Development of High Efficiency Deep Ultraviolet Light Emitting Diodes

高效深紫外发光二极管的研制

• 批准号: 1408364
• 负责人: Theodore Moustakas
• 金额: $ 33.69万
• 依托单位: Trustees of Boston University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2014
• 资助国家: 美国
• 起止时间: 2014-08-01 至 2017-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1408364&HistoricalAwards=false
• 关键词: Development; Efficiency; Deep; Ultraviolet; Light

Title: Development of High Efficiency Deep Ultraviolet Light Emitting DiodesThe objective of this research is to develop high efficiency (20-30%) deep ultraviolet light emitting diodes. The proposed research has the potential for a strong impact on the environmental and medical sectors, due to specific applications to water / air / food sterilization and for diagnostic and therapeutic uses. Furthermore, the proposed research activities will promote education through the training of students in a variety of disciplines, ranging from growth of semiconductor thin films, device fabrication and characterization, and emerging technologies. To increase the effectiveness and scope of the program, the involvement of undergraduates and high-school interns will be emphasized by taking advantage of several existing channels at Boston University, many of which have a strong focus on the recruitment of underrepresented minorities. The NSF support of this project is justified since it is basic science and the technology it addresses has a large number of societal and educational benefits. The specific goal is to demonstrate high efficiency (20-30%) deep UV LEDs based on AlGaN alloys grown on p-SiC substrates. This efficiency value is 3 times higher than the best result currently reported in the literature. In order to accomplish this goal long standing problems of low internal quantum efficiency (IQE), low injection efficiency (IE), and low extraction efficiency (EE) will be addressed. The AlGaN structures will be grown on p-SiC substrates, to which they are better lattice matched than the commonly used sapphire substrates. Improvements in IQE will be obtained by growing the active region of the device under a growth mode, which leads to band structure potential fluctuations and thus efficient radiative recombination. The expected IQE value will be 70% or higher. The LED device will be an inverted structure on a degenerately doped p-SiC substrate, which together with polarization assisted injection of holes is expected to lead to IE 50% or higher. A conducting AlGaN-based p-type DBR will be incorporated between the substrate and the active region to prevent absorption in the p-SiC substrate. Furthermore, the inverted structure will allow light extraction from the transparent n-AlGaN side of the device, which can textured for maximum light extraction leading to EE of 70% or higher.

标题：高效率深紫外发光二极管的开发本研究的目的是开发高效率（20-30%）深紫外发光二极管。由于水/空气/食品灭菌以及诊断和治疗用途的具体应用，拟议的研究有可能对环境和医疗部门产生重大影响。此外，拟议的研究活动将通过对半导体薄膜生长、器件制造和表征以及新兴技术等各个学科的学生进行培训来促进教育。为了提高该计划的有效性和范围，将通过利用波士顿大学的几个现有渠道来强调本科生和高中实习生的参与，其中许多渠道都非常注重招募代表性不足的少数族裔。美国国家科学基金会对该项目的支持是合理的，因为它是基础科学，而且它所涉及的技术具有大量的社会和教育效益。具体目标是展示基于 p-SiC 基板上生长的 AlGaN 合金的高效率 (20-30%) 深紫外 LED。这一效率值比目前文献报道的最佳结果高出3倍。为了实现这一目标，将解决长期存在的低内量子效率（IQE）、低注入效率（IE）和低提取效率（EE）问题。 AlGaN 结构将在 p-SiC 衬底上生长，与常用的蓝宝石衬底相比，它们与 p-SiC 衬底具有更好的晶格匹配。通过在生长模式下生长器件的有源区，将获得IQE的改进，这导致能带结构电势波动，从而实现有效的辐射复合。预期 IQE 值为 70% 或更高。 LED器件将是简并掺杂p-SiC衬底上的倒置结构，与偏振辅助空穴注入一起预计可实现50%或更高的IE。导电的 AlGaN 基 p 型 DBR 将合并在衬底和有源区之间，以防止 p-SiC 衬底中的吸收。此外，倒置结构将允许从器件的透明 n-AlGaN 侧提取光，该侧可以进行纹理化以实现最大光提取，从而使 EE 达到 70% 或更高。