SBIR Phase I: Electric Field Driven Magnetoresistive Random Access Memory Based on Synthetic Multiferroics

SBIR 第一阶段：基于合成多铁性的电场驱动磁阻随机存取存储器

• 批准号: 1214227
• 负责人: Alexander Khitun
• 金额: $ 14.1万
• 依托单位: Andromeda Scientific LLC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2012
• 资助国家: 美国
• 起止时间: 2012-07-01 至 2012-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1214227&HistoricalAwards=false
• 关键词: SBIR; Phase; Electric; Field; Driven

This Small Business Innovation Research (SBIR) Phase I project aims to develop a novel type of Magnetoresistive Random Access Memory based on synthetic multiferroics. Magnetic memory commercially used today exploits an electric current for magnetization switching. The bulk of the consumed energy is wasted due to the relatively low switching efficiency. This project investigates the feasibility of using synthetic multiferroics comprising piezoelectric and magnetostrictive materials for magnetization switching. The key advantage of using multiferroics is the ability to control magnetization state by an electric field. The utilization of electric field instead of electric current makes it possible to significantly reduce the energy per switch. There is an urgent need in low-power consuming memory devices, which would be of great benefit for a variety of practical applications including wireless devices such as cellular phones as well as other devices biased by the portative energy sources. It is the goal of this Phase I project to provide the feasibility study of the electric-field driven magnetic memory.The broader impact/commercial potential of this project includes fundamental advances in portative electronic devices and systems enabling lower power consumption and providing longer operation before battery recharging. The development of fast and low power consuming multiferroic memory has the potential to eventually replace the existing memory elements in a market. If successful, this project will lead to a revolutionary change in the data storage technology by providing fast, scalable and non-volatile memory devices. It is fair to say that the development of low-power consuming memory is of great benefit for society offering better performance for a variety of electronic devices and the overall reduction of electricity consumption.

这项小型企业创新研究（SBIR）I阶段项目旨在基于合成的多膜素质开发一种新型的磁性随机访问记忆。今天使用的磁性存储器可利用电流进行磁化开关。由于开关效率相对较低，因此消耗能量的大部分被浪费了。该项目调查了使用包含压电和磁刻录材料的合成多精神材料进行磁化开关的可行性。使用多表色的关键优势是能够通过电场控制磁化状态。电场而不是电流的利用使得有可能大大减少每次开关的能量。低功率消耗存储设备的迫切需要，这对于各种实用应用程序会带来很大的好处，包括无线设备，例如蜂窝电话以及其他受陈述能源偏见的设备。该阶段项目的目的是提供对电场驱动磁性内存的可行性研究。该项目的更广泛的影响/商业潜力包括在设备电子设备和系统方面的基本进步，从而实现较低的功耗并在电池充电之前提供更长的操作。快速和低功率消耗多效性内存的发展有可能最终取代市场中现有的内存元素。如果成功，该项目将通过提供快速，可扩展和非挥发性内存设备来导致数据存储技术的革命性变化。可以公平地说，低功率消耗记忆的发展对于为各种电子设备提供更好性能的社会和电力消耗的总体降低而言，这是很大的好处。