Design and Modeling Framework for Managing Variability in Silicon Interposers for 3D Integration

用于管理 3D 集成硅中介层可变性的设计和建模框架

• 批准号: 1129918
• 负责人: Madhavan Swaminathan
• 金额: $ 37.39万
• 依托单位: Georgia Tech Research Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2011
• 资助国家: 美国
• 起止时间: 2011-09-01 至 2015-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1129918&HistoricalAwards=false
• 关键词: Design; Modeling; Framework; Managing; Variability

The research objective of this award is to develop a design framework that enables the modeling of multi-physics variability in 2.5D and 3D integrated micro-systems with a focus on silicon vias (TSVs), by accounting for both local and global variations across the system. Using this framework, methods will be developed for localized parametric optimization across the thermal-electrical-mechanical multi-physics domains for minimizing variability and maximizing performance. The difficulty in modeling these multi-physics interactions between the three domains is complicated due to the multi-scale dimensions of the structures involved and manufacturing variations. In addition, use of technologies such as micro-fluidics for cooling such systems further complicates the domains that need to be modeled. The deliverables include the development of a modeling framework for simultaneous analysis of the thermal, electrical and mechanical equations across a 2.5D/3D sub-system or system containing TSVs, and a means to enable the capture of the interaction between the domains and parameterization in critical areas for the cross domain optimization of the thermal, electrical and mechanical behavior. If successful, this research will lead to a design and modeling framework that could address the problems being faced by the semiconductor industry for the design of 3D integrated systems. The results of this research will be disseminated to the design community and also used to develop curriculum material for 3D system integration to benefit both undergraduate and graduate students. High school students and teachers will also be educated through this award by creating awareness amongst them on the issues and challenges being faced by the semiconductor and electronics industry for miniaturizing electronic systems.

该奖项的研究目标是开发一个设计框架，通过考虑整个系统的局部和全局变化，能够对 2.5D 和 3D 集成微系统中的多物理场变化进行建模，重点关注硅通孔 (TSV)。系统。使用该框架，将开发跨热-电-机械多物理域的局部参数优化方法，以最小化可变性并最大化性能。由于所涉及结构的多尺度尺寸和制造变化，对三个域之间的多物理场相互作用进行建模的难度非常复杂。此外，使用微流体等技术来冷却此类系统使需要建模的领域进一步复杂化。可交付成果包括开发一个建模框架，用于同时分析 2.5D/3D 子系统或包含 TSV 的系统中的热、电和机械方程，以及一种能够捕获域之间的相互作用和参数化的方法。热、电和机械行为跨域优化的关键领域。如果成功，这项研究将产生一个设计和建模框架，可以解决半导体行业在 3D 集成系统设计中面临的问题。这项研究的结果将传播给设计界，并用于开发 3D 系统集成的课程材料，以使本科生和研究生受益。高中生和教师也将通过该奖项获得教育，提高他们对半导体和电子行业小型化电子系统所面临的问题和挑战的认识。