Development of High Efficiency Deep Ultraviolet Light Emitting Diodes

高效深紫外发光二极管的研制

• 批准号: 1408364
• 负责人: Theodore Moustakas
• 金额: $ 33.69万
• 依托单位: Trustees of Boston University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2014
• 资助国家: 美国
• 起止时间: 2014-08-01 至 2017-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1408364&HistoricalAwards=false
• 关键词: Development; Efficiency; Deep; Ultraviolet; Light

Title: Development of High Efficiency Deep Ultraviolet Light Emitting DiodesThe objective of this research is to develop high efficiency (20-30%) deep ultraviolet light emitting diodes. The proposed research has the potential for a strong impact on the environmental and medical sectors, due to specific applications to water / air / food sterilization and for diagnostic and therapeutic uses. Furthermore, the proposed research activities will promote education through the training of students in a variety of disciplines, ranging from growth of semiconductor thin films, device fabrication and characterization, and emerging technologies. To increase the effectiveness and scope of the program, the involvement of undergraduates and high-school interns will be emphasized by taking advantage of several existing channels at Boston University, many of which have a strong focus on the recruitment of underrepresented minorities. The NSF support of this project is justified since it is basic science and the technology it addresses has a large number of societal and educational benefits. The specific goal is to demonstrate high efficiency (20-30%) deep UV LEDs based on AlGaN alloys grown on p-SiC substrates. This efficiency value is 3 times higher than the best result currently reported in the literature. In order to accomplish this goal long standing problems of low internal quantum efficiency (IQE), low injection efficiency (IE), and low extraction efficiency (EE) will be addressed. The AlGaN structures will be grown on p-SiC substrates, to which they are better lattice matched than the commonly used sapphire substrates. Improvements in IQE will be obtained by growing the active region of the device under a growth mode, which leads to band structure potential fluctuations and thus efficient radiative recombination. The expected IQE value will be 70% or higher. The LED device will be an inverted structure on a degenerately doped p-SiC substrate, which together with polarization assisted injection of holes is expected to lead to IE 50% or higher. A conducting AlGaN-based p-type DBR will be incorporated between the substrate and the active region to prevent absorption in the p-SiC substrate. Furthermore, the inverted structure will allow light extraction from the transparent n-AlGaN side of the device, which can textured for maximum light extraction leading to EE of 70% or higher.

标题：这项研究的高效率深紫外线的发展是为了发展高效率（20-30％）深紫外发光二极管。拟议的研究可能会对环境和医疗部门产生强烈影响，这是由于对水 /空气 /食物灭菌以及用于诊断和治疗用途的特定应用。此外，拟议的研究活动将通过培训各种学科的学生来促进教育，从半导体薄膜的增长，设备制造和表征以及新兴技术。为了提高该计划的有效性和范围，将通过利用波士顿大学的几个现有渠道来强调本科生和高中实习生的参与，其中许多渠道非常着重于招募代表性不足的少数群体。 NSF对该项目的支持是合理的，因为它是基础科学，并且它解决的技术具有大量的社会和教育利益。具体的目标是根据P-SIC底物生长的Algan合金证明高效率（20-30％）深紫外线LED。该效率值是文献当前报告的最佳结果的3倍。为了实现这一目标，将解决较低的内部量子效率（IQE），低注射效率（IE）和低提取效率（EE）的长期存在问题。 Algan结构将在P-SIC底物上生长，与常用的蓝宝石底物相比，它们匹配的晶格更好。通过在生长模式下种植设备的活性区域，将获得智商的改进，从而导致带结构的潜在波动，从而有效地辐射重组。预期的IQE值将为70％或更高。 LED设备将是一个倒置的P-SIC底物上的倒置结构，再加上辅助注射孔的孔，预计将导致IE 50％或更高。基于底物和活性区域之间将掺入基于Algan的P型DBR，以防止P-SIC底物吸收。此外，倒置的结构将允许从设备的透明N-α侧提取光，该侧面可以纹理以最大的光提取，导致EE达到70％或更高。