6）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

High quality wurtzite BAlN with high B content by metalorganic chemical vapor deposition

金属有机化学气相沉积法制备高B含量的优质纤锌矿BAlN

DOI：
发表时间：
2015
期刊：
57th Electronic Materials Conference
影响因子：
0
作者：
Li, Xiao-Hang;Wang, Shuo;Ponce, Fernando A;Detechprohm, Theeradetch;Ougazzaden, Abdallah;Dupuis, Russell D.
通讯作者：
Dupuis, Russell D.

MOVPE grown periodic AlN/BAlN heterostructure with high boron content

MOVPE 生长的高硼含量周期性 AlN/BAlN 异质结构

DOI：
10.1016/j.jcrysgro.2014.09.030
发表时间：
2015
期刊：
Journal of Crystal Growth
影响因子：
1.8
作者：
Li, X.;Sundaram, S.;El Gmili, Y.;Genty, F.;Bouchoule, S.;Patriache, G.;Disseix, P.;Réveret, F.;Leymarie, J.;Salvestrini, J.-P.
通讯作者：
Salvestrini, J.-P.

Crystal structure and composition of BAlN thin films: Effect of boron concentration in the gas flow

BAlN 薄膜的晶体结构和成分：气流中硼浓度的影响

DOI：
10.1016/j.jcrysgro.2017.07.013
发表时间：
2017
期刊：
Journal of Crystal Growth
影响因子：
1.8
作者：
Wang, Shuo;Li, Xiaohang;Fischer, Alec M.;Detchprohm, Theeradetch;Dupuis, Russell D.;Ponce, Fernando A.
通讯作者：
Ponce, Fernando A.

Growth of single-phase wurtzite BAlN with 7.2%-B contents

生长%20of%20单相%20纤锌矿%20BAlN%20含%207.2%-B%20含量

DOI：
发表时间：
2016
期刊：
CLEO 2016
影响因子：
0
作者：
Li, Xiaohang;Wang, Shuo;Liu, Hanxiao;Ponce, Fernando;Detchprohm, Theeradetch;Dupuis, Russell
通讯作者：
Dupuis, Russell