SBIR Phase I: Low Cost Manufacturing of Novel Vanadium Nitride based Asymmetric Supercapacitors

SBIR 第一阶段：新型氮化钒基不对称超级电容器的低成本制造

• 批准号: 1142998
• 负责人: Saemin Choi
• 金额: $ 14.99万
• 依托单位: Inmatech, Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2012
• 资助国家: 美国
• 起止时间: 2012-01-01 至 2012-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1142998&HistoricalAwards=false
• 关键词: SBIR; Phase; Low; Cost; Manufacturing

This Small Business Innovation Research (SBIR) Phase I project aims to develop low-cost manufacturing processes of Vanadium Nitride (VN) based asymmetric supercapacitors. The approach is to combine the synthesis of nanostructured VN with its deposition on a current collector substrate. The combined synthesis and deposition process reduces manufacturing costs and capital equipment expenses. The direct deposition of thin layers of active material on the current collector minimizes the impedance and maximizes peak power capabilities. The plan is to investigate laser sintering of thin layers of vanadium oxides and laser assisted nitridation, assess technical performance of the resulting thin VN electrodes in an asymmetric supercapacitor, and identify design factors critical to performance enhancement and optimization. The broader/commercial impact of this project will be the potential to provide a low-cost deposition method that will revolutionize the manufacturing of asymmetric, high energy density supercapacitors for automotive and smart grid applications. This technology is expected to reduce the cost of supercapacitors by 30% and improve the asymmetric cell energy density by 25%.

这项小型企业创新研究（SBIR）I阶段项目旨在开发基于硝化钒（VN）的低成本制造过程，不对称的超级电容器。 该方法是将纳米结构VN的合成与当前集合子底物的沉积相结合。合成和沉积过程降低了制造成本和资本设备费用。电流收集器上的薄层活性材料的直接沉积可最大程度地减少阻抗并最大化峰值功率。该计划是为了研究氧化钒氧化物的薄层和激光辅助硝化的激光烧结，评估不对称超级电容器中所得薄VN电极的技术性能，并鉴定出对性能增强和优化至关重要的设计因素。 该项目的更广泛/商业影响将是提供低成本沉积方法的潜力，该方法将彻底改变为汽车和智能电网应用的不对称，高能密度超级电容器的制造。预计该技术将使超级电容器的成本降低30％，并将不对称的细胞能量密度提高25％。