InGaN Quantum Dot Devices

InGaN 量子点器件

• 批准号: 0901477
• 负责人: Pei-Cheng Ku
• 金额: $ 29.8万
• 依托单位: Regents of the University of Michigan - Ann Arbor
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-06-01 至 2013-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0901477&HistoricalAwards=false
• 关键词: InGaN; Quantum; Dot; Devices

The objectives of this research are to epitaxially grow high quality InGaN ordered quantum dot (QD) arrays, to independently control the QD density, size, shape, and height, and to realize high efficiency InGaN QD light emitters and quantum optical devices. Intellectual Merit: InGaN QD devices can provide superior properties for short-wavelength optoelectronics, high power and high speed electronics, spintronics, nanophotonics, and quantum optics. Current issues of InGaN QD devices include nonuniformity, weak quantum confinement, and poor material qualities. The proposed work explores a new approach to fabricating high quality InGaN QD devices by avoiding the strain-induced 2D-3D transition in the Stranski-Krastanov growth and various issues associated with it. Through the integration of high quality InGaN QDs in light emitters and quantum-optical structures, the proposed work will provide a fundamental understanding of InGaN QD devices, elucidating the true potential of these devices without being masked by the poor quality of QDs. Broader Impacts: The broader impacts of this program include (1) the creation of a multidisciplinary (materials science, device physics, semiconductor processing, and optical science) scientific learning environment for students at a variety of levels (from K12 to graduate) and from several underrepresented groups; (2) the development of a new undergraduate course in Solid-State Lighting and Photovoltaics, and a new graduate course in Nanophotonics; (3) outreach projects in collaborations with (OE)^2 Office at the University of Michigan to develop teaching modules for local K12 schools. These teaching modules will then be disseminated to a broader audience via internet.

本研究的目标是外延生长高质量的InGaN有序量子点（QD）阵列，独立控制QD密度、尺寸、形状和高度，实现高效InGaN QD光发射器和量子光学器件。智力优势：InGaN QD 器件可为短波长光电子学、高功率和高速电子学、自旋电子学、纳米光子学和量子光学提供卓越的性能。 InGaN QD 器件当前的问题包括不均匀性、量子限制弱和材料质量差。拟议的工作探索了一种制造高质量 InGaN QD 器件的新方法，避免了 Stranski-Krastanov 生长中应变诱导的 2D-3D 转变以及与之相关的各种问题。 通过将高质量 InGaN QD 集成到光发射器和量子光学结构中，拟议的工作将提供对 InGaN QD 器件的基本了解，阐明这些器件的真正潜力，而不会被劣质 QD 所掩盖。更广泛的影响：该计划的更广泛影响包括（1）为各个级别（从 K12 到研究生）和从一些代表性不足的群体； （2）开发新的本科课程“固态照明与光伏”和新的研究生课程“纳米光子学”； (3) 与密歇根大学 (OE)^2 办公室合作的外展项目，为当地 K12 学校开发教学模块。 这些教学模块随后将通过互联网传播给更广泛的受众。