GOALI/Collaborative Research: Understanding Cracking and Defect Formation During AlN Crystal Growth

GOALI/合作研究：了解 AlN 晶体生长过程中的裂纹和缺陷形成

• 批准号: 0928257
• 负责人: Matthew Miller
• 金额: $ 30.03万
• 依托单位: Cornell University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-09-01 至 2012-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0928257&HistoricalAwards=false
• 关键词: GOALI; Collaborative; Research; Understanding; Cracking

CMMI - 0928257 - GOALI/Collaborative Research: Understanding Cracking and Defect Formation During AlN Crystal Growth This proposal will be awarded using funds made available by the American Recovery and Reinvestment Act of 2009 (Public Law 111-5), and meets the requirements established in Section 2 of the White House Memorandum entitled, Ensuring Responsible Spending of Recovery Act Funds, dated March 20, 2009. I also affirm, as the cognizant Program Officer, that the proposal does not support projects described in Section 1604 of Division A of the Recovery Act. The objectives of this research are to i) gain an understanding of and ii) create a predictive methodology for crack initiation and overall crystal quality evolution for Aluminum Nitride (AlN) single crystals during processing. AlN has outstanding electrical and thermal properties making it particularly well-suited for high power, high frequency, energy efficient electronic and photonic devices, such as light emitting diodes (LEDs) and laser diodes, but the use of AlN is currently limited by the high production cost. Crystal IS, the industrial partner on this proposal, has developed a new technology for growing large AlN crystals - up to 50 mm in diameter. However, these large crystals often crack due to stresses that arise when the material is cooled from its growth temperature as high as 2300C. In this project, a team of experts in the fields of stress measurement and simulation of loaded materials from Cornell and Rensselaer will study AlN as a "structural" material. High energy X-rays will be used to see the crystal structure of the AlN deep inside a test specimen as it is loaded. By matching simulations to the experimental results, key temperature-dependent mechanical properties, related to strength, stiffness and fracture resistance will be determined. This information will be used in a crystal growth process model to predict crystal quality for given growth conditions.This work will guide crystal growth process designers so that large, high quality crystals can be produced. This work will be integrated into educational programs at the participating institutions. The industrial collaboration will provide excellent learning opportunities. Any experimental capabilities developed will reside at the x-ray beamline and become available to other users.

CMMI -0928257-目标/协作研究：了解Aln Crystal增长期间的破解和缺陷形成本提案将使用2009年《美国恢复和再投资法》提供的资金（公共法111-5）授予，并符合在白宫备忘录的第2条题为“确保负责的恢复法”资金的负责人，日期为2009年3月20日。我也确认，作为认知计划官员，该提案不支持该恢复A司第1604条所述的项目行为。这项研究的目的是i）了解并ii）在加工过程中为氮化铝（ALN）单晶的裂纹启动和总体晶体质量演化创建了一种预测方法。 ALN具有出色的电气和热性能，使其特别适合高功率，高频，能源有效的电子和光子设备，例如发光二极管（LED）和激光二极管，但ALN的使用目前受到高的限制生产成本。这项提案的工业合作伙伴Crystal IS开发了一种新技术，用于生长大型ALN晶体 - 直径高达50毫米。但是，这些大晶体通常是由于材料从其生长温度高达2300℃冷却时会产生的应力而破裂。在这个项目中，由康奈尔（Cornell）和伦斯勒（Rensselaer）的压力测量和模拟材料模拟领域的专家团队将以“结构”材料学习。高能量X射线将用于查看ALN的晶体结构，并在测试样品被加载时深处。通过将模拟与实验结果匹配，将确定与强度，刚度和断裂抗性有关的关键温度依赖性机械性能。该信息将在晶体生长过程模型中使用，以预测给定生长条件的晶体质量。这项工作将指导晶体生长过程设计师，以便可以产生大型，高质量的晶体。这项工作将纳入参与机构的教育计划。工业合作将提供极好的学习机会。开发的任何实验功能都将驻留在X射线梁线上，并可以供其他用户使用。