EAGER: Pulsed Laser Assisted Exfoliation of Single Crystalline SiC Thin Layers for Cost Effective Micro-Device Fabrication

EAGER：脉冲激光辅助单晶 SiC 薄层剥离，实现具有成本效益的微器件制造

• 批准号: 1144637
• 负责人: Tugrul Ozel
• 金额: $ 13.01万
• 依托单位: Rutgers University New Brunswick
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2011
• 资助国家: 美国
• 起止时间: 2011-09-01 至 2012-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1144637&HistoricalAwards=false
• 关键词: EAGER; Pulsed; Laser; Assisted; Exfoliation

This EArly-concept Grant for Exploratory Research (EAGER) grant provides funding for testing the feasibility of pulsed laser processing that would enable high rate and cost effective exfoliation of thin single crystalline silicon carbide (SiC) layers suitable for fabrication of micro-devices. The attractiveness of single crystalline SiC in a variety of device applications is counteracted by the very high cost of substrates. The main goal of this project is to exfoliate multiple thin layers from one standard thickness SiC wafer using hydrogen ion implantation and laser processing, and transferring such layers to silicon or polycrystalline SiC substrates in order to enable a broader use of this material. Hydrogen ion implantation into SiC can form a zone of voids and microcracks at a depth approximating the implantation range, and lead to exfoliation at subsequent very high temperatures. The proposed approach of laser-assisted exfoliation would utilize a lower implantation dose and lower annealing temperatures, thus reducing damage and allowing bonding of SiC to temperature-sensitive substrates. Interactions between ion implantation conditions, laser irradiation, and heating will be explored to gain preliminary understanding of the path leading to exfoliation of continuous single crystalline layers suitable for electronic devices. Feasibility studies of the proposed process will be conducted and structural and electrical properties of processed samples will be investigated. This research will concentrate on a 4H polytype of SiC, as it is of most relevance for power and high voltage applications, but laser-assisted exfoliation should also be extendable to other semiconductors and wide bandgap materials, such as gallium nitride (GaN). If successful, the results of this exploratory research will lead to development of a rapid and cost-effective method of exfoliating single crystalline layers of SiC and bonding them to lower cost substrates that are compatible with high performance electronic, photonic, sensor, or MEMS device operation.

这项早期概念探索性研究资助 (EAGER) 资助为测试脉冲激光加工的可行性提供了资金，脉冲激光加工将能够实现适合制造微型设备的薄单晶碳化硅 (SiC) 层的高速率和成本效益的剥离。单晶碳化硅在各种器件应用中的吸引力被极高的衬底成本所抵消。该项目的主要目标是使用氢离子注入和激光加工从一个标准厚度的 SiC 晶圆上剥离多个薄层，并将这些层转移到硅或多晶 SiC 基板上，以便更广泛地使用这种材料。氢离子注入 SiC 可以在接近注入范围的深度形成空隙和微裂纹区域，并导致在随后的非常高的温度下剥落。所提出的激光辅助剥离方法将利用较低的注入剂量和较低的退火温度，从而减少损伤并允许将 SiC 粘合到温度敏感基板上。将探索离子注入条件、激光照射和加热之间的相互作用，以初步了解适用于电子器件的连续单晶层剥离的路径。将进行拟议工艺的可行性研究，并对加工样品的结构和电气性能进行研究。这项研究将集中在 4H 多型碳化硅上，因为它与电力和高压应用最相关，但激光辅助剥离也应该扩展到其他半导体和宽带隙材料，例如氮化镓 (GaN)。如果成功，这项探索性研究的结果将导致开发一种快速且经济高效的方法，剥离 SiC 单晶层并将其粘合到与高性能电子、光子、传感器或 MEMS 设备兼容的低成本基板上手术。