GOALI: Experimental and Theoretical Investigation of Thermal Transport in Three-Dimensional Integrated Circuits (3D ICs)

GOALI：三维集成电路 (3D IC) 中热传输的实验和理论研究

• 批准号: 1236370
• 负责人: Ankur Jain
• 金额: $ 20.06万
• 依托单位: University of Texas at Arlington
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2012
• 资助国家: 美国
• 起止时间: 2012-09-15 至 2016-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1236370&HistoricalAwards=false
• 关键词: GOALI; Experimental; Theoretical; Investigation; Thermal

CBET-1236370PI: Jain, AnkurThe vertical stacking of multiple Silicon substrates containing microelectronic circuits, often referred to as a three-dimensional integrated circuit (3D IC) promises to provide substantial performance improvement while also exacerbating the thermal management challenge. 3D IC technology introduces several new materials and interfaces whose thermal and thermomechanical performance remains poorly known. The objective of this research is to investigate and measure fundamental thermal transport and thermomechanical properties of materials and interfaces in 3D IC technology. Time-domain Joule heating methods will be used to characterize thermal transport through die-to-die interfaces in 3D ICs. Thermomechanical properties of such interfaces will be measured. This research will improve the understanding of thermal transport in 3D ICs. Experimental data obtained in this work will help validate several analytical and simulations-based models that have recently been developed. The long-term goal of this research will be to develop a complete understanding of the interaction between thermal transport and electrical design of 3D ICs and other advanced microelectronic systems. It is expected that by addressing thermal management concerns in 3D ICs, the proposed work will enable 3D ICs with improved electrical performance. This work will contribute to a More-than-Moore approach for design of next-generation microelectronics wherein cost-effective performance improvement is achieved not just by dimensional scaling, but also by vertical integration. The work will be tightly-integrated with industry partners which will facilitate technology transfer of key thermal management principles in 3D ICs to the industry. While the industry will benefit from the fundamental, enabling nature of the work, graduate students will also benefit from mentorship by leading industry technologists and internships. Undergraduate students will be included in this research through senior capstone projects and through REUs during the summer. Research findings from the project will be incorporated into graduate-level and upper-level undergraduate courses being taught at the University of Texas at Arlington.

CBET-1236370PI：Jain，Ankurth垂直堆叠的多个硅基底物，其中包含微电路，通常称为三维集成电路（3D IC），有望提供实质性的性能改进，同时加剧热管理挑战。 3D IC技术引入了几种新材料和界面，其热力学性能仍然鲜为人知。这项研究的目的是研究和测量3D IC技术中材料和界面的基本热传输和热机械性能。时间域焦耳加热方法将用于表征通过3D IC中的模具到DIE接口的热传输。将测量此类接口的热机械性能。这项研究将提高对3D IC中热运输的理解。在这项工作中获得的实验数据将有助于验证最近开发的几种基于分析和模拟的模型。这项研究的长期目标将是对3D IC和其他先进的微电体系统的热传输与电气设计之间的相互作用进行完整的了解。可以预期，通过解决3D IC中的热管理问题，拟议的工作将使3D ICs具有改善的电性能。这项工作将有助于一种超过摩尔的方法，用于设计下一代微电子，其中不仅通过维度缩放，而且还通过垂直集成来实现成本效益的性能改善。这项工作将与行业合作伙伴紧密融合，这将促进3D IC中关键的热管理原则的技术转移。尽管该行业将从基本的，使工作的基本性质受益，但研究生也将受益于领先的行业技术人员和实习。本科生将通过高级顶峰项目和夏季通过REUS纳入本研究。该项目的研究结果将纳入德克萨斯大学阿灵顿分校教授的研究生级和高级本科课程。