EAGER: Silicon-compatible, Crystallographic Oriented Epitaxial Germanium for New Generation of Metal-oxide Semiconductor Field-effect Transistors

EAGER：用于新一代金属氧化物半导体场效应晶体管的硅兼容、晶体取向外延锗

• 批准号: 1348653
• 负责人: Mantu Hudait
• 金额: $ 28万
• 依托单位: Virginia Polytechnic Institute and State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2013
• 资助国家: 美国
• 起止时间: 2013-10-01 至 2015-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1348653&HistoricalAwards=false
• 关键词: EAGER; Silicon; compatible; Crystallographic; Oriented

Objectives: The objectives of this research program is design, materials synthesis and device based co-exploration of lattice-engineered, crystallographic oriented epitaxial (100), (110) and (111) germanium (Ge) based transistors using large bandgap barrier materials. The approach is a) experimental investigation of p-channel (110)Ge and n-channel (111)Ge quantum well transistors, b) experimental investigation of high hole mobility using (110)Ge and high electron mobility using (111)Ge surface orientation, and c) silicon compatible process flow of biaxially strained Ge transistors. Intellectual merit: The key scientific merits of this proposal are: i) in-situ growth of Ge transistor structure; ii) tailor-made surface orientations of Ge enable to achieve both high-hole and high-electron mobilities; iii) biaxially strained Ge quantum well transistor using large bandgap materials to enhance hole mobility, iv) larger valence band-offsets for carrier confinement and prevents carrier spill-off, v) elimination of parallel conduction, and vi) enhancement mode transistor operation. Our approaches are most innovative and transformative of in-situ grown epitaxial surface oriented Ge with large bandgap buffers that has a capacity to bring new technologies.Broader Impact: The proposed Ge research seeks to increase the speed of transistor and substantially reduce power consumption in integrated circuits. Ultra-low power and high-speed computation will benefit applications for industrial, medical, commercial and personal use. The proposed research is interdisciplinary in nature. Through collaboration with industry, we envision direct transfer of device prototypes, to open new avenues for commercialization. The project will train graduate and undergraduate students in the area of nano-scale material science, device physics, and semiconductor fabrication

目标：本研究项目的目标是使用大带隙势垒材料对基于晶格工程、晶体学取向的外延 (100)、(110) 和 (111) 锗 (Ge) 晶体管进行设计、材料合成和基于器件的共同探索。该方法是 a) p 沟道 (110)Ge 和 n 沟道 (111)Ge 量子阱晶体管的实验研究，b) 使用 (110)Ge 的高空穴迁移率和使用 (111)Ge 表面的高电子迁移率的实验研究取向，以及c)双轴应变Ge晶体管的硅兼容工艺流程。 智力价值：该提案的主要科学价值是：i）Ge晶体管结构的原位生长； ii) 定制的Ge表面取向能够实现高空穴和高电子迁移率； iii) 使用大带隙材料增强空穴迁移率的双轴应变 Ge 量子阱晶体管，iv) 更大的价带偏移用于载流子限制并防止载流子溢出，v) 消除并联传导，以及 vi) 增强模式晶体管操作。我们的方法最具创新性和变革性，是具有大带隙缓冲器的原位生长外延表面取向Ge，能够带来新技术。更广泛的影响：拟议的Ge研究旨在提高晶体管的速度并大幅降低集成的功耗电路。超低功耗和高速计算将有利于工业、医疗、商业和个人用途的应用。拟议的研究本质上是跨学科的。通过与业界的合作，我们设想直接转移设备原型，为商业化开辟新的途径。该项目将培训纳米材料科学、器件物理和半导体制造领域的研究生和本科生